Film forming method
View Patent ↗CVD is performed without damaging a micro-fabricated semiconductor element. An organic material gas containing amine is used as deposition material gas. The material gas is introduced into a vacuum chamber and ultraviolet light radiated from each of lamps is applied onto an object to be processed that is placed in the chamber, thereby causing chemical vapor deposition to be carried out, whereby a film is grown at a temperature such that no damage is given to a semiconductor element or the like of the object.
1. A method of forming a film, comprising:
introducing an organic gas containing amine into a chamber; and
performing chemical vapor deposition while irradiating the organic gas with an electromagnetic wave having a wavelength which has energy exceeding binding energy existent in molecules in the organic gas,
wherein the chamber is selected with a window defined therein,
the electromagnetic wave is irradiated via the window provided in the chamber, and
the window is held at a predetermined temperature.
2. A method of forming a film, comprising:
introducing an organic gas containing amine into a chamber; and
performing chemical vapor deposition while irradiating the organic gas with an electromagnetic wave having a wavelength which has energy exceeding binding energy existent in molecules in the organic gas,
wherein bis tertial-butylamino silane is selected as the organic gas.
3. A method of forming a film, comprising:
introducing an organic gas containing amine into a chamber; and
performing chemical vapor deposition while irradiating the organic gas with an electromagnetic wave having a wavelength which has energy exceeding binding energy existent in molecules in the organic gas,
wherein hexamethyl-cyclotrisiloxane is selected as the organic gas.
4. A method of forming a film, comprising:
introducing an organic gas containing amine into a chamber;
performing chemical vapor deposition while irradiating the organic gas with an electromagnetic wave having a wavelength which has energy exceeding binding energy existent in molecules in the organic gas; and
irradiating the semiconductor substrate with ultraviolet light prior to introducing the organic gas.
5. A method of forming a film, comprising:
introducing a first organic gas into a chamber;
performing chemical vapor deposition while irradiating the first organic gas with an electromagnetic wave having a wavelength, which has energy exceeding binding energy existent in molecules in the first organic gas;
exhausting the first organic gas;
introducing a second organic gas into the chamber;
performing chemical vapor deposition while irradiating the second organic gas with an electromagnetic wave having a wavelength, which has energy exceeding binding energy existent in molecules in the second organic gas; and
exhausting the second organic gas,
wherein the first organic gas and the second organic gas contain amine respectively.
6. A method according to claim 5 , further comprising irradiating the film formed by the chemical vapor deposition with ultraviolet light.
7. A method according to claim 5 , wherein the chamber is selected with a window defined therein,
the electromagnetic waves are irradiated via the window provided in the chamber, and
the window is held at a predetermined temperature.
8. A method according to claim 5 , wherein bis tertial-butylamino silane is selected as the first organic gas, and hexamethyl-cyclotrisiloxane is selected as the second organic gas.
9. A method according to claim 5 , wherein the chemical vapor deposition is effected on a semiconductor substrate formed with an integrated circuit.
10. A method according to claim 9 , wherein the integrated circuit has wirings or elements made up of aluminum.
11. A method according to claim 5 , further comprising irradiating the semiconductor substrate with ultraviolet light prior to the introduction of the first organic gas.