IP Library Granted Patent US 7,190,165
Granted Patent B2
US 7,190,165 · App. 10/823,273 · Granted Mar 13, 2007

Tunable superconducting resonator and methods of tuning thereof

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Quick Facts
Patent No.
US 7,190,165
App. No.
10/823,273
Granted
Mar 13, 2007
Kind
B2
Abstract

A method of tuning a high temperature superconductor (HTS) resonator includes the steps of providing a HTS inductor and a HTS capacitor, the HTS capacitor being electrically connected to the HTS inductor. A tuning body is provided adjacent to the HTS inductor and the HTS capacitor. The relative position of the tuning body with respect to the HTS inductor and the HTS capacitor is altered so as to tune the resonator. A tunable resonant circuit is provided that includes a substrate having a planar surface. At least one resonator formed from HTS material is disposed on the substrate, the resonator having one or more turns that when combined, turn through greater than 360°.

Claims (10)

1. A resonant circuit comprising:

a substrate having a planar surface;

at least one resonator formed from a high temperature superconducting material formed on the substrate, the resonator having one or more turns, when combined, turn through greater than 540°, the resonator turns including at least one left hand turn and one right hand turn.

2. The resonant circuit of claim 1 , wherein the at least one high temperature superconducting resonator is formed using a thallium-based superconductor.

3. The resonant circuit of claim 1 , wherein the at least one high temperature superconducting resonator is formed using a yttrium-based material.

4. The resonant circuit of claim 1 , wherein the at least one high temperature superconducting resonator is formed using a bismuth-based material.

5. The tunable resonant circuit of claim 1 , wherein the at least one high temperature superconducting resonator is formed with an epitaxial thin film superconductor.

6. The resonant circuit of claim 1 , wherein the substrate comprises a dielectric material.

7. The resonant circuit of claim 6 , wherein the substrate is a wafer having a diameter of two inches or less.

8. The resonant circuit of claim 1 further including a tuning structure.