Programmable memory devices supported by semiconductor substrates
View Patent ↗The invention includes a memory device supported by a semiconductor substrate and comprising in ascending order from the substrate: a floating gate, a dielectric material, a layer consisting essentially of tungsten nitride, a first mass consisting essentially of tungsten, and a second mass consisting essentially of one or more nitride compounds. The invention includes a memory device having a floating gate and a dielectric material over the floating gate. The device has a mass consisting essentially of tungsten over the dielectric material, with the mass having a pair of opposing sidewalls. A pair of sidewall spacers are along the opposing sidewalls of the mass. The sidewall spacers comprise a first layer consisting essentially of one or more nitride compounds and a second layer different from the first layer. The invention includes methods of making memory devices.
1. A programmable memory device supported by a semiconductor substrate and comprising:
a floating gate over the substrate;
a dielectric material over the floating gate;
a mass consisting essentially of W over the dielectric material; the mass comprising a pair of opposing sidewalls; and
a pair of sidewall spacers along the opposing sidewalls of the mass; the sidewall spacers comprising a first layer consisting essentially of one or more nitride compounds and a second layer different from the first layer, wherein the second layer consists essentially of silicon.
2. The device of claim 1 wherein the programmable memory device is a flash device.
3. The device of claim 1 wherein the first layer of the sidewall spacers is physically against the mass.
4. The device of claim 1 wherein the first layer of the sidewall spacers consists essentially of silicon nitride.
5. The device of claim 1 wherein:
the first layer of the sidewall spacers is physically against the mass; and
the first layer of the sidewall spacers consists essentially of silicon nitride.
6. The device of claim 1 wherein:
the first layer of the sidewall spacers is physically against the sidewalls of the mass;
the second layer of the sidewall spacers is laterally outward of the first layer; and
the sidewall spacers comprise a third layer laterally outward of the second layer and comprising silicon nitride.
7. The device of claim 6 wherein the first layer of the sidewall spacers consists essentially of tungsten nitride.
8. The device of claim 6 wherein the first layer of the sidewall spacers consists essentially of silicon nitride.
9. A programmable memory device supported by a semiconductor substrate and comprising:
a floating gate over the substrate;
a dielectric material over the floating gate;
a first layer consisting essentially of W k over the dielectric material;
a mass consisting essentially of W over the first layer;
a second layer consisting essentially of one or more nitride compounds over the mass; the mass first layer and second layer being comprised by a stack having a pair of opposing sidewalls; and
a pair of sidewall spacers along and physically against the opposing sidewalls of the stack, the sidewall spacers comprising a first portion consisting essentially of one or more nitride compounds and a second portion different from the first portion, wherein the second portion consists essentially of silicon.
10. The device of claim 9 wherein the programmable memory device is a flash device.
11. The device of claim 9 wherein the second layer is physically against the mass.
12. The device of claim 9 wherein the second layer consists essentialiy of silicon nitride.
13. The device of claim 9 wherein:
the first portions of the sidewall spacers are physically against the mass; and
the second portions of the sidewall spacers are spaced from the mass by the first poritons of the sidewall spacers.
14. The device of claim 9 wherein the first portions of the sidewall spacers consist essentially of silicon nitride.
15. The device of claim 9 wherein:
the first portions of the sidewall spacers are physically against the mass;
the second portions of the sidewall spacers are spaced from the mass by the first portions of the sidewall spacers; and
the first portions of the sidewall spacers consist essentially of silicon nitride.
16. The device of claim 9 wherein:
the first portions of the sidewall spacers are physically against the mass;
the second portions of the sidewall spacers are spaced from the mass by the first portions of the sidewall spacers; and
the first portions of the sidewall spacers consist essentially of tungsten nitride.