Organic light-emitting device employing doped hole transporting layer and/or hole injecting layer

1. An organic light-emitting device comprising:

an anode;

a cathode;

an emission layer interposed between the anode and the cathode; and

a hole injecting layer interposed between the anode and the emission layer;

wherein the hole injecting layer comprises:

a host material to function as an electron donor, and

a dopant material to function as an electron acceptor;

wherein the dopant material has an electron affinity greater than that of the host material by at least 0.1 eV; and

wherein a concentration of the electron acceptor doped into the hole injecting layer decreases with a decreasing distance from the emission layer.

2. The organic light-emitting device according to claim 1 , wherein the electron acceptor comprises at least one functional group selected from a group consisting of a nitro group (—NO 2 ), a cyano group (—CN), a sulfonyl group (—SO 2 ), a sulfoxide group (—SO 3 ), a carbonyl group (—CO), a carboxyl group (—CO 2 ), an ester group (—COO), an anhydride group, an imide group, an imine group, a halogen group, a fluoroalkyl group, and a fluoroaromatic group.

3. The organic light-emitting device according to claim 1 , wherein the electron acceptor is one selected from a group consisting of an aromatic family, an olefin family, an aromatic-olefin conjugate family, an aromatic-aromatic conjugate family, a fused aromatic family, and a heterocyclic compound family.

4. The organic light-emitting device according to claim 1 , wherein the electron acceptor constitutes 0.01 to 50 wt % of the hole injecting layer.

5. The organic light-emitting device according to claim 4 , wherein the electron acceptor constitutes 0.01 to 10 wt % of the hole injecting layer.

6. The organic light-emitting device according to claim 1 , further comprising at least one layer selected from a group consisting of a hole blocking layer, an electron transporting layer, and an electron injecting layer;

wherein the at least one layer selected from the group is interposed between the emission layer and the cathode.

7. The organic light-emitting device according to claim 1 , wherein the hole injecting layer is formed using a solution process or a vacuum deposition technique.

8. The organic light-emitting device according to claim 1 , wherein the host material of the hole injecting layer comprises at least one low molecular material selected from a group consisting of an aryl amine family and a starburst family.

9. The organic light-emitting device according to claim 1 , wherein the host material of the hole injecting layer comprises N,N′-bis(naphthalen-1-yl)-N,N′-bis(phenyl)benzidine.

10. The organic light-emitting device according to claim 1 , wherein the host material of the hole injecting layer comprises one selected from a group consisting of 4,4′,4″-tri(N-carbazoyl)triphenylamine, 4,4′,4″-tris(N-3-methyl phenyl-N-phenyl-amino)-triphenylamine, and 1,3,5-tris-(N,N-bis-(4-methoxy-phenyl)-aminophenyl)-benzene.

11. The organic light-emitting device according to claim 1 , wherein the hole injecting layer is formed by vapor-depositing the host material with the electron acceptor at a thickness of hundreds of angstroms.

12. The organic light-emitting device according to claim 1 , wherein the host material of the hole injecting layer comprises at least one high molecular material selected from a group consisting of a TPD based polymer and poly-poly(styrene sulfonic acid).

13. The organic light-emitting device according to claim 12 , wherein the hole injecting layer is formed by blending the host material with the electron acceptor to obtain a blended material, and coating and heat-treating the blended material at a thickness of hundreds of angstroms.

14. The organic light-emitting device according to claim 1 , further comprising a hole transporting layer interposed between the hole injecting layer and the emission layer.

15. The organic light-emitting device according to claim 14 , wherein the hole transporting layer is not doped with an electron acceptor.

16. The organic light-emitting device according to claim 14 , wherein the hole transporting layer comprises:

a host material to function as an electron donor; and

a dopant material to function as an electron acceptor; and

wherein the dopant material of the hole transporting layer has an electron affinity greater than that of the host material of the hole transporting layer by at least 0.1 eV.

17. The organic light-emitting device according to claim 16 , wherein the host material of the hole transporting layer comprises BFE.

18. An organic light-emitting device comprising:

an anode;

a cathode;

an emission layer interposed between the anode and the cathode; and

a hole injecting layer interposed between the anode and the emission layer;

wherein the hole injecting layer comprises:

a host material to function as an electron donor, and

a dopant material to function as an electron acceptor;

wherein the dopant material has an electron affinity greater than that of the host material by at least 0.1 eV; and

wherein the electron acceptor is one selected from a group consisting of 4-nitroaniline, 4-nitrobiphenyl, 4-dimethylamino-4′-nitrostilbene, 1,4-dicyanobenzene, 9,10-dicyanoanthracene, 1,2,4,5-tetracyanobenzene, 3,4,9,10-perylenetetracarboxylic dianhydride, N,N′-bis(2,5-di-t-buytlphenyl)-3,4,9,10-perylenedicarboxylmide, tetrachlorophthalic anhydride, tetrachlorophthalonitrile, anthraquinone, phenanthrenequinone, 1,10-phenanthroline-5,6-dione, phenazine, quinoxaline, and 2,3,6,7-tetrachloroquinoxaline.

19. An organic light-emitting device comprising:

an anode;

a cathode;

an emission layer interposed between the anode and the cathode; and

a hole injecting layer interposed between the anode and the emission layer;

wherein the hole injecting layer comprises:

a host material to function as an electron donor, and

a dopant material to function as an electron acceptor;

wherein the dopant material has an electron affinity greater than that of the host material by at least 0.1 eV; and

wherein the electron acceptor is 9,10-dicyanoanthracene.

20. An organic light-emitting device comprising:

an anode;

a cathode;

an emission layer interposed between the anode and the cathode; and

at least one of a hole injecting layer and a hole transporting layer interposed between the anode and the emission layer;

wherein the at least one of the hole injecting layer and the hole transporting layer comprises:

a host material to function as an electron donor; and

a dopant material to function as an electron acceptor;

wherein the electron donor and the electron acceptor are combined to form an electron donor-acceptor, pair,

wherein the dopant material has an electron affinity greater than that of the host material by at least 0.1 eV; and

wherein only the hole injection layer is doped with the electron acceptor, and the hole transporting layer is not doped with the electron acceptor and a concentration of the electron acceptor doped into the hole injecting layer decreases with a decreasing distance from the emission layer.

21. An organic light-emitting device comprising:

an anode;

a cathode;

an emission layer interposed between the anode and the cathode; and

at least one of a hole injecting layer and a hole transporting layer interposed between the anode and the emission layer;

wherein the at least one of the hole injecting layer and the hole transporting layer comprises:

a host material to function as an electron donor; and

a dopant material to function as an electron acceptor;

wherein the dopant material has an electron affinity greater than that of the host material by at least 0.1 eV; and

wherein a concentration of the electron acceptor doped into the at least one of the hole injecting layer and the hole transporting layer decreases with a decreasing distance from the emission layer.

22. An organic light-emitting device comprising:

an anode;

a cathode;

an emission layer interposed between the anode and the cathode; and

a hole injecting layer interposed between the anode and the emission layer;

wherein the hole injecting layer comprises:

a host material to function as an electron donor, and

a dopant material to function as an electron acceptor;

wherein the dopant material has an electron affinity greater than that of the host material by at least 0.1 eV; and

wherein the host material of the hole injecting layer comprises BFE.

23. An organic light-emitting device comprising:

an anode;

a cathode;

an emission layer interposed between the anode and the cathode;

a hole injecting layer interposed between the anode and the emission layer; and

a hole transporting layer interposed between the hole injecting layer and the emission layer;

wherein the hole injecting layer comprises:

a host material to function as an electron donor, and

a dopant material to function as an electron acceptor;

wherein the dopant material of the hole injecting layer has an electron affinity greater than that of the host material of the hole injecting layer by at least 0.1 eV;

wherein the hole transporting layer comprises:

a host material to function as an electron donor; and

a dopant material to function as an electron acceptor;

wherein the dopant material of the hole transporting layer has an electron affinity greater than that of the host material of the hole transporting layer by at least 0.1 eV; and

wherein a concentration of the electron acceptor doped into the hole transporting layer decreases with a decreasing distance from the emission layer.

24. An organic light-emitting device comprising:

an anode;

a cathode;

an emission layer interposed between the anode and the cathode;

a hole injecting layer interposed between the anode and the emission layer; and

a hole transporting layer interposed between the hole injecting layer and the emission layer;

wherein the hole injecting layer comprises:

a host material to function as an electron donor, and

a dopant material to function as an electron acceptor;

wherein the dopant material of the hole injecting layer has an electron affinity greater than that of the host material of the hole injecting layer by at least 0.1 eV;

wherein the hole transporting layer comprises:

a host material to function as an electron donor; and

a dopant material to function as an electron acceptor;

wherein the dopant material of the hole transporting layer has an electron affinity greater than that of the host material of the hole transporting layer by at least 0.1 eV; and

wherein the electron acceptor doped into the hole transporting layer is 9,10-dicyanoanthracene.