Multifunctional optoelectronic thyristor and integrated circuit and optical transceiver employing same

1. An apparatus comprising:

an optoelectronic thyristor device formed within a resonant cavity on a substrate, said optoelectronic thyristor device including an anode terminal, injector control terminals coupled to corresponding complementary-type first and second modulation doped quantum well interfaces, and a cathode terminal; and

circuit means including first circuitry and second circuitry, said first circuitry operably coupled to said injector control terminals for injecting charge into and removing charge from each of said first and second modulation doped quantum well interfaces of said optoelectronic thyristor device, and said second circuitry operably coupled to said optoelectronic thyristor device for supplying varying bias current between said anode terminal and said cathode terminal of said optoelectronic thyristor device;

wherein said circuit means dynamically switches said optoelectronic thyristor device between a transmit mode configuration and a receive mode configuration,

wherein in the transmit mode configuration, said optoelectronic thyristor device is modulated between a non-lasing state and a lasing state in accordance with an input digital electrical signal, to thereby produce an output digital optical data signal that corresponds to the input digital electrical signal that is emitted from said resonant cavity for transmission, and

wherein in the receive mode configuration, said optoelectronic thyristor device is modulated between a non-lasing OFF state and a non-lasing ON state in accordance with an input digital optical signal that is injected into said resonant cavity, to thereby produce an output digital electrical data signal that corresponds to the input digital optical signal.

2. An apparatus according to claim 1 , wherein:

said first circuitry of said circuit means includes a plurality of current sources that modulate said optoelectronic thyristor device between said lasing state and said non-lasing state in the transmit mode configuration.

3. An apparatus according to claim 1 , wherein:

said second circuitry of said circuit means provides a bias current between the anode terminal and cathode terminal less than a threshold lasing current in the receive mode configuration.

4. An apparatus according to claim 1 , wherein:

said second circuitry of said circuit means includes transmit bias load circuitry operably coupled to said cathode terminal in the transmit mode configuration and receive bias load circuitry operably coupled to said cathode terminal in the receive mode configuration.

5. An apparatus according to claim 1 , wherein:

said circuit means comprises control circuitry, operably coupled to said first and second circuitry, said control circuitry operating in the transmit mode configuration to control said first and second circuitry to modulate said optoelectronic thyristor device between a non-lasing state and a lasing state in accordance with the input digital electrical signal to thereby produce the output digital optical data signal, and said control circuitry operating in the receive mode configuration to control said first and second circuitry to modulate said optoelectronic thyristor device between a non-lasing OFF state and a non-lasing ON state in accordance with the input digital optical electrical signal injected into said resonant cavity to thereby produce the output digital electrical data signal.

6. An apparatus according to claim 5 , wherein:

said optoelectronic thyristor and said circuit means, are realized by devices integrally formed on a common substrate.

7. An apparatus according to claim 6 , wherein:

said devices are formed from a common epitaxial structure deposited on the common substrate.

8. An apparatus according to claim 7 , wherein:

said common epitaxial structure comprises a III-V material system.

9. An apparatus according to claim 1 , further comprising:

input/output circuitry that (i) receives an input data signal over a first data link coupled thereto, generates the input digital electrical signal in accordance with the received input data signal, and supplies the input digital electrical signal to said circuit means, and (ii) receives the output digital electrical signal, generates an output data signal in accordance with the received output digital electrical signal, and transmits the output data signal over a second data link coupled thereto.

10. An apparatus according to claim 9 , wherein:

said first and second data links comprise separate transmit and receive data links.

11. An apparatus according to claim 9 , wherein:

said first and second data links comprise a bi-directional data link.

12. An apparatus according to claim 9 , wherein:

said optoelectronic thyristor, said circuit means, and said input/output circuitry is integrated onto a common substrate.

13. The apparatus according to claim 1 , wherein:

said resonant cavity is adapted for vertical emission and injection of light.

14. The apparatus according to claim 1 , wherein:

said resonant cavity is adapted for in-plane emission and injection of light.

15. The apparatus according to claim 14 , further comprising:

a passive waveguide device that guides light to and from said resonant cavity.

16. The apparatus according to claim 15 , wherein:

said passive waveguide is integrally formed with said optoelectronic thyristor device on a common substrate.

17. The apparatus according to claim 1 , further comprising:

an optical interface operably coupled between said optoelectronic thyristor device and a transmission medium.

18. The apparatus according to claim 17 , wherein:

said transmission medium comprises an optical fiber.

19. The apparatus according to claim 17 , wherein:

said transmission medium comprises free-space.

20. The apparatus according to claim 1 , wherein:

said optoelectronic thyristor device is controllably switched between the transmit-mode configuration and the receive-mode configuration to provide for variable bandwidth over an optical communication link terminated by said apparatus.

21. An integrated circuit comprising:

an optoelectronic thyristor device formed within a resonant cavity on a substrate, said optoelectronic thyristor device including an anode terminal, injector control terminals coupled to corresponding complementary-type first and second modulation doped quantum well interfaces, and a cathode terminal; and

circuit means, integrally formed on said substrate, including first circuitry and second circuitry, said first circuitry operably coupled to said injector control terminals for injecting charge into and removing charge from each of said first and second modulation doped quantum well interfaces of said optoelectronic thyristor device, and said second circuitry operable coupled to said optoelectronic thyristor device for supplying varying bias current between said anode terminal and said cathode terminal of said optoelectronic thyristor device;

wherein said circuit means dynamically switches said optoelectronic thyristor device between a transmit mode configuration and a receive mode configuration,

wherein in the transmit mode configuration, said optoelectronic thyristor device is modulated between a non-lasing state and a lasing state in accordance with an input digital electrical signal, to thereby produce an output digital optical data signal that corresponds to the input digital electrical signal that is emitted from said resonant cavity for transmission therefrom, and

wherein in the receive mode configuration, said optoelectronic thyristor device is modulated between a non-lasing OFF state and a non-lasing ON state in accordance with an input digital optical signal that is injected into said resonant cavity, to thereby produce an output digital electrical data signal that corresponds to the input digital optical signal.

22. An integrated circuit according to claim 21 , wherein:

said first circuitry of said circuit means includes a plurality of current sources that modulate said optoelectronic thyristor device between said lasing state and said non-lasing state in the transmit mode configuration.

23. An integrated circuit according to claim 21 , wherein:

said second circuitry of said circuit means provides a bias current between the anode terminal and cathode terminal less than a threshold lasing current in the receive mode configuration.

24. An integrated circuit according to claim 21 , wherein:

said second circuitry of said circuit means comprises transmit bias load circuitry operably coupled to said cathode terminal in the transmit mode configuration and receive bias load circuitry operably coupled to said cathode terminal in the receive mode configuration.

25. An integrated circuit according to claim 21 , wherein:

said circuit means comprises control circuitry, operably coupled to said first and second circuitry, said control circuitry operating in the transmit mode configuration to control said first and second circuitry to modulate said optoelectronic thyristor device between a non-lasing state and a lasing state in accordance with the input digital electrical signal to thereby produce the output digital optical data signal, and said control circuitry operating in the receive mode configuration to control said first and second circuitry to modulate said optoelectronic thyristor device between a non-lasing OFF state and a non-lasing ON state in accordance with the input digital optical electrical signal injected into said resonant cavity to thereby produce the output digital electrical data signal.

26. An integrated circuit according to claim 25 , wherein:

said resonant cavity is adapted for vertical emission and injection of light.

27. An integrated circuit according to claim 25 , wherein:

said resonant cavity is adapted for in-plane emission and injection of light.

28. An integrated circuit according to claim 27 , further comprising:

a passive waveguide device that guides light to and from said resonant cavity, said passive waveguide integrally formed with said optoelectronic thyristor device on said substrate.

29. An optical transceiver module comprising:

an integrated circuit including an optoelectronic thyristor device formed within a resonant cavity on a substrate and circuit means integrally formed on said substrate, said optoelectronic thyristor device including an anode terminal, injector control terminals coupled to corresponding complementary-type first and second modulation doped quantum well interfaces, and a cathode terminal, said circuit means including first circuitry and second circuitry, said first circuitry operably coupled to said injector control terminals for injecting charge into and removing charge from each of said first and second modulation doped quantum well interfaces of said optoelectronic thyristor device, and said second circuitry operable coupled to said optoelectronic thyristor device for supplying varying bias current between said anode terminal and said cathode terminal of said optoelectronic thyristor device;

wherein said circuit means dynamically switches said optoelectronic thyristor device between a transmit mode configuration and a receive mode configuration, wherein in the transmit mode configuration, said optoelectronic thyristor device is modulated between a non-lasing state and a lasing state in accordance with an input digital electrical signal, to thereby produce an output digital optical data signal that corresponds to the input digital electrical signal that is emitted from said resonant cavity for transmission by the optical transceiver module, and wherein in the receive mode configuration, said optoelectronic thyristor device is modulated between an non-lasing OFF state and a non-lasing ON state in accordance with an input digital optical signal that is injected into said resonant cavity, to thereby produce an output digital electrical data signal that corresponds to the input digital optical signal; and

an optical interface operably coupled between said optoelectronic thyristor device and an optical transmission medium.

30. An optical transceiver module according to claim 29 , wherein:

said first circuitry of said circuit means includes a plurality of current sources that modulate said optoelectronic thyristor device between said lasing state and said non-lasing state in the transmit mode configuration.

31. An optical transceiver module according to claim 29 , wherein:

said second circuitry of said circuit means provides a bias current between the anode terminal and cathode terminal less than a threshold lasing current in the receive mode configuration.

32. An optical transceiver module according to claim 29 , wherein:

said second circuitry of said circuit means comprises transmit bias load circuitry operably coupled to said cathode terminal in the transmit mode configuration and receive bias load circuitry operably coupled to said cathode terminal in the receive mode configuration.

33. An optical transceiver module according to claim 29 , wherein:

said circuit means comprises control circuitry, operably coupled to said first and second circuitry, said control circuitry operating in the transmit mode configuration to control said first and second circuitry to modulate said optoelectronic thyristor device between a non-lasing state and a lasing state in accordance with the input digital electrical signal to thereby produce the output digital optical data signal, and said control circuitry operating in the receive mode configuration to control said first and second circuitry to modulate said optoelectronic thyristor device between a non-lasing OFF state and a non-lasing ON state in accordance with the input digital optical electrical signal injected into said resonant cavity to thereby produce the output digital electrical data signal.

34. An optical transceiver module according to claim 29 , wherein:

said resonant cavity is adapted for vertical emission and injection of light.

35. An optical transceiver module according to claim 29 , wherein:

said resonant cavity is adapted for in-plane emission and injection of light.

36. An optical transceiver module according to claim 35 , wherein:

said integrated circuit includes a passive waveguide device that guides light to and from said resonant cavity, said passive waveguide integrally formed with said optoelectronic thyristor device on said substrate.

37. An optical transceiver module according to claim 29 , wherein:

said transmission medium comprises an optical fiber.

38. An optical transceiver module according to claim 29 , wherein:

said transmission medium comprises free-space.