Reverse circulation protection circuit
View Patent ↗A circuit for protection against reverse circulation of current through the body diode of an FET power switching device switching a load, the power switching device having gate, source and drain terminals, wherein the power switching device is connected in series with the load, the load being connected to the source or drain terminal of the power switching device, the load being capable of providing a voltage across the source and drain terminals sufficient to cause the body diode to conduct, the power switching device being controlled by a driver output stage having a driver output stage body diode, the driver output stage having a substrate set at a substrate voltage level, the reverse circulation protection circuit comprising a circuit for changing the substrate voltage level of the driver output stage so that the voltage across the driver output stage body diode is less than a voltage sufficient to cause the driver output stage body diode to conduct, thereby allowing the power switching device to pass the reverse circulation current and preventing the body diode of the power switching device from conducting.
1. A circuit for protection against reverse circulation of current through the body diode of an FET power switching device switching a load, the power switching device having gate, source and drain terminals, wherein the power switching device is connected in series with the load, the load being connected to the source or drain terminal of the power switching device, the load being capable of providing a voltage across the source and drain terminals sufficient to cause the body diode to conduct, the power switching device being controlled by a driver output stage having a driver output stage body diode, the driver output stage having a substrate set at a substrate voltage level, the reverse circulation protection circuit comprising a circuit for changing the substrate voltage level of the driver output stage so that the voltage across the driver output stage body diode is less than a voltage sufficient to cause the driver output stage body diode to conduct, thereby allowing the power switching device to pass the reverse circulation current and preventing the body diode of the power switching device from conducting.
2. A circuit for protection against reverse circulation of current through the body diode of an FET power switching device switching a load, the power switching device having gate, source and drain terminals, wherein the power switching device is connected in series with the load, the load being connected to the source terminal of the power switching device, the load being capable of providing a voltage on the source terminal greater than the voltage on the drain terminal, the power switching device being controlled by a driver output stage having a driver output stage body diode, the driver output stage having a substrate set at a substrate voltage level, the reverse circulation protection circuit comprising a circuit for reducing the substrate voltage level of the driver output stage so that the voltage across the driver output stage body diode is less than a voltage sufficient to cause the driver output stage body diode to conduct, thereby allowing the power switching device to pass the reverse circulation current and preventing the body diode of the power switching device from conducting.
3. A circuit for protection against reverse circulation of current through the body diode of an FET power switching device switching a load, the power switching device having gate, source and drain terminals, wherein the power switching device is connected in series with the load, the load being connected to the source terminal of the power switching device, the load being capable of providing a voltage on the source terminal greater than the voltage on the drain terminal, the power switching device being controlled by a driver output stage having a driver output stage body diode, the driver output stage having a substrate set at a substrate voltage level, the reverse circulation protection circuit comprising a circuit for reducing the substrate voltage level of the driver output stage so that the voltage across the driver output stage body diode is less than a voltage sufficient to cause the driver output stage body diode to conduct, thereby allowing the power switching device to pass the reverse circulation current and preventing the body diode of the power switching device from conducting,
wherein the reverse circulation protection circuit comprises a current source coupled to a lower potential voltage level comprising a potential less than the drain terminal voltage; and at least one transistor coupled between the drain terminal voltage of the power switching device and said current source, the current source being coupled to the at least one transistor at a common connection, a resistor being coupled between the common connection of said current source and said at least one transistor and the source terminal of the power switching device; a control terminal of the at least one transistor being coupled to the source terminal.
4. The circuit of claim 3 , wherein the at least one transistor comprises a bipolar NPN transistor having its emitter coupled to the current source at the common connection and its collector coupled to the drain terminal voltage, the resistor coupled between the base and the emitter, the base being coupled to the source terminal.
5. The circuit of claim 3 , wherein the lower potential voltage level comprises a potential close to or at ground.
6. The circuit of claim 1 , wherein the substrate voltage level is maintained by the reverse circulation protection circuit at a voltage level that is less than one diode voltage drop above the drain terminal voltage or less.
7. The circuit of claim 3 , wherein the current source sinks adequate current to keep the driver output stage body diode from conducting.
8. The circuit of claim 1 , wherein the reverse circulation protection circuit further comprises a current source coupled to a potential voltage level less than the drain terminal voltage.
9. The circuit of claim 8 , wherein the reverse circulation protection circuit further comprises at least one transistor coupled between a drain terminal voltage of the power switching device and said current source, the at least one transistor having a control terminal coupled to the source terminal, the current source being coupled to the at least one transistor at a common connection.
10. The circuit of claim 9 , wherein the reverse circulation protection circuit further comprises a resistor coupled between the common connection and said at least one transistor.
11. The circuit of claim 8 , wherein the current source sinks adequate current to keep the driver output stage body diode from conducting.
12. The circuit of claim 2 , wherein the reverse circulation protection circuit further comprises a current source coupled to a potential voltage level less than the drain terminal voltage.
13. The circuit of claim 12 , wherein the reverse circulation protection circuit further comprises at least one transistor coupled between the drain terminal voltage of the power switching device and said current source, the at least one transistor having a control terminal coupled to the source terminal, the current source being coupled to the at least one transistor at a common connection.
14. The circuit of claim 13 , wherein the reverse circulation protection circuit further comprises a resistor coupled between the common connection of said current source and said at least one transistor.
15. The circuit of claim 12 , wherein the current source sinks adequate current to keep the driver output stage body diode from conducting.
16. The circuit of claim 1 , further comprising a source for supplying power to the load via the power switching device, wherein the load generates the reverse circulation current.