IP Library Granted Patent US 7,127,145
Granted Patent B2
US 7,127,145 · App. 10/851,910 · Granted Oct 24, 2006

Semiconductor optical amplifier, and optical module using the same

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Quick Facts
Patent No.
US 7,127,145
App. No.
10/851,910
Granted
Oct 24, 2006
Kind
B2
Abstract

The present invention provides a polarization dependency-free, gain-saturated high function semiconductor optical amplifier and optical module at industrially low cost. The gist of the present invention is to structurally separate the optical signal propagating waveguide from another optical waveguide which serves as a lasing optical cavity for optical amplification in such a manner that the two optical waveguides are formed in the same plane but not parallel to each other.

Claims (28)

1. A semiconductor optical amplifier comprising:

a first optical waveguide which propagates an input optical signal;

an optical amplification section for carrying out amplification by causing induction discharge to occur with a resonator structure formed from a direction that, in a plane parallel to the first optical waveguide, intersects the optical propagation direction of the first optical waveguide, the optical amplification section amplifying the optical signal by causing stimulated emission with radiation incident on the first optical waveguide from a direction which is included in a plane parallel to the first optical waveguide and intersects an optical propagating direction of the first optical waveguide, and

a cavity structure formed in a direction which intersects the optical propagating direction of the first optical waveguide,

wherein, without injecting current into the first optical waveguide which propagates the input optical signal, the optical signal is amplified by causing stimulated emission by optically pumping carriers in the first optical waveguide with radiation incident on the first optical waveguide from a direction which is included in a plane parallel to the first optical waveguide and intersects the optical propagating direction of the first optical waveguide.

2. A semiconductor optical amplifier according to claim 1 , wherein any gain medium to amplify light is not provided around an optical input surface of the first optical waveguide which propagates the input optical signal.

3. A semiconductor optical amplifier according to claim 2 , wherein a part or the whole of a gain medium of the first optical waveguide which propagates the input optical signal is used also as a part or the whole of a gain medium of the optical amplification section which amplifies the optical signal.

4. A semiconductor optical amplifier according to claim 3 , wherein:

a photonic crystal is provided along a side of the first optical waveguide which propagates the input optical signal; and

the optical signal is amplified by allowing a cavity structure to cause stimulated emission, said cavity structure being formed in a plane parallel to the first optical waveguide and in the direction which intersects the optical propagating direction of the first optical waveguide.

5. A semiconductor optical amplifier according to claim 2 , wherein:

a photonic crystal is provided along a side of the first optical waveguide which propagates the input optical signal; and

the optical signal is amplified by allowing a cavity structure to cause stimulated emission, said cavity structure being formed in a plane parallel to the first optical waveguide and in the direction which intersects the optical propagating direction of the first optical waveguide.

6. A semiconductor optical amplifier according to claim 2 wherein at least some of a gain medium of the first optical waveguide which propagates the input optical signal is different in composition from a gain medium used in a portion which generates radiation incident on the first optical waveguide.

7. A semiconductor optical amplifier according to claim 1 , wherein a part or the whole of a gain medium of the first optical waveguide which propagates the input optical signal is used also as a part or the whole of a gain medium of the optical amplification section which amplifies the optical signal.

8. A semiconductor optical amplifier according to claim 7 , wherein:

a photonic crystal is provided along each side of the first optical waveguide which propagates the input optical signal; and

the optical signal is amplified by allowing a cavity structure to cause stimulated emission, said cavity structure being formed in a plane parallel to the first optical waveguide and in the direction which intersects the optical propagating direction of the first optical waveguide.

9. A semiconductor optical amplifier according to claim 1 , wherein:

a photonic crystal is provided along a side of the first optical waveguide which propagates the input optical signal; and

the optical signal is amplified by allowing a cavity structure to cause stimulated emission, said cavity structure being formed in a plane parallel to the first optical waveguide and in the direction which intersects the optical propagating direction of the first optical waveguide.

10. A semiconductor optical amplifier according to claim 1 wherein at least some of a gain medium of the first optical waveguide which propagates the input optical signal is different in composition from a gain medium used in a portion which generates radiation incident on the first optical waveguide.

11. A semiconductor optical amplifier according to claim 10 , wherein:

a photonic crystal is provided along a side of the first optical waveguide which propagates the input optical signal; and

the optical signal is amplified by allowing a cavity structure to cause stimulated emission, said cavity structure being formed in a plane parallel to the first optical waveguide and in the direction which intersects the optical propagating direction of the first optical waveguide.

12. A semiconductor optical amplifier according to claim 6 , wherein:

a photonic crystal is provided along a side of the first optical waveguide which propagates the input optical signal; and

the optical signal is amplified by allowing a cavity structure to cause stimulated emission, said cavity structure being formed in a plane parallel to the first optical waveguide and in the direction which intersects the optical propagating direction of the first optical waveguide.

Assignments (3)
CHANGE OF NAME Recorded Dec 3, 2014
From: OPNEXT JAPAN, INC.
To: OCLARO JAPAN, INC.
Reel/Frame 034524/0875 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NAME OF ASSIGNEE PREVIOUSLY RECORDED ON REEL 015799 FRAME 0354. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Feb 12, 2013
From: KAMIYAMA, HIROYUKI; UCHIDA, KENJI; SUMI, SEIJI
To: OPNEXT JAPAN, INC.
Reel/Frame 029801/0118 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 20, 2004
From: KAMIYAMA, HIROYUKI; UCHIDA, KENJI; SUMI, SEIJI
To: OPNEXT, INC.
Reel/Frame 015799/0354 →