IP Library › Granted Patent US 7,233,073
Granted Patent B2
US 7,233,073 · App. 10/830,134 · Granted Jun 19, 2007

Semiconductor device and method for fabricating the same

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Quick Facts
Patent No.
US 7,233,073
App. No.
10/830,134
Granted
Jun 19, 2007
Kind
B2
Abstract

After forming a hole in an insulating film, a first tungsten film is formed over the wall and bottom surfaces of the hole. Then, a second tungsten film is formed by using the first tungsten film as a seed layer to fill up the hole. When the first tungsten film is formed, the average value of the diameters of crystal grains of the portion of the first tungsten film which is formed on the bottom surface of the hole is suppressed to 30 nm or less.

Claims (6)

1. A semiconductor device comprising a tungsten plug buried in a hole provided in an insulating film,

a portion of the tungsten plug which is formed on a bottom surface of the hole includes crystal grains having a columnar structure,

an average value of diameters of the crystal grains of a bottom portion of the columnar structure being 30 nm or less.

2. The semiconductor device of claim 1 , wherein an adhesion layer is provided between the insulating film and the tungsten plug.

3. The semiconductor device of claim 2 , wherein the adhesion layer is a multilayer film composed of a titanium film and a titanium nitride film which are stacked successively in layers.

4. The semiconductor device of claim 1 , wherein the hole has an opening diameter of 0.18 μm or less.