IP Library Granted Patent US 7,129,785
Granted Patent B1
US 7,129,785 · App. 10/826,464 · Granted Oct 31, 2006

Methods and systems for biasing a power amplifier

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Quick Facts
Patent No.
US 7,129,785
App. No.
10/826,464
Granted
Oct 31, 2006
Kind
B1
Abstract

An amplifier circuit including a first transistor and a biasing circuit. The biasing circuit includes a process compensation circuit. The biasing circuit being coupled to a gate of the first transistor. A method for biasing an amplifier circuit is also included.

Claims (49)

1. An amplifier circuit comprising:

a first transistor; and

a biasing circuit including a process compensation circuit, the biasing circuit being coupled to a gate of the first transistor:

wherein the process compensation circuit includes a replica device circuit having

a replica transistor that replicates the characteristics of the first transistor, and

a constant current source coupled to the replica transistor.

2. The circuit of claim 1 , wherein the replica transistor is connected as a diode.

3. The circuit of claim 1 , wherein the process compensation circuit and the first transistor are included in a single integrated circuit.

4. An amplifier circuit comprising:

a first transistor; and

a biasing circuit including a process compensation circuit, the biasing circuit being coupled to a gate of the first transistor;

wherein the biasing circuit further includes a bias control circuit coupled to the gate of the first transistor; and

wherein the bias control circuit includes a variable current source coupled to a control circuit.

5. The circuit of claim 4 , wherein the control circuit includes a digital to analog converter.

6. An amplifier circuit comprising:

a first transistor; and

a biasing circuit including a process compensation circuit, the biasing circuit being coupled to a gate of the first transistor;

wherein the biasing circuit further includes a temperature compensation circuit coupled to the gate of the first transistor; and

wherein the temperature compensation circuit includes a temperature proportional current source.

7. The circuit of claim 6 , wherein the temperature compensation circuit and the first transistor are included in a single integrated circuit.

8. The circuit of claim 1 , wherein the amplifier circuit is included within a transmitter.

9. The circuit of claim 1 , wherein the amplifier circuit is included within a wireless data link transmitter.

10. A method of supplying a process compensated DC bias voltage comprising:

generating a current using a constant current source;

producing the process compensated DC bias voltage in a process compensation circuit based on the current; and

applying the process compensated DC bias voltage to a gate of a first transistor, the process compensation circuit and the first transistor being on a single integrated circuit.

11. A method of supplying a process compensated DC bias voltage comprising:

producing the process compensated DC bias voltage in a process compensation circuit; and

applying the process compensated DC bias voltage to a gate of a first transistor, the process compensation circuit and the first transistor being on a single integrated circuit;

wherein the process compensated DC bias voltage is substantially equal to a threshold voltage of the first transistor.

12. The method of claim 10 , further comprising adjusting the process compensated DC bias voltage to select a desired class of operation for the first transistor.

13. The method of claim 12 , wherein adjusting the process compensated DC bias voltage includes receiving a control signal.

14. The method of claim 13 , wherein the control signal includes a digital control signal.

15. The method of claim 14 , wherein receiving the control signal includes converting the digital control signal to an analog signal.

16. The method of claim 10 , further comprising adjusting the process compensated DC bias voltage to compensate for a temperature of the integrated circuit.

17. A data link system comprising:

a first transmitter including an amplifier that includes:

a first transistor; and

a biasing circuit including a process compensation circuits the biasing circuit being coupled to a gate of the first transistors wherein the process compensation circuit and the first transistor are included in a single integrated circuit;

wherein the process compensation circuit includes a replica device circuit having

a replica transistor that replicates the characteristics of the first transistor, and

a constant current source coupled to the replica transistor.

18. A power amplifier circuit comprising:

a first transistor; and

a biasing circuit coupled to a gate of the first transistor, the biasing circuit including:

a process compensation circuit;

a bias control circuit coupled to the gate of the first transistor; and

a temperature compensation circuit coupled to the gate of the first transistor, wherein the process compensation circuit, the temperature compensation circuit and the first transistor are included in a single integrated circuit; and

wherein the temperature compensation circuit includes a temperature proportional current source.

Assignments (3)
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENTS Recorded Feb 3, 2017
From: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
To: BROADCOM CORPORATION
Reel/Frame 041712/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 1, 2017
From: BROADCOM CORPORATION
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 041706/0001 →
PATENT SECURITY AGREEMENT Recorded Feb 11, 2016
From: BROADCOM CORPORATION
To: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
Reel/Frame 037806/0001 →