IP Library › Granted Patent US 7,091,601
Granted Patent B2
US 7,091,601 · App. 10/837,261 · Granted Aug 15, 2006

Method of fabricating an apparatus including a sealed cavity

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Quick Facts
Patent No.
US 7,091,601
App. No.
10/837,261
Granted
Aug 15, 2006
Kind
B2
Abstract

A method of fabricating an apparatus including a sealed cavity and an apparatus embodying the method is disclosed. To fabricate the apparatus, a device chip including a substrate and at least one circuit element on the substrate is fabricated. Also, a cap is fabricated. The cap is attached to the device chip using single phase metal alloy to achieve sealed cavity over the circuit element. The single phase metal alloy allows the cap to be diffusion bonded to the device chip at a higher diffusivity thus allowing diffusion at a lower temperature, lower pressure, shorter period, or a combination of these.

Claims (21)

1. A method of manufacturing an apparatus, the method comprising:

fabricating a device chip including a substrate and at least one circuit element fabricated on the substrate;

fabricating a cap;

applying a pure base metal on the device chip;

applying a single phase metal alloy of the base metal on the cap;

aligning the pure base metal of the device chip and the single phase metal alloy of the base metal of the cap; and

diffusing bonding the cap onto the device chip whereby sealed cavity over the circuit element results.

2. The method recited in claim 1 wherein the cap further comprises a gasket.

3. The method recited in claim 1 wherein the single phase metal alloy includes gold solid solution comprising gold and a metal selected from a group consisting of silver, aluminum, mercury, copper, zinc, tin, silicon.

4. A method of manufacturing an apparatus, the method comprising:

fabricating a device chip including a substrate, at least one circuit element fabricated on the substrate, and at least one of single phase metal alloy and pure base metal surrounding the circuit element;

fabricating a cap including at least one of single phase metal alloy having same composition as the single phase alloy of the device chip and pure base metal having same composition as the pure base metal of the device chip; and

attaching the cap onto the device chip by diffusion bonding.

5. The method recited in claim 4 wherein the single phase metal alloy includes gold solid solution comprising gold and a metal selected from a group consisting of silver, aluminum, mercury, copper, zinc, tin, and silicon.

6. The method recited in claim 4 wherein the cap further comprises a gasket.

7. The method recited in claim 4 wherein the base metal is gold.

8. A method of manufacturing an apparatus, the method comprising:

fabricating a device chip including a substrate and at least one circuit element fabricated on the substrate;

fabricating a cap including a pure base metal having a layer of an alloy metal; and

diffusing bonding the cap onto the device chip whereby a single phase solid solution is formed by the base metal and the alloy metal.

9. The method recited in claim 8 wherein the single phase metal alloy includes gold solid solution comprising gold and a metal selected from a group consisting of silver, aluminum, mercury, copper, zinc, tin, and silicon.