IP Library Granted Patent US 7,179,527
Granted Patent B2
US 7,179,527 · App. 10/826,290 · Granted Feb 20, 2007

Substrate with transparent conductive oxide film, process for its production and photoelectric conversion element

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Quick Facts
Patent No.
US 7,179,527
App. No.
10/826,290
Granted
Feb 20, 2007
Kind
B2
Abstract

A substrate with a transparent conductive oxide film (especially a substrate with a transparent conductive oxide film useful as a substrate for a thin-film silicon-based solar cell) being excellent in mass production efficiency and being characterized by having a low resistance, a high transparency and a good light scattering performance over a full wavelength region (300 nm to 3 μm) of solar ray, a process for its production, and a photoelectric conversion element (especially, solar cell) employing the substrate, are presented. A substrate with a transparent conductive oxide film, comprising a substrate and a transparent conductive oxide layer formed on the substrate and constituted by a plurality of ridges is and a plurality of flat portions, wherein the surfaces of the ridges and the flat portions, have many continuous micron-size protrusions.

Claims (5)

1. A substrate with a transparent conductive oxide film, comprising a substrate and a transparent conductive oxide film provided on the substrate and constituted by a plurality of ridges and a plurality of flat portions,

wherein the surfaces of the ridges and the flat portions have a plurality of continuous micron-size protrusions, and the plurality of ridges have a discontinuous portion and a continuous portion, the spacing between ridges being from 0 to 2.0 μm.

2. The substrate with a transparent conductive oxide film according to claim 1 , wherein the protrusions have basal plane diameters of from 0.1 to 0.3 μm and height/basal plane diameter ratios of from 0.7 to 1.2.

3. The substrate with a transparent conductive oxide film according to claim 1 , wherein the substrate with the transparent conductive oxide film has a sheet resistance of from 8 to 20 Ω/□ and a transmittance of from 80 to 90% at 550 nm measured by an immersed method.

4. The substrate with a transparent conductive oxide film according to claim 1 , wherein the substrate with the transparent conductive oxide film, has a haze of from 10 to 95% over a full wavelength region of from 400 to 800 nm.

Assignments (3)
CHANGE OF NAME Recorded Aug 7, 2018
From: ASAHI GLASS COMPANY, LIMITED
To: AGC INC.
Reel/Frame 046730/0786 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 17, 2010
From: YOSHIKAWA, YUKIO
To: ASAHI GLASS COMPANY, LIMITED
Reel/Frame 025517/0537 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 27, 2004
From: SATO, KAZUO; TANEDA, NAOKI; FUKAWA, MAKOTO; AOMINE, NOBUTAKA; KAMBE, MIKE
To: ASAHI GLASS COMPANY, LIMITED
Reel/Frame 015743/0298 →