Substrate processing apparatus
View Patent ↗The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a process liquid mist by mixing a liquid and a pressurized gas, to discharge the process liquid mist to a substrate at high speeds. The liquid may be remover liquid, intermediate rinse liquid or deionized water. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the mist, whereby the quality of the process is improved.
1. An apparatus for removing reaction products generated on a substrate, the substrate having been subjected to a dry-etching process, the dry-etching process using a resist film as a mask to dry-etch a thin film formed on a surface of the substrate, said apparatus comprising:
a) a spin mechanism for holding and rotating said substrate;
b) a deionized water supply unit for supplying deionized water onto said substrate being rotated and having:
b-1) a deionized water discharging unit for discharging deionized water onto said substrate being rotated; and
b-2) a first driving unit for moving said deionized water discharging unit to scan said substrate with said deionized water;
c) a remover liquid supply unit for supplying remover liquid whose temperature is adjusted to become higher than the room temperature onto said substrate being rotated to remove said residuary pollution and having:
c-1) a remover liquid discharging unit for discharging said remover liquid onto said substrate being rotated;
c-2) a second driving unit for moving said remover liquid discharging unit to scan said substrate with said remover liquid; and
c-3) a first temperature controller for controlling a temperature of said remover liquid; and
d) a controller configured to:
i) move a reach point of said remover liquid whose temperature is higher than the room temperature on a substrate along a path connecting a rotation center of said substrate and a rotation circle defined by an edge of the substrate being rotated by moving said remover liquid discharging unit by said second driving unit and by rotating said substrate by said spin mechanism,
ii) spin off remover liquid on said substrate by rotating said substrate by said spin mechanism after supplying remover liquid, and
iii) move a reach point of said deionized water on a substrate along a path connecting a rotation center of said substrate and a rotation circle defined by an edge of the substrate being rotated by moving said deionized water discharging unit by said first driving unit and by rotating said substrate by said spin mechanism after spinning off the remover liquid.
2. The apparatus in accordance with claim 1 , wherein
said path is an arc connecting said rotation center of said substrate and said rotation circle.
3. The apparatus in accordance with claim 1 , wherein
said remover liquid supply unit further comprises:
a transmission mechanism for transmitting said remover liquid whose temperature is controlled to said substrate.
4. The apparatus in accordance with claim 1 , further comprising:
ultrasonic wave is applied to said remover liquid.
5. The apparatus in accordance with claim 4 , wherein
said ultrasonic wave is applied to said remover liquid before said remover liquid is applied onto said substrate.
6. The apparatus in accordance with claim 5 , wherein
said remover liquid discharging unit comprises an ultrasonic oscillator contacting said remover liquid to apply said ultrasonic wave to said remover liquid.
7. The apparatus in accordance with claim 4 , wherein
said ultrasonic wave is applied directly to said remover liquid supplied onto and remaining on said substrate.
8. The apparatus in accordance with claim 1 , wherein
said path is a line connecting said rotation center and two points on said rotation circle.
9. The apparatus in accordance with claim 1 , wherein said deionized water supply unit further comprises:
a second temperature adjusting part corresponding to a first temperature adjusting part for controlling a temperature of said deionized water, wherein
said controller is configured to move a reach point of said deionized water whose temperature is higher than the room temperature on a substrate along a path connecting a rotation center of said substrate and a rotation circle defined by an edge of the substrate being rotated by moving said deionized water discharging unit by said first driving unit and by rotating said substrate by said spin mechanism after spinning off the remover liquid.
10. The apparatus in accordance with claim 1 , wherein said substrate has a metal thin film.
11. A method for removing residuary pollution caused in a dry-etching process from a substrate, said method comprising the steps of:
(a) discharging said remover liquid from said remover liquid discharging unit while moving a remover liquid discharging unit by a first driving unit and rotating said substrate held by a spin mechanism to move a reach point of said remover liquid whose temperature is higher than the room temperature on a substrate along a path connecting a rotation center of said substrate and a rotation circle defined by an edge of said substrate being rotated;
(b) spinning off remover liquid on said substrate by rotating said substrate by said spin mechanism after supplying remover liquid by said step (a); and
(c) discharging a deionized water from said deionized water discharging unit while moving a deionized water discharging unit by a second driving unit and rotating said substrate held by said spin mechanism to move a reach point of said deionized water on a substrate along a path connecting a rotation center of said substrate and a rotation circle defined by an edge of said substrate being rotated after spinning off remover liquid by said step (b).
12. The method in accordance with claim 11 , wherein
said path is an arc connecting said rotation center of said substrate and said rotation circle.
13. The method in accordance with claim 11 , wherein
temperature of said remover liquid discharged by said step (a) is controlled.
14. The method in accordance with claim 11 , wherein
ultrasonic wave is applied to said remover liquid discharged by said step (a).
15. The method in accordance with claim 14 , wherein
said ultrasonic wave is applied to said remover liquid before said remover liquid is applied onto said substrate.
16. The method in accordance with claim 15 , wherein
said remover liquid discharging unit comprises an ultrasonic oscillator contacting said remover liquid to apply said ultrasonic wave to said remover liquid.
17. The method in accordance with claim 14 , wherein
said ultrasonic wave is applied directly to said remover liquid supplied onto and remaining on said substrate.
18. The method in accordance with claim 11 , wherein
said path is a line connecting said rotation center and two points on said rotation circle.
19. The method in accordance with claim 11 , wherein
temperature of said deionized water discharged by said step (c) is higher than the room temperature.