Method for fabricating a thin film magnetic head
View Patent ↗A plating underlayer is formed on an insulating film. An anti-reflection film is formed on the plating underlayer. A photoresist is formed over the antireflection film 62. The photoresist and the antireflection film are exposed and developed to form a resistframe made thereof. A second magnetic layer is formed within an inner pattern enclosed by the resistframe. The anti-reflection film is made of a material soluble for a developer through exposure.
1. A method for fabricating a thin film magnetic head having a recording element with a first magnetic layer, an insulating film, a coil film and a second magnetic layer, wherein said first magnetic layer and said second magnetic layer constitute a thin film magnetic circuit, and said insulating film is disposed between said first magnetic layer and said second magnetic layer and supports said coil film, and said second magnetic layer is disposed on said insulating film, comprising the steps of:
forming a plating underlayer after forming said first magnetic layer, said coil film and said insulating layer and before forming said second magnetic layer,
forming an antireflection film on said plating underlayer,
heating said antireflection film within 80–150° C. after forming said antireflection film and before applying a photoresist,
applying said photoresist over said antireflection film,
exposing said photoresist and said antireflection film,
heating said antireflection film within 80–150° C. after exposing and before developing said photoresist and said antireflection film,
developing said photoresist and said antireflection film to form a resist frame made thereof; and
forming said second magnetic layer within an inner pattern enclosed by said resist frame,
wherein said antireflection film is made of a material soluble for a developer through exposure.
2. The fabricating method as defined in claim 1 , wherein said insulating film includes an inclined portion in an air bearing surface of said thin film magnetic head, and said second magnetic layer is formed on said inclination portion of said insulating film.
3. The fabricating method as defined in claim 1 , further comprising the step of removing said antireflection film and said photoresist after forming said second magnetic layer.
4. The fabricating method as defined in claim 3 , wherein said antireflection film is removed by means of developing.
5. The fabricating method as defined in claim 3 , wherein said antireflection film is removed by means of ashing.
6. The fabricating method as defined in claim 3 , wherein said antireflection film is removed by means of RF ashing.
7. The fabricating method as defined in claim 1 , further comprising the step of exposing said antireflection film after forming said antireflection film and before applying said photoresist.
8. The fabricating method as defined in claim 1 , wherein said photoresist and said antireflection film are exposed by a laser beam with a wavelength of 160–400 nm.
9. The fabricating method as defined in claim 1 , wherein said photoresist is made of chemical sensitive photoresist.
10. The fabricating method as defined in claim 1 , wherein a forefront width of said inner pattern along a track width direction is narrowed to 300 nm or below.
11. The fabricating method as defined in claim 1 , further comprising the step of forming a magnetoresistive effective element.