Semi-integrated designs for external cavity tunable lasers
View Patent ↗Semi-integrated external cavity diode laser (ECDL) designs including integrated structures comprising a gain section, phase control section, and optional modulator section. Each integrated structure includes a waveguide that passes through each of the sections. A mirror is defined in the structure to define one end of a laser cavity. A reflective element is disposed generally opposite a rear facet of the gain section, forming an external cavity therebetween. A tunable filter is disposed in the external cavity to effectuate tuning of the laser. During operation, a modulated drive signal is provided to the phase control section. This modulates an optical path length of the laser cavity, which produces an intensity (amplitude) modulation in the laser output. A detector is employed to produce a feedback signal indicative of the intensity modulation that is used for tuning the laser in accordance with a wavelength locking servo loop. Upon passing through the modulator section, an optical signal is modulated with data.
1. An apparatus, comprising;
an integrated structure having front and rear facets optically connected via a waveguide passing therethrough, the integrated structure further including;
a gain section to emit a plurality of photons in response to a first input, having a facet defining the rear facet of the integrated structure;
a phase control section disposed adjacent to the gain section, to modulate an optical path length of a portion of the waveguide passing through the phase control section in response to a second electrical input;
a modulator section disposed adjacent to the phase control section, to modulate an optical output passing through a portion of the waveguide passing through the modulator section in response to a third electrical input, and having a facet defining the front facet of the integrated structure; and
a partially-reflective mirror disposed between the phase control section and the modulator section, the partially-reflective mirror having a reflectivity of approximately 2-10 percent.
2. The apparatus of claim 1 , wherein the waveguide is tilted relative to the front and rear facets of the integrated structure.
3. The apparatus of claim 1 , wherein the partially-reflective mirror is oriented substantially perpendicular to a local portion of the waveguide proximate to the mirror.
4. The apparatus of claim 1 , wherein the partially-reflective mirror is effectuated by an air gap defined between the phase control section and the modulator section.
5. The apparatus of claim 4 , wherein the air gap is etched along a plane that is parallel to a crystalline plane structure of the integrated structure and wherein the waveguide is bent such that it is substantially perpendicular proximate to the air gap and angled relative to the front and rear facets of the integrated structure.
6. The apparatus of claim 4 , wherein the air gap is etched along a plane that is angled relative to a crystalline plane structure of the integrated structure.
7. The apparatus of claim 4 , wherein the partially-reflective mirror comprises a chirped Bragg grating formed along a portion of the wave guide between the gain section and the modulator section.
8. The apparatus of claim 1 , wherein bandgaps of portions of the waveguide passing through the phase control and modulator sections are broadened approximately 0.06-0.12 eV (electron-volts) relative to a bandgap of the portion of the waveguide passing through the gain section.
9. The apparatus of claim 1 , wherein portions of the waveguide passing through the phase control and modulator sections comprise an offset quantum-well structure or a Quantum-well intermixed structure.
10. The apparatus of claim 1 , wherein a portion of the waveguide is configured as asymmetric twin waveguides, wherein the optical functions of amplification and phase control are integrated in separate, vertically coupled waveguides.
11. The apparatus of claim 1 , wherein the integrated structure is formed from an InGaAsP (Indium-Gallium-Arsenic-Phosphorus)-based semiconductor material.
12. A tunable laser, comprising:
a base;
an integrated structure operatively coupled to the base, having a front facet and a substantially non-reflective rear facet optically coupled via a waveguide passing therethrough, the integrated structure further including;
a gain section to emit a plurality of photons in response to a first electrical input, having a facet defining the rear facet of the integrated structure;
a phase control section disposed adjacent to the gain section, to modulate an optical path length of a portion of the waveguide passing through the control section in response to a second electrical input; the phase control section having;
a partially-reflective mirror optically coupled to the portion of the waveguide passing through the phase control section, the partially-reflective mirror having a reflectivity of approximately 2-10 percent;
a modulator section disposed adjacent to the phase control section, to modulate an optical output passing through a portion of the waveguide passing through the modulator section in response to a third electrical input, and having a facet defining the front facet of the integrated structure;
a reflective element operatively coupled to the base and disposed opposite the substantially non-reflective rear facet to form an external cavity; and
a tunable filter including at least one optical element operatively coupled to the base and disposed in the external cavity.
13. The tunable laser of claim 12 , wherein the portion of the waveguide passing through the phase control section comprises an offset quantum-well structure or a quantum-well intermixed structure.
14. The tunable laser of claim 12 , further comprising:
a second modulator optically coupled to the waveguide at the front facet of the integrated structure, wherein the second modulator comprises one of an electroabsorption-, Mach-Zehnder-, or directional coupler-based modulator; and
coupling optics disposed between the second modulator and the front facet of the integrated structure and configured to optically couple the second modulator to the waveguide.
15. The apparatus of claim 1 , wherein the partially-reflective mirror is effectuated by a gap formed between the phase control section and the modulator section.
16. The tunable laser of claim 12 , wherein the tunable filter comprises first and second tunable filters.
17. The apparatus of claim 1 , wherein the tunable filter comprises a Vernier tuning mechanism including respective first and second optical filters having respective sets of transmission peaks having slightly different free spectral ranges and similar finesses, and wherein tuning is performed by shifting the set of transmission peaks of the second optical filter relative to the set of transmission peaks of first optical filter to align a single transmission peak of each of the first and second sets of transmission peaks.
18. A telecommunication switch comprising;
a plurality of fiber line cards, each including,
a multi-stage multiplexer/demultiplexer;
a circulator bank, comprising a plurality of circulators operatively coupled to the multi-stage multiplexer/demultiplexer;
a receiver bank, comprising a plurality of receivers operatively coupled to respective circulators; and
a transmitter bank, comprising a plurality of transmitters operatively coupled to respective circulators, each transmitter comprising at tunable external cavity diode laser (ECDL), including;
a base;
an integrated structure operatively coupled to the base, having a front facet and a substantially non-reflective rear facet optically coupled via a waveguide passing therethrough, the integrated structure further including:
a gain section to emit a plurality of photons in response to a first electrical input, having a facet defining the rear facet of the integrated structure;
a phase control section disposed adjacent to the gain section, to modulate an optical path length of a portion of the waveguide passing through the control section in response to a second electrical input;
a modulator section disposed adjacent to the phase control section, to modulate an optical output passing through a portion of the waveguide passing through the modulator section in response to a third electrical input, having a facet defining the front facet of the integrated structure; and
a partially-reflective mirror disposed between the phase control section and the modulator section, the partially-reflective mirror having a reflectivity of approximately 2-10 percent;
a reflective element, operatively coupled to the base and disposed opposite the substantially non-reflective rear facet to form an external cavity; and
a tunable filter including at least one optical element operatively coupled to the base and disposed in the external cavity.
19. The telecommunications switch of claim 18 , wherein at least one ECDL employs a Vernier tuning mechanism including respective first and second optical filters having respective sets of transmission peaks having slightly different free spectral ranges and similar finesses, and wherein tuning is performed by shifting the set of transmission peaks of the second optical filter relative to the set of transmission peaks of first optical filter to align a single transmission peak of each of the first and second sets of transmission peaks.
20. The telecommunications switch of claim 19 , wherein the first and second optical filters comprise respective thermally-tunable etalons.