Memory mapped monitoring circuitry for optoelectronic device
View Patent ↗Circuitry for monitoring operation of an optoelectronic device having a laser transmitter and a photodiode receiver includes analog to digital conversion circuitry for receiving a plurality of analog signals from the laser transmitter and photodiode receiver, converting the received analog signals into digital values, and storing the digital values in predefined memory-mapped locations within the optoelectronic device. Comparison logic compares one or more of these digital values with limit values, generates flag values based on the comparisons, and stores the flag values in predefined locations within the optoelectronic device. An interface enables a host device to read from and write to host-specified memory mapped locations within the optoelectronic device.
1. Circuitry for monitoring an optoelectronic device, comprising:
memory, including one or more memory arrays for storing information related to the optoelectronic device;
analog to digital conversion circuitry configured to receive a plurality of analog signals from the optoelectronic device, the analog signals corresponding to operating conditions of the optoelectronic device, convert the received analog signals into digital values, and store the digital values in predefined locations within the memory;
comparison logic configured to compare the digital values with limit values to generate flag values, wherein the flag values are stored in predefined flag storage locations within the memory during operation of the optoelectronic device; and
an interface configured to enable a host to read directly from and write directly to locations within the memory, including the predefined flag storage locations, in accordance with commands received from the host.
2. The circuitry of claim 1 , wherein the analog to digital conversion circuitry is configured to convert a power level signal into a digital power level value and to store the digital power level value in a predefined power level location within the memory.
3. The circuitry of claim 2 , wherein the comparison logic includes logic for comparing the digital power level value with a power limit value, generating a power flag value based on the comparison of the digital power signal with the power limit value, and storing the power flag value in a predefined power flag location within the memory.
4. The circuitry of claim 1 , wherein the analog to digital conversion circuitry is configured to convert a temperature signal into a digital temperature value and to store the digital temperature value in a predefined temperature location within the memory.
5. The circuitry of claim 4 , wherein the comparison logic includes logic for comparing the digital temperature value with a temperature limit value, generating a temperature flag value based on the comparison of the digital temperature signal with the temperature limit value, and storing the temperature flag value in a predefined temperature flag location within the memory.
6. The circuitry of claim 1 , wherein the plurality of analog signals includes two analog signals selected from the set consisting of laser bias current, laser output power, and received power.
7. The circuitry of claim 1 , wherein the analog to digital conversion circuitry is configured to receive a voltage signal from a source external to the monitoring circuitry, convert the voltage signal into a digital voltage value and store the digital voltage value in a respective predefined location within the memory.
8. Circuitry for monitoring an optoelectronic device, comprising:
memory, including one or more memory arrays for storing information related to the optoelectronic device;
analog to digital conversion circuitry configured to receive a plurality of analog signals from the optoelectronic device, the analog signals corresponding to operating conditions of the optoelectronic device, convert the received analog signals into digital values, and store the digital values in predefined locations within the memory;
comparison logic configured to compare the digital values with limit values to generate flag values, wherein the flag values are stored in predefined flag storage locations within the memory during operation of the optoelectronic device; and
an interface configured to enable a host to read directly from and write directly to locations within the memory, including the predefined flag storage locations, in accordance with commands received from the host;
wherein the plurality of analog signals include laser bias current, laser output power, and received power.
9. A method of monitoring an optoelectronic device, comprising:
receiving a plurality of analog signals from the optoelectronic device, the analog signals corresponding to operating conditions of the optoelectronic device, converting the received analog signals into digital values, and storing the digital values in predefined locations within a memory;
comparing the digital values with limit values to generate flag values, and storing the flag values in predefined flag locations within the memory; and
in accordance with instructions received from a host device, enabling the host device to read directly from and write directly to locations within the memory, including the predefined flag locations.
10. The method of claim 9 , further including:
generating a power level signal corresponding to a power supply voltage level of the optoelectronic device, converting the power level signal into a digital power level value and storing the digital power level value in a predefined power level location within the memory.
11. The method of claim 10 , further including:
comparing the digital power level value with a power level limit value, generating a power level flag value based on the comparison of the digital power level signal with the power level limit value, and storing the power level flag value in a predefined power level flag location within the memory.
12. The method of claim 9 , further including
generating a temperature signal corresponding to a temperature of the optoelectronic device, converting the temperature signal into a digital temperature value and storing the digital temperature value in a predefined temperature location within the memory.
13. The method of claim 12 , wherein
comparing the digital temperature value with a temperature limit value, generating a temperature flag value based on the comparison of the digital temperature signal with the temperature limit value, and storing the temperature flag value in a predefined temperature flag location within the memory.
14. The method of claim 9 , wherein the plurality of analog signals includes two analog signals selected from the set consisting of laser bias current, laser output power, and received power.
15. The method of claim 9 , including receiving a voltage signal from a source external to the optoelectronic device, converting the voltage signal into a digital voltage value and storing the digital voltage value in a respective predefined location within the memory.
16. A method of monitoring an optoelectronic device, comprising:
receiving a plurality of analog signals from the optoelectronic device, the analog signals corresponding to operating conditions of the optoelectronic device, converting the received analog signals into digital values, and storing the digital values in predefined locations within a memory;
comparing the digital values with limit values to generate flag values, and storing the flag values in predefined flag locations within the memory; and
in accordance with instructions received from a host device, enabling the host device to read directly from and write directly to locations within the memory, including the predefined flag locations;
wherein the plurality of analog signals includes laser bias current, laser output power, and received power.