Semiconductor device

1. A semiconductor device comprising:

a semiconductor substrate having a Periphery and a center;

at least one layer of a first insulating film formed above the semiconductor substrate and having a relative dielectric constant of 3.8 or less, an entire layer of the first insulating film being separated at least near four corners of the semiconductor substrate by a lacking portion that extends alone the four corners;

a second insulating film covering a side face of the entire layer of the first insulating film in the lacking portion on a side of the center of the semiconductor substrate and having a relative dielectric constant of over 3.8; and

a conductor film layered on the second insulating film in the lacking portion.

2. A semiconductor device as set forth in claim 1 , wherein the lacking portion in the first insulating film is formed near an entire peripheral edge of the semiconductor substrate.

3. A semiconductor device as set forth in claim 1 , wherein the second insulating film covers a side face of the entire layer of the first insulating film in the lacking portion also on a side of the periphery of the semiconductor substrate.

4. A semiconductor device as set forth in claim 1 , further comprising a third insulating film layered on the conductor film and having a relative dielectric constant of over 3.8.

5. A semiconductor device comprising:

a semiconductor substrate having a periphery and a center;

at least one layer of a first insulating film formed above the semiconductor substrate and having a relative dielectric constant of 3.8 or less, an entire layer of the first insulating film being separated at least near four corners of the semiconductor substrate by a lacking portion that extends along the four corners;

a second insulating film covering a top face of the first insulating film and a side face of the entire layer of the first insulating film in the lacking portion on a side of the center of the semiconductor substrate and having a relative dielectric constant of over 3.8; and

a conductor pattern passing through the second insulating film on the top face of the first insulating film.

6. A semiconductor device as set forth in claim 5 , further comprising a second conductor pattern buried in the first insulating film.

7. A semiconductor device as set forth in claim 5 , wherein the conductor pattern contains copper.

8. A semiconductor device as set forth in claim 1 , wherein the first insulating film is constituted of a plurality of layers.

9. A semiconductor device as set forth in claim 1 , wherein the lacking portion in the first insulating film has a width of 0.5 μm or more.

10. A semiconductor device as set forth in claim 1 , wherein the first insulating film between the lacking portion and the periphery of the semiconductor substrate has a width of 0.5 μm or more.

11. A semiconductor device as set forth in claim 1 , wherein a side of the lacking portion in the first insulating film has a length of 1 mm or more.

12. A semiconductor device comprising:

a semiconductor substrate;

at least one layer of a first insulating film formed above the semiconductor substrate and having a relative dielectric constant of 3.8 or less, an entire layer of the first insulating film being separated at least near four corners of a semiconductor chip by a lacking portion that extends along the four corners;

a second insulating film formed in the lacking portion and on the first insulating film and having a relative dielectric constant of over 3.8; and

a conductor film layered on the second insulating film in the lacking portion.

13. A semiconductor device as set forth in claim 12 , wherein the lacking portion in the first insulating film is formed near an entire peripheral edge of the semiconductor chip.

14. A semiconductor device as set forth in claim 12 , further comprising a third insulating film layered on the conductor film and having a relative dielectric constant of over 3.8.

15. A semiconductor device as set forth in claim 12 , wherein the first insulating film is constituted of a plurality of layers.

16. A semiconductor device as set forth in claim 12 , wherein the lacking portion in the first insulating film has a width of 0.5 μm or more.

17. A semiconductor device as set forth in claim 12 , wherein the first insulating film between the lacking portion and a peripheral edge of the semiconductor chip has a width of 0.5 μm or more from the lacking portion.

18. A semiconductor device as set forth in claim 12 , wherein a side of the lacking portion in the first insulating film has a length of 1 mm or more.

19. A semiconductor device as set forth in claim 5 , wherein the lacking portion in the first insulating film is formed near an entire peripheral edge of the semiconductor substrate.

20. A semiconductor device as set forth in claim 5 , wherein the second insulating film covers a side face of the entire layer of the first insulating film in the lacking portion on a side of the periphery of the semiconductor substrate.

21. A semiconductor device as set forth in claim 5 , further comprising a conductor film layered on the second insulating film in the lacking portion.

22. A semiconductor device as set forth in claim 5 , wherein the first insulating film comprises a plurality of layers.

23. A semiconductor device as set forth in claim 5 , wherein the lacking portion in the first insulating film has a width of 0.5 μm or more.

24. A semiconductor device as set forth in claim 5 , wherein the first insulating film between the lacking portion and the periphery of the semiconductor substrate has a width of 0.5 μm or more.

25. A semiconductor device as set forth in claim 5 , wherein a side of the lacking portion in the first insulating film has a length of 1 mm or more.