IP Library Granted Patent US 7,026,177
Granted Patent B2
US 7,026,177 · App. 10/847,565 · Granted Apr 11, 2006

Electron multiplier with enhanced ion conversion

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Quick Facts
Patent No.
US 7,026,177
App. No.
10/847,565
Granted
Apr 11, 2006
Kind
B2
Abstract

A replaceable, electronically-isolated, MCP-based spectrometer detector cartridge with enhanced sensitivity is disclosed. A coating on the MCP that enhances the secondary electron emissivity characteristics of the MCP is selected from aluminum oxide (Al 2 O 3 ), magnesium oxide (MgO), tin oxide (SnO 2 ), quartz (SiO 2 ), barium flouride (BaF 2 ), rubidium tin (Rb 3 Sn), berrylium oxide (BeO), diamond and combinations thereof. A mass detector is electro-optically isolated the from a charge collector with a method of detecting a particle including accelerating the particle with a voltage, converting the particle into a multiplicity of electrons and converting the multiplicity of electrons into a multiplicity of photons. The photons then are converted back into electrons which are summed into a charge pulse. A detector also is provided.

Claims (15)

1. A method of converting a charged particle (ion) into a plurality of electrons comprising the steps of:

providing a microchannel plate;

depositing a coating on an input surface of the microchannel plate such that the coating contacts each of a plurality of channels formed in said microchannel plate, said coating being formed of a material that provides enhanced conversion of an ion into electrons by the microchannel plate;

providing an electrical potential across said microchannel plate; and then

accelerating a charged particle toward the input surface of the microchannel plate.

2. A method as set forth in claim 1 wherein the step of depositing the coating comprises the step of depositing a material selected from the group consisting of aluminum oxide (Al 2 O 3 ), magnesium oxide (MgO), tin oxide (SnO 2 ), quartz (SiO 2 ), barium fluoride (BaF 2 ), rubidium tin (Rb 3 Sn), beryllium oxide (BeO), diamond, and combinations thereof as the coating.

3. A method as set forth in claim 1 further comprising the steps of forming a first thin metal electrode on the input surface of said microchannel plate and forming a second thin metal electrode on an output surface of said microchannel plate, said metal electrodes being formed before the step of depositing the coating on the input surface of the micro channel plate.

4. A method as set forth in claim 3 wherein the first and second metal electrodes are formed of an INCONEL brand alloy or a NICHROME brand alloy.

5. A method as set forth in claim 3 wherein the step of forming the first thin metal electrode comprises the step of vacuum depositing the first thin metal electrode on the input surface and the step of forming the second metal electrode comprises the step of vacuum depositing the second thin metal electrode on the output surface.

6. A method as set forth in claim 1 wherein the step of depositing the coating comprises the step of applying the coating such that it extends into each of the plurality of channels formed in said microchannel plate.

7. A method as set forth in claim 6 wherein the step of depositing the coating comprises the step of applying the coating such that it extends into each channel to a depth sufficient to increase a first strike conversion capability to convert an ion to electrons.

8. A method as set forth in claim 1 wherein the step of providing the microchannel plate comprises the steps of:

forming a glass wafer having a plurality of channels extending from a first surface of the glass wafer to an output surface thereof, each of said channels having a channel surface; and

processing the channel surfaces to provide conductive and secondary electron emissive properties.

9. A method as set forth in claim 8 wherein the step of forming the glass wafer comprises the step of forming each of the plurality of channels to extend at an angle relative to a normal flight trajectory of an ion between the input surface and the output surface.

Assignments (9)
RELEASE OF SECURITY INTEREST IN PATENTS AT R/F 058808/0959 Recorded Jun 14, 2024
From: AETHER FINANCIAL SERVICES SAS, AS SECURITY AGENT
To: PHOTONIS SCIENTIFIC, INC.
Reel/Frame 067735/0264 →
SECURITY INTEREST Recorded Jan 28, 2022
From: PHOTONIS SCIENTIFIC, INC.
To: AETHER FINANCIAL SERVICES SAS, AS SECURITY AGENT
Reel/Frame 058808/0959 →
RELEASE OF INTELLECTUAL PROPERTY SECURITY INTERESTS AT R/F 048357/0067 Recorded Jan 27, 2022
From: CREDIT SUISSE AG, CAYMAN ISLANDS BRANCH, AS COLLATERAL AGENT
To: BURLE TECHNOLOGIES, LLC; PHOTONIS DEFENSE, INC.; PHOTONIS SCIENTIFIC, INC.; PHOTONIS FRANCE SAS; PHOTONIS NETHERLANDS, B.V.
Reel/Frame 058887/0384 →
SECURITY INTEREST Recorded Feb 16, 2019
From: BURLE TECHNOLOGIES; PHOTONIS SCIENTIFIC, INC.; PHOTONIS NETHERLANDS B.V.; PHOTONIS FRANCE SAS
To: CREDIT SUISSE, AG, CAYMAN ISLANDS BRANCH, AS COLLATERAL AGENT
Reel/Frame 048357/0067 →
CHANGE OF NAME Recorded Nov 29, 2018
From: PHOTONIS USA, INC.
To: PHOTONIS SCIENTIFIC, INC.
Reel/Frame 047684/0477 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 10, 2018
From: BURLE TECHNOLOGIES, INC.
To: PHOTONIS USA, INC.
Reel/Frame 046305/0730 →
SECURITY AGREEMENT Recorded Sep 20, 2013
From: BURLE TECHNOLOGIES, LLC
To: CREDIT SUISSE AG AS COLLATERAL AGENT
Reel/Frame 031247/0396 →
RELEASE OF SECURITY INTEREST Recorded Sep 18, 2013
From: ING BANK N.V., LONDON BRANCH
To: BURLE TECHNOLOGIES, INC.
Reel/Frame 031235/0941 →
SECURITY AGREEMENT Recorded Mar 20, 2012
From: BURLE TECHNOLOGIES, INC.
To: ING BANK N.V., LONDON BRANCH
Reel/Frame 027891/0405 →