Method of crystallizing silicon

1. A method of crystallizing silicon, comprising:

preparing a substrate having an amorphous silicon film formed thereon;

aligning a mask having a first energy region and a second energy region on the amorphous silicon film, wherein the first energy region includes a plurality of transmission patterns and a plurality of interception regions;

irradiating a laser beam through the first and second energy regions of the mask onto a first region of the amorphous silicon film corresponding to the transmission patterns and a second region of the amorphous silicon film corresponding to the second energy regions;

crystallizing the first region of the amorphous silicon film within a completely melting region by the laser beam irradiated through the first energy region of the mask and the second region of the amorphous silicon film within a near completely melting region by the laser beam irradiated through the second energy region of the mask, wherein an energy density of the near complete melting region is between an energy density of a partially melting region and an energy density of the completely melting region;

moving a relative position of the mask by the length of the transmission pattern; and

activating the crystallized first region by irradiating the laser beam through the second energy region to repair a defect of the crystallized first region.

2. The method according to claim 1 , wherein the second energy region includes smaller slits than the transmission patterns.

3. The method according to claim 1 , wherein the laser beam irradiated through the first energy region has a first energy and the laser beam irradiated through the second energy region has a second energy lower than the first energy.

4. The method according to claim 1 , wherein the laser beams irradiated through the first and second energy regions having uniform energy levels.

5. The method according to claim 1 , wherein the second energy region of the mask diffracts the irradiated laser beam.

6. The method according to claim 1 , further comprising moving one of the mask and the substrate to align the mask having the first energy region and the second energy region over a second region of the amorphous silicon film.

7. The method according to claim 1 , wherein the first energy region of the mask includes a plurality of crossing stripe patterns.

8. The method according to claim 7 , wherein the first energy region has a height that is less than or equal to a maximum grain growth length during a irradiating of the laser beam.

9. The method according to claim 1 , wherein the second energy region of the mask is disposed at an end region of the mask with respect to an advancing direction of the mask.