Method of manufacturing a piezoelectric thin film resonator
View Patent ↗A method of manufacturing a piezoelectric thin film resonator forms, after forming a piezoelectric film on a substrate so as to cover a lower electrode formed on the substrate, a resist layer so as to cover the piezoelectric film, forms a mask composed of the resist layer on the piezoelectric film by forming, in the resist layer, an exposure hole for exposing a formation part of an upper electrode on the piezoelectric film, forms an electrode material layer for forming the upper electrode on the piezoelectric film exposed via the exposure hole and on the mask, and then forms the upper electrode by removing the electrode material layer on the mask by removing the mask.
1. A method of manufacturing a piezoelectric thin film resonator, the method comprising:
forming a piezoelectric film on a substrate so as to cover a lower electrode formed on the substrate,
forming a resist layer so as to cover the piezoelectric film,
forming a mask composed of the resist layer on the piezoelectric film by forming, in the resist layer, an exposure hole for exposing a formation part of an upper electrode on the piezoelectric film,
forming an electrode material layer for the upper electrode on the piezoelectric film exposed via the exposure hole and on the mask, and
forming the upper electrode by removing the electrode material layer on the mask by removing the mask.
2. The method of manufacturing a piezoelectric thin film resonator according to claim 1 , wherein forming the mask comprises forming the exposure hole such that an upper surface side, in the thickness direction of the resist layer protrudes, at a rim of the exposure hole, above the formation part more than a lower surface side.
3. The method of manufacturing a piezoelectric thin film resonator according to claim 2 , wherein after forming the resist layer, surface treating the resist layer by soaking in a benzene-type solvent, and forming the exposure hole in the resist layer so as to expose the formation part.
4. The method of manufacturing a piezoelectric thin film resonator according to claim 2 , wherein forming the exposure hole comprises forming a first resist layer that can be dissolved by a developer liquid, forming a second resist layer so as to cover the first resist layer, performing an exposure process on the second resist layer, and soaking in the developer liquid so that the exposure hole passes through both the first resist layer and the second resist layer.
5. The method of manufacturing a piezoelectric thin film resonator according to claim 1 , wherein the piezoelectric film comprises zinc oxide (ZnO).
6. The method of manufacturing a piezoelectric thin film resonator according to claim 1 , wherein the electrode material layer comprises aluminum (Al) or gold (Au).
7. A method of manufacturing a piezoelectric thin film resonator, the method comprising:
forming a resist layer so as to cover a substrate,
forming a mask composed of the resist layer on the substrate by forming, in the resist layer, an exposure hole for exposing a formation part of a lower electrode on the substrate,
forming an electrode material layer for the lower electrode on the substrate exposed via the exposure hole and on the mask,
forming the lower electrode by removing the electrode material layer on the mask by removing the mask,
forming a piezoelectric film on the substrate so as to cover the lower electrode, and
forming an upper electrode on the piezoelectric film.
8. The method of manufacturing a piezoelectric thin film resonator according to claim 7 , wherein forming the mask comprises forming the exposure hole such that an upper surface sides, in the thickness direction of the resist layer protrudes, at a rim of the exposure hole, above the formation part more than a lower surface side.
9. The method of manufacturing a piezoelectric thin film resonator according to claim 8 , wherein after forming the resist layer, surface treating the resist layer by soaking in a benzene-type solvent, and forming the exposure hole in the resist layer so as to expose the formation part.
10. The method of manufacturing a piezoelectric thin film resonator according to claim 8 , wherein forming the exposure hole comprises forming a first resist layer that can be dissolved by a developer liquid, forming a second resist layer so as to cover the first resist layer, performing an exposure process on the second resist layer, and soaking in the developer liquid so that the exposure hole passes through both the first resist layer and the second resist layer.
11. The method of manufacturing a piezoelectric thin film resonator according to claim 7 , wherein the piezoelectric film comprises zinc oxide (ZnO).
12. The method of manufacturing a piezoelectric thin film resonator according to claim 7 , wherein the electrode material layer comprises aluminum (Al) or gold (Au).
13. A method of manufacturing a piezoelectric thin film resonator, the method comprising:
forming a resist layer so as to cover a substrate,
forming a mask composed of the resist layer on the substrate by forming, in the resist layer, an exposure hole for exposing a formation part of a lower electrode on the substrate,
forming an electrode material layer for the lower electrode on the substrate exposed via the exposure hole and on the mask,
forming the lower electrode by removing the electrode material layer on the mask by removing the mask,
forming a piezoelectric film on the substrate so as to cover the lower electrode and forming a resist layer so as to cover the piezoelectric film,
forming a mask composed of the resist layer on the piezoelectric film by forming, in the resist layer on the piezoelectric film, an exposure hole for exposing a formation part of an upper electrode on the piezoelectric film,
forming an electrode material layer for the upper electrode on the piezoelectric film exposed via the exposure hole and on the mask, and
forming the upper electrode by removing the electrode material layer on the mask by removing the mask.
14. The method of manufacturing a piezoelectric thin film resonator according to claim 13 , wherein forming the mask comprises forming the exposure hole such that an upper surface side, in the thickness direction of the resist layer protrudes, at a rim of the exposure hole, above the formation part more than a lower surface side.
15. The method of manufacturing a piezoelectric thin film resonator according to claim 14 , wherein after forming the resist layer, surface treating the resist layer by soaking in a benzene-type solvent, and forming the exposure hole in the resist layer so as to expose the formation part.
16. The method of manufacturing a piezoelectric thin film resonator according to claim 14 , wherein forming the exposure hole comprises forming a first resist layer that can be dissolved by a developer liquid, forming a second resist layer so as to cover the first resist layer, performing an exposure process on the second resist layer, and soaking in the developer liquid so that the exposure hole passes through both the first resist layer and the second resist layer.
17. The method of manufacturing a piezoelectric thin film resonator according to claim 13 , wherein the piezoelectric film comprises zinc oxide (ZnO).
18. The method of manufacturing a piezoelectric thin film resonator according to claim 13 , wherein the electrode material layers comprise aluminum (Al) or gold (Au).