IP Library › Patent Application 10846101
Patent Application
App. No. 10/846,101

Method for constructing a magneto-resistive element

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Quick Facts
Patent No.
US None
App. No.
10/846,101
Abstract

A magneto-resistive element is constructed. A ferromagnetic sense layer is deposited on a surface. The ferromagnetic sense layer is patterned. An etch is performed in preparation for depositing a dielectric layer. The dielectric layer is deposited over the sense layer. A ferromagnetic pinned layer is deposited over the dielectric layer.

Claims (44)

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14 . A method for constructing a magneto-resistive element, the method comprising the followings:

(a) depositing a ferromagnetic sense layer on a surface;

(b) forming a dielectric layer over the ferromagnetic sense layer;

(c) patterning the dielectric layer and ferromagnetic sense layer;

(d) forming isolation dielectric regions on sides of the patterned ferromagnetic sense layer;

(e) performing an etch of the dielectric layer; and, (f) depositing a ferromagnetic pinned layer over the patterned dielectric layer and the isolation dielectric regions.

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16 . A magnetic random access memory comprising:

an array of magneto-resistive elements, each magneto-resistive element including:

a patterned ferromagnetic sense layer deposited on a surface;

a dielectric layer deposited over the sense layer; and,

a ferromagnetic pinned layer deposited over the dielectric layer, wherein the ferromagnetic pinned layer is unpatterned.

17 . A magnetic random access memory as in claim 16 wherein each magneto-resistive element additionally includes:

an antiferromagnetic pinning layer deposited over the ferromagnetic pinned layer.

18 . A magnetic random access memory as in claim 16 wherein each magneto-resistive element additionally includes:

an antiferromagnetic pinning layer deposited over the ferromagnetic pinned layer; and,

a protective cap layer deposited over the antiferromagnetic pinning layer.

19 . A magnetic random access memory as in claim 16 wherein the ferromagnetic pinned layer is a synthetic ferrimagnet.

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