Capacitance-type dynamic-quantity sensor and manufacturing method therefor
View Patent ↗A capacitance-type dynamic-quantity sensor has a silicon substrate having etched recessed upper and lower surface portions forming a weight supported by beam portions and mounted to undergo displacement due to an applied external dynamic quantity such as acceleration or angular velocity. An upper glass substrate is bonded to a part of the upper surface of the silicon substrate and is laminated with a first fixed electrode disposed opposite to and spaced apart from the weight with a first space therebetween formed by the etched recessed upper surface portion of the silicon substrate. A lower glass substrate is bonded to a part of the lower surface of the silicon substrate and is laminated with a second fixed electrode disposed opposite to and spaced apart from the weight with a second space therebetween formed by the etched recessed lower surface portion of the silicon substrate.
1. A capacitance-type dynamic-quantity sensor comprising:
a semiconductor substrate having a weight supported by beams and mounted to undergo displacement due to an applied external dynamic quantity such as acceleration or angular velocity;
an upper substrate having a first main surface, a second main surface opposite to the first main surface, a plurality of through-holes extending through the opposed first and second main surfaces so as to provide the first main surface with a plurality of surface portions lying in a common plane, and a first fixed electrode disposed on one of the surface portions of the first main surface so as to confront the weight with a first gap therebetween, at least one other of the surface portions of the first main surface being connected to a part of a first surface of the semiconductor substrate;
a lower substrate having a first main surface, a second main surface opposite to the first main surface, a plurality of through-holes extending through the opposed first and second main surfaces of the lower substrate so as to provide the first main surface of the lower substrate with a plurality of surface portions lying in a common plane, and a second fixed electrode disposed on one of the surface portions of the first main surface of the lower substrate so as to confront the weight with a second gap therebetween, at least one other of the surface portions of the first main surface of the lower substrate being connected to a part of a second surface of the semiconductor substrate opposite to the first surface thereof;
a conductive material disposed on the second main surface of each of the upper and lower substrates at a location corresponding to the through-holes; and
a wiring disposed in each of the through-holes of the upper and lower substrates and electrically connecting the first and second fixed electrodes with the respective conductive materials.
2. A capacitance-type dynamic-quantity sensor according to claim 1 ; wherein the semiconductor substrate comprises a silicon substrate having a (100) plane orientation.