High milling resistance write pole fabrication method for perpendicular recording

1. A method for manufacturing a magnetic structure of a write head,

comprising:

forming a magnetic layer;

depositing a first hard mask, the first hard mask comprising alumina;

depositing a second hard mask on said first hard mask, the second hard mask comprising Ti;

forming a photoresist mask on said second hard mask;

performing a first material removal process to remove portions of said second hard mask not covered by said photoresist mask;

performing a second material removal process to remove portions of said first hard mask not covered by said second hard mask and said photoresist mask; and

performing a third material removal process to remove portions of said magnetic material not covered by said first and second hard masks, thereby manufacturing the magnetic structure of a write head.

2. A method as in claim 1 , wherein said second hard mask layer is more readily removed by said first material removal process than said photoresist mask is.

3. A method as in claim 1 , wherein said first hard mask is more readily removed by said second material removal process than said second hard mask is

4. A method as in claim 1 wherein said magnetic material comprises CoFe.

5. A method as in claim 1 wherein said second material removal process comprises a reactive ion etch performed in an atmosphere comprising O 2 .

6. A method as in claim 1 wherein said second material removal process comprises a reactive ion etch performed in an atmosphere comprising CO 2 .

7. A method as in claim 1 wherein said second material removal

process comprises a reactive ion etch performed in an atmosphere comprising O 2 .

8. A method as in claim 1 wherein said first hard mask is deposited thicker than said second hard mask.

9. A method as in claim 1 further comprising after forming said magnetic layer and before depositing said first hard mask, depositing a layer comprising diamond like carbon.

10. A method as in claim 1 further comprising, lifting off said photoresist mask using hot NMP.

11. A method as in claim 1 further comprising performing a chemicalmechanical polishing process.

12. A method as in claim 1 wherein said third material removal process comprises ion milling.

13. A method as in claim 1 , further comprising, performing a fourth material removal process at an angle to a normal to said magnetic layer to form said magnetic layer with a trapezoidal cross section.

14. A method as in claim 13 wherein said fourth material removal process comprises ion milling performed at an angle of less than 90 degrees with respect to a normal to a surface of said magnetic layer.

15. A method as in claim 13 wherein said third and fourth material removal processes comprise a common material removal process performed at varying angles.

16. A method for manufacturing a magnetic structure of a write head,

comprising:

forming a magnetic layer;

depositing a first hard mask;

depositing a second hard mask on said first hard mask;

forming a photoresist mask on said second hard mask;

performing a first material removal process to remove portions of said second hard mask not covered by said photoresist mask;

performing a second material removal process to remove portions of said first hard mask not covered by said second hard mask and said photoresist mask; and

performing a third material removal process to remove portions of said magnetic material not covered by said first and second hard masks, thereby manufacturing the magnetic structure of a write head;

wherein said first hard mask comprises a soluble polyimide film and said second hard mask comprises SiO 2 .

17. A method for manufacturing a magnetic structure of a write head,

comprising:

forming a magnetic layer;

depositing a first hard mask;

depositing a second hard mask on said first hard mask;

forming a photoresist mask on said second hard mask;

performing a first material removal process to remove portions of said second hard mask not covered by said photoresist mask;

performing a second material removal process to remove portions of said first hard mask not covered by said second hard mask and said photoresist mask; and

performing a third material removal process to remove portions of said magnetic material not covered by said first and second hard masks, thereby manufacturing the magnetic structure of a write head;

wherein said first material removal process comprises a reactive ion etch performed in an atmosphere comprising Fluorine.

18. A method for manufacturing a magnetic structure of a write head,

comprising:

forming a magnetic layer;

depositing a first hard mask;

depositing a second hard mask on said first hard mask;

forming a photoresist mask on said second hard mask;

performing a first material removal process to remove portions of said second hard mask not covered by said photoresist mask;

performing a second material removal process to remove portions of said first hard mask not covered by said second hard mask and said photoresist mask; and

performing a third material removal process to remove portions of said magnetic material not covered by said first and second hard masks, thereby

manufacturing the magnetic structure of a write head;

wherein said first material removal process comprises reactive ion etching performed in an atmosphere comprising CF 4 .

19. A method for manufacturing a magnetic structure of a write head,

comprising:

forming a magnetic layer;

depositing a first hard mask;

depositing a second hard mask on said first hard mask;

forming a photoresist mask on said second hard mask;

performing a first material removal process to remove portions of said second hard mask not covered by said photoresist mask;

performing a second material removal process to remove portions of said first hard mask not covered by said second hard mask and said photoresist mask; and

performing a third material removal process to remove portions of said magnetic material not covered by said first and second hard masks, thereby

manufacturing the magnetic structure of a write head;

wherein said first material removal process comprises reactive ion etching performed in an atmosphere comprising CF 3 .