DBR using the combination of II-VI and III-V materials for the application to 1.3-1.55 mum
A VCSEL includes a substrate; a first mirror stack over the substrate; an active region having a plurality of quantum wells over the first mirror stack; and a second mirror stack over the active region, wherein either or both of the first and second mirror stacks include alternating layers of II-VI and III-V compounds, and wherein said II-VI compound is selected from the group consisting of ZnCdSe, ZnSeTe and ZnMgSe, and said III-V compound is selected from the group consisting of InGaAsP, InAlGaAs and InP. Such a mirror stack is especially useful for a long-wavelength VCSEL.
1 . A vertical cavity surface emitting laser, comprising:
a substrate;
a first mirror stack over the substrate;
an active region having a plurality of quantum wells over the first mirror stack; and
a second mirror stack over the active region,
wherein either or both of the first and second mirror stacks include alternating layers of II-VI and III-V compounds, and wherein said II-VI compound is selected from the group consisting of ZnCdSe, ZnSeTe and ZnMgSe, and said III-V compound is selected from the group consisting of InGaAsP, InAlGaAs and InP.
2 . A vertical cavity surface emitting laser according to claim 1 , further including a current confinement structure over the active region.
3 . A vertical cavity surface emitting laser according to claim 2 , wherein the current confinement structure includes an insulating region and a conductive annular center.
4 . A vertical cavity surface emitting laser according to claim 2 , further including a tunnel junction over the current confinement structure.
5 . A vertical cavity surface emitting laser according to claim 1 , wherein the alternating layers of II-VI and III-V compounds are grown by a MOCVD method using hydride sources like TBA and TBP at a temperature less than 600° C.
6 . A vertical cavity surface emitting laser according to claim 1 , wherein the alternating layers of II-VI and III-V compounds are grown by a MBE method.
7 . A vertical cavity surface emitting laser according to claim 4 , wherein the first and second mirror stacks are an n-type DBR.
8 . A vertical cavity surface emitting laser according to claim 7 , wherein the active region includes one of InGaAsP, AlInGaAs, and InP.
9 . A long-wavelength VCSEL, comprising:
an indium-based semiconductor alloy substrate;
a first mirror stack over the substrate;
an active region having a plurality of quantum wells over the first mirror stack; and
a second mirror stack over the active region,
wherein either or both of the first and second mirror stacks include alternating layers of II-VI and III-V compounds, and wherein said II-VI compound is selected from the group consisting of ZnCdSe, ZnSeTe and ZnMgSe, and said III-V compound is selected from the group consisting of InGaAsP, InAlGaAs and InP.
10 . A long-wavelength VCSEL according to claim 9 , further including a current confinement structure over the active region.
11 . A long-wavelength VCSEL according to claim 10 , wherein the current confinement structure includes an insulating region and a conductive annular center.
12 . A long-wavelength VCSEL according to claim 10 , further including a tunnel junction over the current confinement structure.
13 . A long-wavelength VCSEL according to claim 9 , wherein the alternating layers of II-VI and III-V compounds are grown by a MOCVD method using hydride sources like TBA and TBP at a temperature less than 600° C.
14 . A long-wavelength VCSEL according to claim 9 , wherein the alternating layers of II-VI and III-V compounds are grown by a MBE method.
15 . A long-wavelength VCSEL according to claim 12 , wherein the first and second mirror stacks are an n-type DBR.
16 . A long-wavelength VCSEL according to claim 15 , wherein the active region includes one of InGaAsP, AlInGaAs, and InP.
17 . A vertical cavity surface emitting laser, comprising:
a substrate;
a first mirror stack over the substrate having a plurality of distributed Bragg reflector layers, the distributed Bragg reflector layers including a plurality of first layers that alternate with a plurality of second layers, wherein the plurality of first layers is a II-VI compound and the plurality of second layers is a III-V compound;
an active region having a plurality of quantum wells; and
a second mirror stack over the active region, the second mirror stack having a plurality of distributed Bragg reflector layers, the distributed Bragg reflector layers including a plurality of first layers that alternate with a plurality of second layers, wherein the plurality of first layers is a II-VI compound and the plurality of second layers is a III-V compound.
18 . A vertical cavity surface emitting laser according to claim 17 , wherein the II-V compound of the plurality of first layers in the first mirror stack and in the second mirror stack is one of ZnCdSe, ZnSeTe, and AnMgSe.
19 . A vertical cavity surface emitting laser according to claim 17 , wherein the III-V compound of the second plurality of layers of the first mirror stack and in the second mirror stack is one of InGaAsP, InAlGaAs, and InP.
20 . A vertical cavity surface emitting laser according to claim 17 , wherein the first mirror stack includes less than 40 Bragg reflector layers and wherein the second mirror stack includes less than 40 Bragg reflector layers.
21 . A vertical cavity surface emitting laser according to claim 20 , wherein light having a wavelength greater than 1.3 μm is reflected between the first mirror stack and the second mirror stack.