Power optimization for operation of optoelectronic device with thermoelectric cooler
View Patent ↗A system and method of minimizing the amount of power that is used by an optoelectronic module is disclosed. The system uses a thermoelectric cooler (TEC) to maintain a case temperature of the module at about 50° C. This allows the TEC to operate in the much more efficient heating mode, thus minimizing the amount of current being used to maintain the module temperature. The method includes the steps of determining a temperature range and operating temperature for an optoelectronic module, such that a maximum current level is not exceeded. In one exemplary embodiment, an operating temperature of about 50° C. with a temperature range of from about −5° C. to about 75° C. allows a maximum current of about 300 mA.
1. An optoelectronic device comprising:
a casing;
a laser assembly disposed within said casing;
a temperature control device communicating with said laser assembly, said temperature control device operating in either a cooling mode or a heating mode; and
a processor having microcode that, when executed, causes the processor to at least indirectly control the operating temperature of a laser diode included in the laser assembly so as to maintain current draw of the laser assembly within a predetermined range.
2. The optoelectronic device of claim 1 , wherein said laser assembly comprises a Dense Wavelength Division Multiplexed Gigabit Interface Converter (DWDM GBIC) transceiver module.
3. The optoelectronic device of claim 2 , wherein said DWDM GBIC is an XFP module.
4. The optoelectronic device of claim 1 , wherein said casing temperature is maintained in a range from about 45° C. to about 80° C.
5. The optoelectronic device of claim 1 , wherein said optoelectronic device draws less than about 400 mA of current when said casing temperature is about 85° C.
6. The optoelectronic device of claim 1 , wherein a maximum current flow is less than 300 mA when said casing temperature is in a range from about 0° C. to about 75° C.
7. An optoelectronic device comprising:
a casing adapted to mount to a communication panel;
a laser assembly disposed within said casing and capable of drawing current from said communication panel;
a temperature control device communicating with said laser assembly; said temperature control device controlling a temperature of said casing; and
means for setting an optimized temperature of a laser diode of the laser assembly based upon a predetermined maximum current draw for the laser assembly, the optimized temperature being selected so as to prevent the current draw for the laser assembly to exceed the predetermined maximum current draw.
8. The optoelectronic device of claim 7 , wherein said laser assembly comprises a Dense Wavelength Division Multiplexed Gigabit Interface Converter (DWDM GBIC) transceiver module.
9. The optoelectronic device of claim 8 , wherein said DWDM GBIC is an XFP module.
10. The optoelectronic device of claim 7 , wherein said casing temperature is maintained in a range from about 45° 0 C. to about 80° C.
11. The optoelectronic device of claim 7 , wherein, when said casing temperature is about 85° C., said optoelectronic device draws less than about 400 mA of current.
12. The optoelectronic device of claim 7 , wherein a maximum current flow does not exceed 300 mA when said casing temperature is in a range from about 0° C. to about 75° C.
13. A method for balancing the current drawn by a laser over a range of operating temperatures for the laser, said method comprising the steps of:
determining a maximum current draw for a laser over an operating laser temperature range; and
determining an optimized temperature for the laser based upon the operating laser temperature range, the optimized temperature being selected so that when the operating laser temperature is increased to a maximum temperature of the temperature range the laser draws less than said maximum current, and, when said laser operating temperature is decreased to a minimum temperature for the operating laser temperature range the laser draws less than said maximum current.
14. The method of claim 13 , wherein said laser operating temperature is maintained in C range from about −5° C. to about 80° C.
15. The method of claim 13 , wherein said module draws less than about 400 mA of cut-rent when said laser operating temperature is about 85° C.
16. The method of claim 13 , wherein a maximum current draw is less than 300 mA when said laser operating temperature is in a range from about −5° C. to about 75° C.
17. The method of claim 13 , wherein said temperature range is from about −5° C. to about 75° C.
18. The method of claim 17 , wherein said optimized temperature is about 50° C.
19. The method of claim 13 , wherein said laser is part of a transceiver module.
20. The method of claim 19 , wherein said transceiver module is an XFP module.
21. The method of claim 19 , wherein said transceiver module is a dense wavelength division multiplexing gigabit interface converter (DWDM GBIC).
22. The method of claim 21 , wherein said DWDM GBIC is an XFP module.
23. The optoelectronic device of claim 1 , wherein the processor is further configured to limit the amount of time the temperature control device is in the cooling mode.
24. The optoelectronic device of claim 7 , wherein the means for setting is a microprocessor in communication with the laser assembly and disposed within the casing.