IP Library Granted Patent US 7,253,087
Granted Patent B2
US 7,253,087 · App. 10/849,890 · Granted Aug 7, 2007

Method of producing thin-film device, electro-optical device, and electronic apparatus

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Quick Facts
Patent No.
US 7,253,087
App. No.
10/849,890
Granted
Aug 7, 2007
Kind
B2
Abstract

The invention provides a transfer technique by which the dimensional precision of a thin-film device is not deteriorated, even if the device is produced by transferring a fine structure or a thin-film circuit layer onto a substrate with an inferior shape-stability. The method includes: forming a fine structure or a thin-film circuit layer on a first substrate using a photolithographic patterning process; shifting the fine structure or the thin-film circuit layer from the first substrate onto a second substrate, or shifting the fine structure or the thin-film circuit layer from the first substrate onto the second substrate via a third substrate; and forming a thin-film pattern on the fine structure or the thin-film circuit layer shifted onto the second substrate by a non-photolithographic method.

Claims (15)

1. A method of manufacturing an active matrix substrate, comprising:

providing a substrate including a wiring on the substrate;

forming a plurality of transistors and a terminal electrically connecting the transistors on the substrate; and

disposing an electroconductive material using a non-photolithographic method such that the electroconductive material connects the wiring to the terminal.

2. The method of manufacturing an active matrix substrate according to claim 1 , the substrate being a soft or flexible substrate.

3. The method of manufacturing an active matrix substrate according to claim 1 , the non-photolithographic method including at least one of a liquid-droplet jetting method, a printing method, a mask-evaporation method, and a bonding method accompanied by positioning process.

4. The method of manufacturing an active matrix substrate according to claim 1 , the substrate being a soft or flexible substrate.

5. The method of manufacturing an active matrix substrate according to claim 1 , the non-photolithographic method being a liquid-droplet jetting method.

6. The method of manufacturing an active matrix substrate according to claim 1 , the non-photolithographic method being a printing method.

7. The method of manufacturing an active matrix substrate according to claim 1 , the non-photolithographic method being a mask-evaporation method.

8. The method of manufacturing an active matrix substrate according to claim 1 , the non-photolithographic method being a bonding method accompanied by positioning process.

9. The method of manufacturing an active matrix substrate according to claim 1 , the electroconductive material being a paste of silver.

10. A method of manufacturing an active matrix substrate, the method comprising:

forming a plurality transistors and a terminal through which a power source voltage is supplied to the plurality of transistors, the plurality of transistors and the terminal being disposed in a circuit area of a base member on which a wiring is formed between the circuit area and an edge or edges constituting an outline of the base member;

forming a connection between the wiring and the terminal by a non-photolithographic method.

Assignments (3)
MERGER Recorded Aug 7, 2012
From: SAMSUNG LED CO., LTD.
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 028744/0272 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 12, 2012
From: SEIKO EPSON CORPORATION
To: SAMSUNG LED CO., LTD.
Reel/Frame 027524/0837 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 1, 2004
From: UTSUNOMIYA, SUMIO
To: SEIKO EPSON CORPORATION
Reel/Frame 015097/0943 →