Photo-mask process and method for manufacturing a thin film transistor using the process
A photo-mask process includes the steps of: spreading a film of photo resist on a carrier ( 30, 50 ), exposing the photo resist using a mask with a predefined pattern, developing the photo resist to obtain a photo resist layer ( 36, 60 ) with the predefined pattern, depositing a layer of predetermined material on the photo resist layer and the carrier, and removing the photo resist layer and the layer of predetermined material thereon. The photo-mask process can omit a conventional etching process. That is, the photo-mask process is simplified, and its cost is lower than that of conventional photo-mask processes. A related method for manufacturing a thin film transistor is also provided.
1 . A photo-mask process, comprising the steps of:
forming a film of photo resist on a carrier;
exposing the photo resist using a mask with a predefined pattern;
developing the photo resist to obtain a photo resist layer with the predefined pattern;
depositing a layer of predetermined material on the photo resist layer and the carrier; and
removing the photo resist layer and any portion or portions of the layer of predetermined material that are on the photo resist layer.
2 . The photo-mask process of claim 1 , wherein the photo resist is a positive photo resist or a negative photo resist.
3 . The photo-mask process of claim 1 , wherein the predetermined material is a metal.
4 . The photo-mask process of claim 1 , wherein the layer of predetermined material is a transparent electrode.
5 . The photo-mask process of claim 4 , wherein the predetermined material comprises indium tin oxide or indium zinc oxide.
6 . The photo-mask process of claim 1 , wherein the photo resist layer is thicker than the layer of predetermined material.
7 . The photo-mask process of claim 1 , wherein the photo resist layer has a widened top and a narrowed bottom.
8 . A method for manufacturing a thin film transistor, the method comprising at least three photo-mask processes, wherein at least one of the photo-mask processes includes the steps of:
forming a film of photo resist on a carrier;
exposing the photo resist using a mask with a predefined pattern;
developing the photo resist to obtain a photo resist layer with the predefined pattern;
depositing a layer of predetermined material on the photo resist layer and the carrier; and
removing the photo resist layer and any portion or portions of the layer of predetermined material that are on the photo resist layer.
9 . The method of claim 8 , wherein the photo resist is a positive photo resist or a negative photo resist.
10 . The method of claim 8 , wherein the predetermined material is a metal.
11 . The method of claim 8 , wherein the layer of predetermined material is a transparent electrode.
12 . The method of claim 11 , wherein the predetermined material is indium tin oxide or indium zinc oxide.
13 . The method of claim 8 , wherein the photo resist layer is thicker than the layer of predetermined material.
14 . The method of claim 8 , wherein the photo resist layer has a widened top and a narrowed bottom.
15 . The method of claim 8 , wherein the thin film transistor is a top gate type thin film transistor.
16 . The method of claim 8 , wherein the thin film transistor is a bottom gate type thin film transistor.
17 . The method of claim 8 , wherein the method comprises three photo-mask processes.
18 . The method of claim 8 , wherein the method comprises four photo-mask processes.
19 . The method of claim 8 , wherein the method comprises five photo-mask processes.