Solid state imaging device including annular and center lens in contact with each other
View Patent ↗Each intralayer lens disposed between a color filter 120 and photoelectric conversion sections has a Fresnel lens structure composed of a center lens 132 and an annular lens 134 . As a result, the thickness of the intralayer lenses is reduced, and positions of upper lenses can be lowered without having to reduce the thickness of a color filter.
1. A solid-state imaging device in which a pixel-by-pixel array of photoelectric conversion sections each generate an electrical charge in accordance with an amount of light entering the photoelectric conversion section, and the electrical charges generated by the photoelectric conversion sections are converted to an electrical signal to be output, comprising:
a color filter layer disposed above the photoelectric conversion sections, the color filter layer allowing light of a specific wavelength to pass therethrough;
upper lenses disposed above the color filter layer, the upper lenses causing incident light to be converged so as to enter the color filter layer; and
intralayer lenses disposed between the color filter layer and the photoelectric conversion sections, each intralayer lens causing the light converged by each upper lens to be further converged so as to enter a corresponding one of the photoelectric conversion sections,
wherein each intralayer lens includes a center lens having a circular and curved surface whose center is on an optical axis of the center lens and also includes at least one annular lens which is disposed on the outside of the center lens and which has an annular and belt-like face which is concentric to the center lens with respect to the optical axis, the at least one annular lens and the center lens being in contact with each other.
2. The solid-state imaging device according to claim 1 , wherein a refractive index of the center lens and a refractive index of the at least one annular lens are not equal.
3. The solid-state imaging device according to claim 2 , wherein a refractive index of the center lens and a refractive index of the at least one annular lens increase toward outside and away from the optical axis of the center lens.
4. The solid-state imaging device according to claim 2 , wherein a refractive index of the center lens and a refractive index of the at least one annular lens decrease toward outside and away from the optical axis of the center lens.
5. The solid-state imaging device according to claim 1 , wherein a width of the at least one annular lens along a radius direction thereof decreases toward outside and away from the optical axis of the center lens.
6. The solid-state imaging device according to claim 1 , wherein each intralayer lens comprises SiN (silicon nitride).