Method for treating semiconductor processing components and components formed thereby
View Patent ↗A method for treating a semiconductor processing component, including: exposing the component to a halogen gas at an elevated temperature, oxidizing the component to form an oxide layer, and removing the oxide layer.
1. A semiconductor processing component comprising silicon carbide, the component having a surface having an R a less than about 2 microns, and an impurity content of less than about 1000 ppm along an outer portion of the component as measured by SIMS at a depth of 10 nm from the surface of the component.
2. The component of claim 1 , wherein the component comprises a substrate and a silicon carbide coating thereon.
3. The component of claim 1 , wherein the component is machined to have said R a less than about 2 microns.
4. The method-component of claim 1 , wherein said impurity content is less than about 500 ppm.
5. The component of claim 1 , wherein said impurity content is less than about 200 ppm.
6. A semiconductor processing component for receiving a semiconductor wafer, the component having a surface having an R a less than about 2 microns, and an impurity content of less than about 1000 ppm along an outer portion of the component, as measured by SIMS at dept of 10 nm from the surface.