IP Library Granted Patent US 6,969,680
Granted Patent B2
US 6,969,680 · App. 10/814,616 · Granted Nov 29, 2005

Method for making shielded capacitor structure

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Quick Facts
Patent No.
US 6,969,680
App. No.
10/814,616
Granted
Nov 29, 2005
Kind
B2
Abstract

A method and apparatus if provided for shielding a capacitor structure formed in a semiconductor device. In a capacitor formed in an integrated circuit, one or more shields are disposed around layers of conductive strips to shield the capacitor. The shields confine the electric fields between the limits of the shields.

Claims (32)

1. A method for providing a capacitance between a first node and a second node on a semiconductor substrate, the method comprising:

forming a plurality of layers of conductive strips on the substrate;

configuring each of the layers to have a plurality of conductive strips, with the conductive strips in each layer being alternately connected to the first and second nodes,

forming a conductive plate adjacent to the plurality of layers of conductive strips; and

coupling the conductive plate to one of the nodes.

2. The method of claim 1 , wherein the plurality of layers of conductive strips are aligned so that strips connected to the first node lie above strips connected to the second node.

3. The method of claim 1 , wherein the conductive plate is disposed beneath the lowest of the plurality of layers of conductive strips.

4. The method of claim 3 , the method further comprising forming a second conductive plate disposed above the highest of the plurality of layers of conductive strips.

5. The method of claim 4 , wherein the conductive plate is coupled to the first node and the second conductive plate is coupled to the second node.

6. The method of claim 4 , wherein the conductive plate is coupled to the first node and the second conductive plate is also coupled to the first node.

7. The method of claim 1 , wherein the conductive plate is disposed above the highest of the plurality of layers of conductive strips.

8. The method of claim 1 , wherein the conductive plate is disposed to the side of the plurality of layers of conductive strips.

9. A method of shielding a capacitor structure formed on a semiconductor substrate, the capacitor structure providing capacitance between a first node and a second node, the method comprising:

forming one or more layers of conductive strips on the substrate;

configuring each of the layers to have a plurality of conductive strips, with each of the conductive strips in each layer being connected to one of the first or second nodes, and

forming a conductive shield adjacent to the capacitor structure for shielding the capacitor structure.

10. The method of claim 9 , further comprising connecting the conductive shield to the first node.

11. The method of claim 9 , further comprising configuring the conductive strips in each layer to be alternately connected to the first and second nodes.

12. The method of claim 11 , wherein the one or more of layers of conductive strips are aligned so that strips connected to the first node lie above strips connected to the second node.

13. The method of claim 9 , wherein the conductive shield is disposed beneath the lowest of the one or more layers of conductive strips.

14. The method of claim 13 , the method further comprising forming a second conductive shield disposed above the highest of the one or more layers of conductive strips.

15. A method of providing a power amplifier for amplifying signals in an RF apparatus, the method comprising:

forming a power amplifier circuit on a semiconductor substrate, the power amplifier circuit having first and second nodes;

forming one or more layers of conductive strips on the substrate;

configuring each of the layers to have a plurality of conductive strips, with each of the conductive strips in each layer being connected to one of the first or second nodes to provide a capacitance between the first and second nodes;

forming a conductive shield adjacent to the capacitor structure for shielding the capacitor structure; and

coupling the conductive shield to one of the nodes.

16. The method of claim 15 , further comprising connecting the conductive shield to the first node.

17. The method of claim 15 , further comprising configuring the conductive strips in each layer to be alternately connected to the first and second nodes.

18. The method of claim 17 , wherein the one or more of layers of conductive strips are aligned so that strips connected to the first node lie above strips connected to the second node.

19. The method of claim 15 , wherein the conductive shield is disposed beneath the lowest of the one or more layers of conductive strips.

20. The method of claim 19 , the method further comprising forming a second conductive shield disposed above the highest of the one or more layers of conductive strips.

Assignments (6)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 28, 2014
From: BLACK SAND TECHNOLOGIES, INC.
To: QUALCOMM INCORPORATED
Reel/Frame 034077/0072 →
RELEASE OF SECURITY INTEREST Recorded Sep 12, 2014
From: SILICON LABORATORIES INC.
To: BLACK SAND TECHNOLOGIES INC.
Reel/Frame 033729/0183 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 7, 2014
From: SILICON LABORATORIES INC.
To: BLACK SAND TECHNOLOGIES, INC.
Reel/Frame 033500/0122 →
RELEASE OF SECURITY INTEREST Recorded Jun 30, 2014
From: COMERICA BANK
To: BLACK SAND TECHNOLOGIES, INC.
Reel/Frame 033258/0225 →
MERGER Recorded Jun 27, 2014
From: WAVEFORM ACQUISITION CORPORATION
To: BLACK SAND TECHNOLOGIES, INC.
Reel/Frame 033247/0787 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 16, 2014
From: PAUL, SUSANNE A.; DUPUIS, TIMOTHY J.; NIKNEJAD, ALI M.
To: SILICON LABORATORIES, INC.
Reel/Frame 032913/0376 →