PCMO thin film with resistance random access memory (RRAM) characteristics
View Patent ↗PrCaMnO (PCMO) thin films with predetermined memory-resistance characteristics and associated formation processes have been provided. In one aspect the method comprises: forming a Pr 3+ 1−x Ca 2+ x MnO thin film composition, where 0.1<x<0.6; in response to the selection of x, varying the ratio of Mn and O ions as follows: O 2− (3±20%); Mn 3+ ((1−x)±20%); and, Mn 4+ (x±20%). When the PCMO thin film has a Pr 3+ 0.70 Ca 2+ 0.30 Mn 3+ 0.78 Mn 4+ 0.22 O 2− 2.96 composition, the ratio of Mn and O ions varies as follows: O 2− (2.96); Mn 3+ ((1−x)+8%); and, Mn 4+ (x−8%). In another aspect, the method creates a density in the PCMO film, responsive to the crystallographic orientation. For example, if the PCMO film has a (110) orientation, a density is created in the range of 5 to 6.76 Mn atoms per 100 Å 2 in a plane perpendicular to the (110) orientation.
1. A method for forming a PrCaMnO (PCMO) thin film with predetermined memory-resistance characteristics, the method comprising:
forming a Pr 3+ 1−x Ca 2+ x MnO thin film composition, where 0.1<x<0.6;
in response to the selection of x, varying the ratio of Mn and O ions as follows:
O 2− (3±20%);
Mn 3+ ((1−x)±20%); and,
Mn 4+ (x±20%).
2. The method of claim 1 wherein forming a PCMO thin film with a composition includes forming a PCMO thin film with a Pr 3+ 0.70 Ca 2+ 0.30 Mn 3+ 0.78 Mn 4+ 0.22 O 2− 2.96 composition;
wherein varying the ratio of Mn and O ions includes varying the ions as follows:
O 2− (2.96);
Mn 3+ ((1−x)+8%); and,
Mn 4+ (x−8%).
3. The method of claim 2 further comprising:
forming a 13.3% oxygen vacancy in the PCMO film.
4. A PrCaMnO (PCMO) thin film with predetermined memory-resistance characteristics, the PCMO thin film comprising:
a Pr 3+ 1−x Ca 2+ x MnO composition, where 0.1<x<0.6; and,
a ratio of Mn and O ions as follows:
O 2− (3±20%);
Mn 3+ ((1−x)±20%); and,
Mn 4+ (x±20%).
5. The PCMO thin film of claim 4 wherein the composition is Pr 3+ 0.70 Ca 2+ 0.30 Mn 3+ 0.78 Mn 4+ 0.22 O 2− 2.96 ; and,
wherein the ratio of Mn and O ions is as follows:
O 2− (2.96);
Mn 3+ ((1−x)+8%); and,
Mn 4+ (x−8%).
6. The PCMO thin film of claim 5 further comprising a 13.3% oxygen vacancy.