High-frequency semiconductor device
View Patent ↗There is provided a high-frequency GaAs power FET element with high performance, capable of suppressing an abnormal oscillation. Thin film resistors are provided so as to be connected electrically between incoming distributed constant lines connected electrically to FET chips, and thin film resistors are provided so as to be connected electrically between outgoing distributed constant lines electrically connected to FET chips. An unnecessary roundabout power is consumed by the thin film transistors in the incoming distributed constant lines and the outgoing distributed constant lines.
1. A high-frequency semiconductor device; comprising:
first and second amplifier;
a dielectric substrate provided on an input side or an output side of the first and second amplifiers;
a first transmission line formed on a surface of dielectric substrate and connected electrically to the first amplifier, the first transmission line having an electrical length of substantially λ/4 with respect to an operation frequency;
a second transmission line formed on a surface of the dielectric substrate and connected electrically to the second amplifier, the second transmission line having an electrical length substantially λ/4 with respect to an operation frequency;
a third transmission line formed on a surface of dielectric substrate between the first and second transmission lines, the third transmission line having an electrical length of substantially λ/4 with respect to an operation frequency;
a first thin film resistor connected electrically between the first and third transmission lines and disposed in a passing direction of an electrical power so as to form a distributed constant; and
a second thin film resistor connected electrically between the second and third transmission lines and disposed in a passing direction of an electrical power so as to form a distributed constant.
2. A high-frequency semiconductor device, comprising:
first and second amplifiers;
a dielectric substrate provided on an input side or an output side of the first and second amplifiers;
first and second transmission lines formed on a surface of the dielectric substrate and connected electrically to the first amplifier, the first and second transmission lines having an electrical length of substantially λ/4 with respect to an operation frequency;
third and fourth transmission lines formed on a surface of the dielectric substrate and connected electrically to the second amplifier, the third an fourth transmission lines having an electrical length of substantially λ/4 with respect to an operation frequency;
a first thin film resistor connected between the first and second transmission lines and disposed in a passing direction of an electrical power so as to form a distributed constant;
a second thin film resistor corrected between the second and third transmission lines and disposed in a passing direction of an electrical power so as to form a distributed constant; and
a third thin film resistor connected between the third and fourth transmission lines and disposed in a passing direction of an electrical power so as to distributed constant.
3. A high-frequency semiconductor device, comprising:
first and second amplifiers;
a dielectric substrate provided on an input side or an output side of the first and second amplifiers;
first and second transmission lines formed on a surface of the dielectric substrate and connected electrically to the first amplifier, the first and second transmission lines having an electrical length of substantially λ/4 with respect to an operation frequency;
third and fourth transmission lines formed on a surface of the dielectric substrate and connected electrically to the second amplifier, the third an fourth transmission lines having an electrical length of substantially λ/4 with respect to an operation frequency;
a fifth transmission line formed between the second and third transmission lines, the fifth transmission line having a electrical length of substantially λ/4 with respect to an operation frequency;
a first thin film resistor connected between the first and second transmission lines and disposed in a passing direction of an electrical power so as to form a distributed constant;
a second thin film resistor connected between the third and fourth transmission lines and disposed in a passing direction of an electrical power so as to farm a distributed constant; and
a third thin film resistor connected between the second and third transmission lines and disposed in a passing direction of an electrical power so as to distributed constant; and
a fourth thin film resistor connected between the fifth and third transmission lines and disposed in a passing direction of an electrical power so as to form a distributed constant.
4. A high-frequency semiconductor device, comprising:
first and second amplifiers;
a dielectric substrate provided on an input side or an output side of the first and second amplifiers;
first and second transmission lines formed on a surface of the dielectric substrate and connected electrically to the first amplifier, the first and second transmission lines having an electrical length of substantially λ/4 with respect to an operation frequency;
third and fourth transmission lines formed on a surface of the dielectric substrate and connected electrically to the second amplifier, the third and forth transmission lines having an electrical length of substantially λ/4 with respect to an operation frequency;
a first thin film resistor connected between the first and second transmission lines and disposed in a passing direction of an electrical power so as to form a distributed constant;
a second thin film resistor connected between the third and fourth transmission lines and disposed in a passing direction of an electrical power so as to form a distributed constant; and
a third thin film resistor connected to an end of the second transmission line opposed to the third transmission line;
a fourth thin film resistor connected to an end of the third transmission line opposed to the second transmission line; and
a unit for connecting the third and fourth thin resistors electrically.
5. A high-frequency semiconductor device, comprising:
first and second amplifiers;
a dielectric substrate provided on an output side or an input side of the first and second amplifiers;
first and second transmission lines formed on a surface of the dielectric substrate and connected electrically to the first amplifier, the first and second transmission lines having an electrical length of substantially λ/4 with respect to an operation frequency;
third and fourth transmission lines formed on a surface of the dielectric substrate and connected electrically to the second amplifier, the third an fourth transmission lines having an electrical length of substantially λ/4 with respect to an operation frequency;
a first thin film resistor connected between the first and second transmission lines and disposed in a passing direction of an electrical power so as to form a distributed constant;
a second thin film resistor connected between the third and fourth transmission lines and disposed in a passing direction of an electrical power so as to form a distributed constant;
a first input terminal or output terminal on a power combining circuit connected electrically to a side of the first and second transmission lines opposite to a side thereof connected to the first amplifier;
a second input terminal or output terminal on the power combining circuit connected electrically to a side of the third and fourth transmission lines opposite to a side thereof connected to the second amplifier; and
a third thin film resistor connected between the first input terminal and the second input terminal or between the first output terminal and the second output terminal.
6. A high-frequency semiconductor device, comprising:
first and second amplifiers;
a dielectric substrate provided on an output side or an input side of the first and second amplifiers;
first and second transmission lines formed on a surface of the dielectric substrate and connected electrically to the first amplifier, the first and second transmission lines having an electrical length of substantially λ/4 with respect to an operation frequency;
third and fourth transmission lines formed on a surface of the dielectric substrate and connected electrically to the second amplifier, the third an fourth transmission lines having an electrical length of substantially λ/4 with respect to an operation frequency;
a first thin film resistor connected between the first and second transmission lines and disposed in a passing direction of an electrical power so as to form a distributed constant;
a second thin film resistor connected between the third and fourth transmission lines and disposed in a passing direction of an electrical power so as to form a distributed constant;
a fifth transmission line formed between the second and third transmission lines, the fifth transmission line having an electrical length of substantially λ/4 with respect to an operation frequency;
a third thin film resistor connected between the second and fifth transmission lines and disposed in a passing direction of an electrical power so as a form a distributed constant;
a fourth thin film resistor connected between the fifth and third transmission lines and disposed in a passing direction of an electrical power so as form a distributed constant;
a first input terminal or output terminal on a power combining circuit connected electrically to a side of the first and second transmission lines opposite to a side thereof connected to the first amplifier; and
a second input terminal or output terminal on the power combining circuit connected electrically to a side of the third and fourth transmission lines opposite to a side thereof connected to the second amplifier.