Method for growth of group III-V semiconductor material on a dielectric
View Patent ↗Formation of a regrowth layer of a Group III–V semiconductor material is facilitated by prior formation of an intermediate layer, selected primarily for its smooth morphology properties. The intermediate layer is formed over an underlying substrate and over a dielectric layer formed over portions of the substrate. The intermediate layer maintains the monocrystalline properties of the underlying substrate in regions other than those covered by the dielectric layer, and improves the electrical and morphology properties of the regrowth layer formed over the intermediate layer.
1. A method for fabricating a Group III–V semiconductor structure, comprising the following steps performed in the order in which they are recited:
forming a substrate;
forming a dielectric layer over at least one selected protion of the substrate;
forming an intermediate layer over the dielectric layer and still exposed portions of the substrate, wherein the intermediate layer is selected for its smooth morphology properties; and
forming a Group III–V regrowth layer over the intermedate layer, wherein this step is facilitated by the presence of the intermediate layer.
2. A method as defined in claim 1 , wherein:
the substrate is a Group III–V semiconductor material.
3. A method as defined in claim 1 , wherein:
the step of forming an intermediate layer comprises selecting a Group III–V semiconductor material for the intermediate layer.
4. A method as defined in claim 3 , wherein:
the intermediate layer is selected from the group consisting of Indium gallium arsenide (InGeAs), indium arsenide (InAs), gallium antimonide (GaSb) and indium antimonide (InSb).
5. A method as defined in claim 4 , wherein:
the Group III–V regrowth layer is of p-type indium antimonide (InSb).
6. A method as defined in claim 1 , wherein the steps of forming semiconductor layers are effected by molecular beam epitaxy (MBE).