Granted Patent B2

US 7,573,072 · App. 10/797,784 · Granted Aug 11, 2009

Abstract

Claims (44)

1. A lighting apparatus for emitting white light comprising:

a semiconductor light source emitting radiation having a peak emission in the UV; and

a phosphor composition radiationally coupled to the light source, the phosphor composition comprising (Ba,Sr,Ca)SiO 4 :Eu, one or more garnet phosphors having the general formula (Y,Gd,La,Lu,Tb,Pr,Sm) 3 (Al,Ga,In) 5 O 12 :Ce, and at least one phosphor selected from the group consisting of (Sr,Mg,Ca,Ba,Zn) 2 P 2 O 7 :Eu,Mn; (Ca,Sr,Ba,Mg) 5 (PO 4 ) 3 (Cl,F,OH):Eu,Mn; and (Sr,Mg,Ca,)MgAl 10 O 17 :Eu,Mn, wherein said (Ba,Sr,Ca)SiO 4 :Eu phosphor comprises (Sr 0.95 Ba 0.025 Eu 0.025 ) 2 SiO 4 or (Sr 0.58 Ca 0.036 Eu 0.06 ) 2 SiO 4 .

2. The lighting apparatus of claim 1 , wherein the light source is an LED.

3. The lighting apparatus of claim 2 , wherein the LED comprises a nitride compound semiconductor represented by the formula In i Ga j Al k N, where 0≦i; 0≦j, 0≦k, and i+j+k=1.

4. The lighting apparatus of claim 1 , wherein the light source is an organic emissive structure.

5. The lighting apparatus of claim 1 , wherein the phosphor composition is coated on the surface of the light source.

6. The lighting apparatus of claim 1 , further comprising an encapsulant surrounding the light source and the phosphor composition.

7. The lighting apparatus of claim 1 , wherein the phosphor composition is dispersed in the encapsulant.

8. The lighting apparatus of claim 1 , further comprising a reflector cup.

9. The lighting apparatus of claim 1 , wherein said apparatus has a color point with ccx value of 0.5286 and a ccy value of 0.4604.

10. The lighting apparatus of claim 1 , wherein said phosphor composition further comprises one or more additional phosphor.

11. The lighting apparatus of claim 10 , wherein said one or more additional phosphors are selected from the group consisting of (Ba,Sr,Ca) 5 (PO 4 ) 3 (Cl,F,Br,OH):Eu 2+ ,Mn 2+ ,Sb 3+ ; (Ba,Sr,Ca)MgAl 10 O 17 :Eu 2+ ,Mn 2+ ; (Ba,Sr,Ca)BPO 5 :Eu 2+ ,Mn 2+ ; (Sr,Ca) 10 (PO 4 ) 6 *nB 2 O 3 :Eu 2+ ; 2SrO*0.84P 2 O 5 *0.16B 2 O 3 :Eu 2+ ; Sr 2 Si 3 O 8*2 SrCl 2 :Eu 2+ ; Ba 3 MgSi 2 O 8 :Eu 2+ ; Sr 4 Al 14 O 25 :Eu 2+ ; BaAl 8 O 13 :Eu 2+ ; (Ba,Sr,Ca)Al 2 O 4 :Eu 2+ ; (Y,Gd,Lu,Sc,La)BO 3 :Ce 3+ ,Tb 3+ ; (Ba,Sr,Ca) 2 (Mg,Zn)Si 2 O 7 :Eu 2+ ; (Sr,Ca,Ba)(Al,Ga,In) 2 S 4 :Eu 2+ ; (Y,Gd,Tb,La,Sm,Pr, Lu)3(Al,Ga) 5 O 12 :Ce 3+ ; (Ca,Sr) 8 (Mg,Zn)(SiO 4 ) 4 Cl 2 :Eu 2+ ,Mn 2+ ; Na 2 Gd 2 B 2 O 7 :Ce 3+ ,Tb 3+ ; (Ba,Sr) 2 (Ca,Mg,Zn)B 2 O 6 :K,Ce,Tb; (Sr,Ca,Ba,Mg,Zn) 2 P 2 O 7 :Eu 2+ ,Mn 2+ ; (Ca,Sr,Ba,Mg) 10 (PO 4 ) 6 (F,Cl,Br,OH):Eu 2+ ,Mn 2+ ; (Gd,Y,Lu,La) 2 O 3 :Eu 3+ ,Bi 3+ ; (Gd,Y,Lu,La) 2 O 2 S:Eu 3+ ,Bi 3+ ; (Gd,Y,Lu,La)VO 4 :Eu 3+ ,Bi 3+ ; (Ca,Sr)S:Eu 2+ ; SrY 2 S 4 :Eu 2+ ; CaLa 2 S 4 :Ce 3+ ; (Ca,Sr)S:Eu 2+ ; 3.5MgO*0.5MgF 2 *GeO 2 :Mn 4+ ; (Ba,Sr,Ca)MgP 2 O 7 :Eu 2+ ,Mn 2+ ; (Y,Lu) 2 WO 6 :Eu 3 +,Mo 6+ ; and (Ba,Sr,Ca) x Si y N z :Eu 2+ .

12. A lighting apparatus for emitting white light comprising:

a UV light source emitting radiation having a peak emission in the UV range; and

a phosphor composition radiationally coupled to the light source, the phosphor composition comprising (Sr,Ba,Ca) 2 SiO 4 :Eu, one or more garnet phosphors having the general formula (Y,Gd,La,Lu,Tb,Pr,Sm) 3 (Al,Ga,In) 5 O 12 :Ce and a magnesium fluorogermanate phosphor, wherein said (Sr,Br,Ca) 2 SiO 4 :Eu phosphor comprises (Sr 0.95 Ba 0.025 Eu 0.025 ) 2 SiO 4 or (Sr 0.58 Ca 0.036 Eu 0.06 ) 2 SiO 4 .

13. The lighting apparatus of claim 12 , wherein the light source is a semiconductor LED.

14. The lighting apparatus of claim 12 , wherein the LED comprises a nitride compound semiconductor represented by the formula In i Ga j Al k N, where 0≦i; 0≦j, 0≦k, and i+j+k=1.

15. The lighting apparatus of claim 12 , wherein said light source is an organic emissive structure.

16. The lighting apparatus of claim 12 , wherein the phosphor composition is coated on the surface of the light source.

17. The lighting apparatus of claim 12 , further comprising an encapsulant surrounding the light source and the phosphor composition.

18. The lighting apparatus of claim 12 , wherein the phosphor composition is dispersed in the encapsulant.

19. The lighting apparatus of claim 12 , further comprising a reflector cup.

20. The lighting apparatus of claim 12 , wherein said apparatus has a color point with ccx value of 0.5286 and a ccy value of 0.4604.

21. The lighting apparatus of claim 12 , wherein said phosphor composition further comprises one or more additional phosphors.

22. The lighting apparatus of claim 21 , wherein said one or more additional phosphors are selected from the group consisting of (Ba,Sr,Ca) 5 (PO 4 ) 3 (Cl,F,Br,OH):Eu 2+ ,Mn 2+ ,Sb 3+ ; (Ba,Sr,Ca)MgAl 10 O 17 :Eu 2+ ,Mn 2+ ; (Ba,Sr,Ca)BPO 5 :Eu 2+ ,Mn 2+ ; (Sr,Ca) 10 (PO 4 ) 6 *nB 2 O 3 :Eu 2+ ; 2SrO*0.84P 2 O 5 *0.16B 2 O 3 :Eu 2+ ; Sr 2 Si 3 O 8*2 SrCl 2 :Eu 2+ ; Ba 3 MgSi 2 O 8 :Eu 2+ ; Sr 4 Al 14 O 25 :Eu 2+ ; BaAl 8 O 13 :Eu 2+ ; (Ba,Sr,Ca)Al 2 O 4 :Eu 2+ ; (Y,Gd,Lu,Sc,La)BO 3 :Ce 3+ ,Tb 3+ ; (Ba,Sr,Ca) 2 (Mg,Zn)Si 2 O 7 :Eu 2+ ; (Sr,Ca,Ba)(Al,Ga,In) 2 S 4 :Eu 2+ ; (Y,Gd,Tb,La,Sm,Pr, Lu) 3(Al,Ga) 5 O 12 :Ce 3+ ; (Ca,Sr) 8 (Mg,Zn)(SiO 4 ) 4 Cl 2 :Eu 2+ ,Mn 2+ ; Na 2 Gd 2 B 2 O 7 :Ce 3+ ,Tb 3+ ; (Ba,Sr) 2 (Ca,Mg,Zn)B 2 O 6 :K,Ce,Tb; (Sr,Ca,Ba,Mg,Zn) 2 P 2 O 7 :Eu 2+ ,Mn 2+ ; (Ca,Sr,Ba,Mg) 10 (PO 4 ) 6 (F,Cl,Br,OH):Eu 2+ ,Mn 2+ ; (Gd,Y,Lu,La) 2 O 3 :Eu 3+ ,Bi 3+ ; (Gd,Y,Lu,La) 2 O 2 S:Eu 3+ ,Bi 3+ ; (Gd,Y,Lu,La)VO 4 :Eu 3+ ,Bi 3+ ; (Ca,Sr)S:Eu 2+ ; SrY 2 S 4 :Eu 2+ ; CaLa 2 S 4 :Ce 3+ ; (Ca,Sr)S:Eu 2+ ; 3.5MgO*0.5MgF 2 *GeO 2 :Mn 4+ ; (Ba,Sr,Ca)MgP 2 O 7 :Eu 2+ ,Mn 2+ ; (Y,Lu) 2 WO 6 :Eu 3 +,Mo 6+ ; (Ba,Sr,Ca) x Si y N z :Eu 2+ .

23. A lighting apparatus for emitting white light comprising:

a semiconductor light source emitting radiation having a peak emission in the UV range; and

a phosphor composition radiationally coupled to the light source, the phosphor composition comprising (Ba,Sr,Ca)SiO 4 :Eu, and one or more additional phosphors, wherein said (Ba,Sr,Ca)SiO 4 :Eu phosphor comprises (Sr 0.95 Ba 0.025 Eu 0.025 ) 2 SiO 4 or (Sr 0.58 Ca 0.036 Eu 0.06 ) 2 SiO 4 .

24. The lighting apparatus of claim 23 , wherein the light source is a semiconductor LED.

25. The lighting apparatus of claim 23 , wherein the LED comprises a nitride compound semiconductor represented by the formula In i Ga j Al k N, where 0≦i; 0≦j, 0≦k, and i+j+k=1.

26. The lighting apparatus of claim 23 , wherein said light source is an organic emissive structure.

27. The lighting apparatus of claim 23 , wherein the phosphor composition is coated on the surface of the light source.

28. The lighting apparatus of claim 23 , further comprising an encapsulant surrounding the light source and the phosphor composition.

29. The lighting apparatus of claim 23 , wherein the phosphor composition is dispersed in the encapsulant.

30. The lighting apparatus of claim 23 , further comprising a reflector cup.

31. The lighting apparatus of claim 23 , wherein said apparatus has a color point with a ccx value or 0.52 86 and a ccy value of 0.4604.

32. The lighting apparatus of claim 28 , wherein said one or more additional phosphors are selected from the group consisting of (Ba,Sr,Ca) 5 (PO 4 ) 3 (Cl,F,Br,OH):Eu 2+ ,Mn 2+ ,Sb 3+ ; (Ba,Sr,Ca)MgAl 10 O 17 :Eu 2+ ,Mn 2+ ; (Ba,Sr,Ca)BPO 5 :Eu 2+ ,Mn 2+ ; (Sr,Ca) 10 (PO 4 ) 6 *nB 2 O 3 :Eu 2+ ; 2SrO*0.84P 2 O 5 *0.16B 2 O 3 :Eu 2+ ; Sr 2 Si 3 O 8*2 SrCl 2 :Eu 2+ ; Ba 3 MgSi 2 O 8 :Eu 2+ ; Sr 4 Al 14 O 25 :Eu 2+ ; BaAl 8 O 13 :Eu 2+ ; (Ba,Sr,Ca)Al 2 O 4 :Eu 2+ ; (Y,Gd,Lu,Sc,La)BO 3 :Ce 3+ ,Tb 3+ ; (Ba,Sr,Ca) 2 (Mg,Zn)Si 2 O 7 :Eu 2+ ; (Sr,Ca,Ba)(Al,Ga,In) 2 S 4 :Eu 2+ ; (Y,Gd,Tb,La,Sm,Pr, Lu)3(Al,Ga) 5 O 12 :Ce 3+ ; (Ca,Sr) 8 (Mg,Zn)(SiO 4 ) 4 Cl 2 :Eu 2+ ,Mn 2+ ; Na 2 Gd 2 B 2 O 7 :Ce 3+ ,Tb 3+ ; (Ba,Sr) 2 (Ca,Mg,Zn)B 2 O 6 :K,Ce,Th; (Sr,Ca,Ba,Mg,Zn) 2 P 2 O 7 :Eu 2+ ,Mn 2+ ; (Ca,Sr,Ba,Mg) 10 (PO 4 ) 6 (F,Cl,Br,OH):Eu 2+ ,Mn 2+ ; (Gd,Y,Lu,La) 2 O 3 :Eu 3+ ,Bi 3+ ; (Gd,Y,Lu,La) 2 O 2 S:Eu 3+ ,Bi 3+ ; (Gd,Y,Lu,La)VO 4 :Eu 3+ ,Bi 3+ ; (Ca,Sr)S:Eu 2+ ; SrY 2 S 4 :Eu 2+ ; CaLa 2 S 4 :Ce 3+ ; (Ca,Sr)S:Eu 2+ ; 3.5MgO*0.5MgF 2 *GeO 2 :Mn 4+ ; (Ba,Sr,Ca)MgP 2 O 7 :Eu 2+ ,Mn 2+ ; (Y,Lu) 2 WO 6 :Eu 3 +,Mo 6+ ; (Ba,Sr,Ca) x Si y N z :Eu 2+ .

33. A phosphor blend including (Sr,Ba,Ca) 2 SiO 4 :Eu and at least one of (Sr,Mg,Ca,Ba,Zn) 2 P 2 O 7 :Eu,Mn; (Ca,Sr,Ba,Mg) 5 (PO 4 ) 3 (Cl,F,OH):Eu,Mn; and (Sr,Ba,Ca)MgAl 10 O 17 :Eu,Mn, wherein said (Sr,Ba,Ca) 2 SiO 4 :Eu phosphor comprises (Sr 0.95 Ba 0.025 Eu 0.025 ) 2 SiO 4 or (Sr 0.58 Ca 0.036 Eu 0.06 ) 2 SiO 4 .

34. The phosphor blend of claim 33 , wherein said phosphor blend is capable of absorbing the radiation emitted by a light source having a peak emission in the UV range and emitting radiation that, when combined with said radiation from said light source, produces white light.

35. The lighting apparatus of claim 1 , wherein said semiconductor light source has a peak emission at about 405 nm.

36. A lighting apparatus for emitting white light comprising:

a semiconductor light source emitting radiation having a peak emission in the UV; and

a phosphor composition radiationally coupled to the light source, the phosphor composition comprising (Sr,Ba,Ca) 2 SiO 4 :Eu, and at least one phosphor selected from the group consisting of ((Sr,Mg,Ca,Ba,Zn) 2 P 2 O 7 :Eu,Mn; (Ca,Sr,Ba,Mg) 5 (PO 4 ) 3 (Cl,F,OH):Eu,Mn; and (Sr,Ba,Ca)MgAl 10 O 17 :Eu,Mn, wherein said (Sr,Br,Ca) 2 SiO 4 :Eu phosphor comprises (Sr 0.95 Ba 0.025 Eu 0.025 ) 2 SiO 4 or (Sr 0.58 Ca 0.036 Eu 0.06 ) 2 SiO 4 .

Assignments (7)