Monolithic printhead with built-in equipotential network and associated manufacturing method
View Patent ↗An actuating assembly ( 50 ) for ink jet printheads consists of a silicon die ( 61 ), which comprises a groove ( 45 ) and a lamina ( 64 ), and of a structure ( 75 ) produced monolithically in the same production process. The actuating assembly ( 50 ) comprises a microhydraulics ( 63 ), the latter in turn comprising a plurality of channels ( 67 ) and chambers ( 57 ), made inside the structure ( 75 ) by means of a sacrificial metallic layer ( 54 ). A conducting layer ( 26 ) forms a single interconnected equipotential network used as the electrode during the processes of electrochemical etch stopping on the groove ( 45 ), of electrodeposition of the sacrificial layer ( 54 ) and of the latter's subsequent removal.
1. Method for the manufacture of a monolithic actuating assembly for an ink jet printhead, said monolithic actuating assembly being provided with a die, comprising the steps of:
disposing of a wafer comprising a plurality of said dice of semiconductor material, at least one dice comprising a substrate of Silicon P and each dice comprising a plurality of layers;
etching, in said substrate of each of said dice, a first part of a groove;
etching a second part of said groove, in such a way that a lamina made of said plurality of layers is made in each of said dice;
performing a deposition of a plurality of sacrificial layers on each of said laminas;
applying a structural layer on each of said laminas, in such a way that said structural layer covers said plurality of sacrificial layers;
performing a removal of said plurality of sacrificial layers, in such a way that a plurality of chambers and a plurality of ducts are obtained;
wherein said steps of etching a second part of said groove, performing a deposition of a plurality of sacrificial layers on each of said dice and performing a removal of said plurality of sacrificial layers on each of said dice are carried out by way of electrochemical processes using as the electrode a conducting layer, made of an electrically conductive material, which forms a single equipotential network connected on the inside of each of said dice.
2. Method according to claim 1 , wherein said conducting layer forms a single network connected between at least two different said dice.
3. Method according to claim 1 , wherein said step of etching, in said substrate of each of said dice, a first part of a groove is carried out through a dry process.
4. Method according to claim 1 , wherein said steps of etching a first part of said groove and etching a second part of said groove, further comprises the steps of etching a first part of three grooves, or of a different number of grooves, through a dry process and etching a second part of said three grooves, or of a different number of grooves, through a wet process.
5. Method according to claim 1 , wherein said die is made by C-MOS and LD-MOS technology or by N-MOS technology.
6. Method according to claim 1 , wherein said conducting layer assumes an electric working potential by way of at least one point contact.
7. Method according to claim 4 , wherein said at least one point contact is in contact with said conducting layer at a point located on the periphery of said wafer.
8. A method for the manufacture of a monolithic actuating assembly for an ink jet printhead, said monolithic actuating assembly being provided with a die comprising a substrate of silicon P and a plurality of layers, comprising:
a step of depositing a plurality of sacrificial layers on said plurality of layers, wherein said step of deposing a plurality of sacrificial layers is carried out by way of electrochemical processes using as an electrode, a conducting layer made of an electrically conductive material, which forms a single equipotential network connected on the inside of each of said die.
9. A method for the manufacture of a monolithic actuating assembly for an ink jet printhead, said monolithic actuating assembly being provided with a die comprising a substrate of silicon P and a plurality of layers, comprising:
a step of removing a plurality of sacrificial layers made on said plurality of layers, wherein said step of removing a plurality of sacrificial layers is carried out by way of an electrochemical processes using as an electrode, a conducting layer made of an electrically conductive material, which forms a single equipotential network connected on the inside of said die.