Process of fabricating high resistance CMOS resistor
View Patent ↗A process of forming a high resistance CMOS resistor with a relatively small die size is provided. According to an aspect of the present invention, the process of fabricating a high resistance resistor is a standard CMOS process that does not require any additional masking. An n-well is firstly formed in a p-type silicon substrate. A nitride film is then deposited and patterned to form a patterned mask layer. The patterned mask layer serves as a mask. A p-field region is formed in the n-well to form a CMOS resistor. The CMOS resistor according to the present invention has a resistance of 10 kΩ–20 kΩ per square.
1. A process of fabricating a high resistance CMOS resistor, comprising the steps of:
providing a p-type silicon substrate;
forming an n-well in said p-type silicon substrate;
forming a p-well in a non-active area of said p-type silicon substrate;
forming a pad oxide layer on the surface of said p-type silicon substrate;
forming a first p-field region into said p-well and a second p-field region into said n-well, wherein said second p-field region forms a CMOS resistor;
forming a field oxide layer over said CMOS resistor;
forming an n-type contact region in said n-well;
forming two p-type contact regions respectively as a first ohmic contact and a second ohmic contact of said CMOS resistor respectively;
forming a patterned BPSG layer to build two contact openings exposing a portion of said n-type contact region and said two p-type contact regions;
forming two metal contact plugs in said contact openings to electrically connect to said first ohmic contact and said second ohmic contact of said CMOS resistor, and depositing a passivation layer over said contact plugs covering said CMOS resistor.
2. The method of claim 1 , wherein said p-type silicon substrate is doped with boron ions, and has a resistance in a range of 8Ω to 12Ω per cm.
3. The method of claim 1 , wherein said n-well is formed by implanting phosphorus ions using an energy level of 100 KeV, and with a dosage level in a range of 6×10 12 to 9×10 12 ions/cm 2 .
4. The method of claim 1 , wherein said p-well is formed by implanting boron ions using an energy level of 40 KeV, and with a dosage level in a range of 8×10 12 to 9×10 12 ions/cm 2 .
5. The method of claim 1 , further comprising a step of performing a thermal annealing process at a temperature of 1150° C. for diffusing ions of said n-well and said p-well into respective regions in said p-type silicon substrate.
6. The method of claim 1 , wherein said pad oxide is grown to a thickness of 350 angstroms at a temperature of 900° C.
7. The method of claim 1 , further comprising a step of growing a nitride layer to a thickness of 1250 angstroms at a temperature of 850° C. and etching said nitride layer to form a patterned mask layer which serves as a mask for forming said first p-field region and said second p-field region.
8. The method of claim 1 , wherein said first p-field region and said second p-field region are formed by implanting boron ions using an energy level of 50 KeV, and with a dosage level in a range of 4×10 13 to 6×10 13 ions/cm 2 .
9. The method of claim 1 , wherein said field oxide layer is grown to a thickness of 5000 to 6000 angstroms by performing a thermal annealing process at a temperature of 980° C.
10. The method of claim 1 , wherein said n-type contact region is formed by implanting arsenic using an energy level of 80 KeV, and with a dosage level of 4×10 15 to 6×10 15 ions/cm 2 .
11. The method of claim 1 , wherein said two p-type contact regions are formed by implanting boron ions using an energy level of 25 KeV, and with a dosage level of 2×10 15 to 4×10 15 ions/cm 2 .
12. The method of claim 1 , wherein said metal contact plugs comprises AlSiCu.
13. The method of claim 1 , wherein said BPSG layer has a thickness in a range of 5000 to 8000 angstroms.
14. The method of claim 1 , wherein said passivation layer is an oxide layer having a thickness in a range of 5000 to 10000 angstroms.
15. The method of claim 1 , wherein said CMOS resistor has at least a resistance of 10 kΩ per square.
16. The method of claim 1 , wherein said CMOS resistor is compatible with a standard CMOS process.
17. A process of fabricating a high resistance CMOS resistor, comprising the steps of:
providing a p-type silicon substrate;
forming an n-well in the p-type silicon substrate;
forming a p-well in a non-active area of said p-type silicon substrate;
forming a pad oxide layer on the surface of said p-type silicon substrate;
forming a first p-field region into said p-well and a second p-field region into said n-well, wherein the second p-field region forms a CMOS resistor;
forming a field oxide layer over the CMOS resistor;
forming an n-type contact region in said n-well; and
forming two p-type contact regions respectively as a first ohmic contact and a second ohmic contact of the CMOS resistor respectively.
18. The step according to claim 17 , further comprising:
forming a patterned BPSG layer as an intermetal dielectric layer to build two contact openings exposing a portion of said n-type contact region and said two p-type contact regions.
19. The step according to claim 18 , further comprising:
forming two metal contact plugs in said contact openings to electrically connect to said first ohmic contact and said second ohmic contact of said CMOS resistor.
20. The step according to claim 19 , further comprising:
depositing a passivation layer over said contact plugs covering said CMOS resistor.
21. The step according to claim 17 , wherein said CMOS resistor has at least a resistance of 10 kΩ per square.
22. The step according to claim 17 , wherein said process is compatible with a standard CMOS process.