Semiconductor laser device, semiconductor laser system, optical pickup module and manufacturing for semiconductor laser system
View Patent ↗A semiconductor laser device comprises an n-type cladding layer 103 made of n − type (Al 0.3 Ga 0.7 ) 0.5 In 0.5 P, an undoped active layer 104 and a first p-type cladding layer 105 made of p − type (Al 0.3 Ga 0.7 ) 0.5 In 0.5 P. These layers are successively stacked in bottom-to-top order. The active layer 104 has a multi-quantum well structure composed of a first optical guide layer of undoped Al 0.4 Ga 0.6 As, a layered structure in which well layers of undoped GaAs and barrier layers of undoped Al 0.4 Ga 0.6 As are alternately formed, and a second optical guide layer of undoped Al 0.4 Ga 0.6 As. The first optical guide layer, the layered structure and the second optical guide layer are successively stacked in bottom-to-top order.
1. A semiconductor laser device comprising a cladding layer of a first conductive type, an active layer and a cladding layer of a second conductive type, said layers being stacked on a semiconductor substrate of the first conductive type in bottom-to-top order,
wherein the active layer comprises a layered structure composed of at least one pair of a well layer and a barrier layer, an upper semiconductor layer directly formed on top of the layered structure and having a thickness of 10 nm or more, and a lower semiconductor layer directly formed beneath the layered structure and having a thickness of 10 nm or more,
the cladding layer of the first conductive type and the cladding layer of the second conductive type are made of a material containing phosphorus, and
the at least one pair of the well layer and barrier layer and the lower semiconductor layer are made of a material that contains arsenic but does not substantially contain phosphorus.
2. The semiconductor laser device of claim 1 , wherein the upper semiconductor layer is made of a material that contains arsenic but does not substantially contain phosphorus.
3. The semiconductor laser device of claim 1 , wherein the upper and lower semiconductor layers are optical guide layers.
4. The semiconductor laser device of claim 3 , wherein the band gap of each said optical guide layer is equivalent to or larger than that of the well layer.
5. The semiconductor laser device of claim 3 , wherein the cladding layer of the first conductive type and the cladding layer of the second conductive type are made of (Al x Ga 1−x ) y In 1−y P (where 0≦x≦1 and 0≦y≦1), and the optical guide layers are made of Al x Ga 1−x As (where 0≦x≦1).
6. The semiconductor laser device of claim 5 , wherein the well layer is made of Al x Ga 1−x As (where 0≦x≦1), and the barrier layer is made of Al x Ga 1−x As (where 0≦x≦1).
7. The semiconductor laser device of claim 5 , wherein the well layer is made of Al x Ga 1−x As (where 0≦x≦0.2).
8. The semiconductor laser device of claim 5 , wherein the optical guide layers are made of Al x Ga 1−x As (where 0.4≦x≦1).
9. The semiconductor laser device of claim 3 , wherein the optical guide layers each have a thickness of 10 nm or more.
10. A semiconductor laser system comprising a plurality of semiconductor laser devices for emitting light beams of different wavelengths, said plurality of semiconductor laser devices being formed on a single substrate,
wherein at least one of the plurality of semiconductor laser devices comprises a cladding layer of a first conductive type, an active layer and a cladding layer of a second conductive type, said layers being stacked on a semiconductor substrate of the first conductive type in bottom-to-top order,
the active layer comprises a layered structure composed of at least one pair of a well layer and a barrier layer, an upper semiconductor layer directly fanned on top of the layered structure and having a thickness of 10 nm or more and a lower semiconductor layer directly formed beneath the layered structure and having a thickness of 10 nm or more,
the cladding layer of the first conductive type and the cladding layer of the second conductive type are made of a material containing phosphorus, and
the at least one pair of the well layer and barrier layer and the lower semiconductor layer are made of a material that contains arsenic but does not substantially contain phosphorus.
11. An optical pickup module comprising:
a semiconductor laser device; and
a light receiving unit for receiving light reflected from a recording medium after being emitted from the semiconductor laser device,
wherein the semiconductor laser device comprises a cladding layer of a first conductive type, an active layer and a cladding layer of a second conductive type, said layers being stacked on a semiconductor substrate of the first conductive type in bottom-to-top order, the active layer comprises a layered structure composed of at least one pair of a well layer and a barrier layer, an upper semiconductor layer directly formed on top of the layered structure and having a thickness of 10 nm or more, and a lower semiconductor layer directly formed beneath the layered structure and having a thickness of 10 nm or more,
the cladding layer of the first conductive type and the cladding layer of the second conductive type are made of a material containing phosphorus, and
the at least one pair of the well layer and barrier layer and the lower semiconductor layer are made of a material that contains arsenic but does not substantially contain phosphorus.
12. An optical pickup module comprising:
a semiconductor laser system; and
a light receiving unit for receiving light reflected from a recording medium after being emitted from the semiconductor laser system,
wherein the semiconductor laser system comprises a plurality of semiconductor laser devices for emitting light beams of different wavelengths, said plurality of semiconductor laser devices being formed on a single substrate,
at least one of the plurality of semiconductor laser devices comprises a cladding layer of a first conductive type, an active layer and a cladding layer of a second conductive type, said layers being stacked on a semiconductor substrate of the first conductive type in bottom-to-top order,
the active layer comprises a layered structure composed of at least one pair of a well layer and a barrier layer, an upper semiconductor layer directly formed on top of the layered structure and having a thickness of 10 nm or more, and a lower semiconductor layer directly formed beneath the layered structure and having a thickness of 10 nm or more,
the cladding layer of the first conductive type and the cladding layer of the second conductive type are made of a material containing phosphorus, and
the at least one pair of the well layer and barrier layer and the lower semiconductor layer are made of a material that contains arsenic but does not substantially contain phosphorus.