IP Library › Granted Patent US 6,974,751
Granted Patent B2
US 6,974,751 · App. 10/805,992 · Granted Dec 13, 2005

Semiconductor device and method for producing the same

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Quick Facts
Patent No.
US 6,974,751
App. No.
10/805,992
Granted
Dec 13, 2005
Kind
B2
Abstract

A semiconductor device includes a SiC substrate and an ohmic electrode, a semiconductor member including a SiC member and a SiGe member being formed between the SiC substrate and the ohmic electrode, wherein the semiconductor member is composed of a SiGe member formed on a SiC member, and the ohmic electrode is formed on the SiGe member, whereby the ohmic electrode with a low resistance can be formed on the SiC substrate without conducting a heat treatment at a high temeprature.

Claims (8)

1. A method for producing a semiconductor device, comprising:

forming a semiconductor member including a SiC member and a SiGe member on a SiC substrate by crystal growth; and forming an ohmic electrode on the SiGe member, and

forming a gate electrode on the SiC member.

2. A method for producing a semiconductor device according to claim 1 , wherein the process of forming the semiconductor member by crystal growth includes forming a SiGe member on SiC member by crystal growth.

3. A method for producing a semiconductor device according to claim 1 , wherein the process of forming the semiconductor member by crystal growth includes forming a Si member on a SiC member by crystal growth; and forming a SiGe member on the Si member by crystal growth.

4. A method for producing a semiconductor device according to claim 1 , wherein the process of forming the semiconductor member by crystal growth includes forming a semiconductor member, in which a mole fraction is varied continuously from SIC to Si and from Si to SiGe, on a SiC member by crystal growth.

5. A method far producing a semiconductor device according to claim 1 , wherein the process of forming the semiconductor member by crystal growth includes forming a semiconductor member, in which a C mole fraction is decreased wile a Ge mole fraction is increased continuously from SiC to SiGe, on a SiC member by crystal growth.

6. A method for producing a semiconductor device according to claim 1 , wherein the semiconductor member is fanned on both a p-type region and an n-type region by crystal growth