Semiconductor device
View Patent ↗Input/output cells are formed so as to be peripherally arranged adjacent to a corner cell on a surface of a semiconductor chip, and electrode pads are formed on the respective input/output cells. The electrode pads are configured in a zigzag pad arrangement so as to form inner and outer pad arrays. However, of the electrode pads forming the inner pad array, those electrode pads in predetermined areas adjacent to the two sides of the corner cell are not disposed, such that an interconnect pattern of a carrier which is bump-bonded to the semiconductor chip and vias are prevented from becoming complex.
1. A semiconductor device formed by flip-chip bonding a semiconductor chip to a carrier used for external connection with the semiconductor chip, wherein:
the semiconductor chip includes:
a plurality of input/output cells including circuit elements formed so as to be peripherally arranged on a surface of the semiconductor chip, and
a plurality of electrode pads formed on associated ones of the input/output cells;
the electrode pads are configured in a zigzag pad arrangement so as to form inner and outer pad arrays; and
a predetermined area near a corner on the semiconductor chip surface is designated as a pad-disposition restriction area, within which disposing and usage of one or ones of the electrode pads that are bump-bonded to an interconnect pattern formed on a surface of the carrier are restricted,
wherein in the pad-disposition restriction area, the inner pad array is individually bump-bonded to the interconnect pattern on the carrier surface, and at least two of the electrode pads are short-circuited to each other inside the carrier.
2. The device of claim 1 , wherein the electrode pads that are short-circuited to each other inside the carrier are connected via the carrier to a power supply or to ground.
3. The device of claim 1 , wherein of the input/output cells, those corresponding to the electrode pads that are short-circuited to each other inside the carrier function as a single high-drive-current capability cell.
4. The device of claim 1 , wherein of the input/output cells, those corresponding to the electrode pads that are short-circuited to each other inside the carrier function as a single low-impedance cell.
5. The semiconductor device of claim 1 , wherein each of the electrode pads has a tenon-like conformation in plan view, and includes a narrow probing portion and a wide bonding portion which is bump-bonded to a interconnect pattern on the carrier.
6. A semiconductor device formed by flip-chip bonding a semiconductor chip to a carrier used for external connection with the semiconductor chip, wherein:
the semiconductor chip includes:
a plurality of I/O cells each including a circuit element and an electrode pad formed on the circuit element, the plurality of I/O cells including first and second I/O groups each including at least two I/O cells, wherein
the first I/O group includes at least two first I/O cells each having an inner electrode pad as the electrode pad and at least two second I/O cells each having an outer electrode pad as the electrode pad, and a plurality of electrode pads of the at least two first and second I/O cells included in the first I/O group are configured in a zigzag pad arrangement so as to form inner and outer pad arrays, and
the second I/O group is formed in a region between a corner region of the semiconductor chip and the first I/O group, and includes at least two third I/O cells each having an outer electrode pad as the electrode pad and at least two fourth I/O cells each having an inner electrode pad as the electrode pad, and a plurality of electrode pads of the at least two third and fourth I/O cells included in the second I/O group are configured in a zigzag pad arrangement so as to form inner and outer pad arrays,
wherein the carrier includes an interconnect pattern electrically connected to at least two of the at least two inner electrode pads of the at least two fourth I/O cells.
7. The semiconductor device of claim 6 , wherein each of a plurality of electrode pads of the plurality of I/O cells has a tenon-like conformation in plan view, and includes a narrow probing portion and a wide bonding portion which is bump-bonded to a interconnect pattern on the carrier.
8. The semiconductor device of claim 6 , wherein the semiconductor chip further includes a corner cell formed in the corner region of the semiconductor chip and the second I/O group is formed to be adjacent to the corner cell.
9. A semiconductor device formed by flip-chip bonding a semiconductor chip to a carrier used for external connection with the semiconductor chip, wherein:
the semiconductor chip includes:
a first plurality of I/O cells formed along a first side of the semiconductor chip and each including a circuit element and an electrode pad formed on the circuit element, the first plurality of I/O cells including first and second I/O groups each including at least two I/O cells, wherein
the first I/O group includes at least two first I/O cells each having an inner electrode pad as the electrode pad and at least two second I/O cells each having an outer electrode pad as the electrode pad, and a plurality of electrode pads of the at least two first and second I/O cells included in the first I/O group are configured in a zigzag pad arrangement so as to form inner and outer pad arrays, and
the second I/O group is formed in a region between a corner region of the semiconductor chip and the first I/O group, and includes at least two third I/O cells each having an outer electrode pad as the electrode pad and at least two fourth I/O cells each having an inner electrode pad as the electrode pad, and a plurality of electrode pads of the at least two third and fourth I/O cells included in the second I/O group are configured in a zigzag pad arrangement so as to form inner and outer pad arrays; and
a second plurality of I/O cells formed along a second side of the semiconductor chip, the first and second sides of the semiconductor chip both sharing with the corner region of the semiconductor chip and each of the second plurality of I/O cells including a circuit element and an electrode pad formed on the circuit element, the second plurality of I/O cells including third and fourth I/O groups each including at least two I/O cells, wherein
the third I/O group includes at least two fifth I/O cells each having an inner electrode pad as the electrode pad and at least two sixth I/O cells each having an outer electrode pad as the electrode pad, and a plurality of electrode pads of the at least two fifth and sixth I/O cells included in the third I/O group are configured in a zigzag pad arrangement so as to form inner and outer pad arrays, and
the fourth I/O group is formed in a region between the corner region of the semiconductor chip and the third I/O group, and includes at least two seventh I/O cells each having an outer electrode pad as the electrode pad and at least two eighth I/O cells each having an inner electrode pad as the electrode pad, and a plurality of electrode pads of the at least two seventh and eighth I/O cells included in the fourth I/O group are configured in a zigzag pad arrangement so as to form inner and outer pad arrays,
wherein the carrier includes an interconnect pattern electrically connected to both an inner electrode pad of the at least two inner electrode pads of the at least two fourth I/O cells and an inner electrode pad of the at least two inner electrode pads of the at least two eighth I/O cells.
10. The semiconductor device of claim 9 , wherein each of a plurality of electrode pads of the first plurality of I/O cells and the second plurality of I/O cells has a tenon-like conformation in plan view, and includes a narrow probing portion and a wide bonding portion which is bump-bonded to a interconnect pattern on the carrier.
11. The semiconductor device of claim 9 , wherein the semiconductor chip further includes a corner cell formed in the corner region of the semiconductor chip and each of the second and fourth I/O groups is formed to be adjacent to the corner cell.