Light emitting semiconductor device and photographic illumination apparatus employing same
Light emitting semiconductor device(s) of the present invention is/are provided with three LED elements by way of lead frame(s) on substrate(s) Reflector(s)—having parabolically curved surface(s) at inner wall(s) thereof is/are installed at periphery or peripheries of these LED elements. Radiative angle(s) of light radiating from such reflector(s) is/are controlled by alteration of height(s) of reflector(s). Such height(s) may be lowered to increase radiative angle(s) θ of light therefrom so as to establish broader irradiative locus or loci and/or such height(s) may be raised to decrease radiative angle(s) θ of light radiating therefrom so as to establish narrower irradiative locus or loci.
1. A light emitting semiconductor device comprising:
a plurality of light emitting diode elements; and
one or more reflectors installed peripherally of the plurality of light emitting diode elements and reflecting light therefrom;
wherein the one or more reflectors radiate one or more radiative angles of light, said angles being controlled by adjusting the height of at least a portion of said one or more reflectors.
2. A light emitting semiconductor device according to claim 1 wherein at least a portion of the plurality of light emitting diode elements comprises a white light emitting diode element.
3. A light emitting semiconductor device according to claim 1 wherein the plurality of light emitting diode elements includes one or more light emitting diode elements emitting, respectively, red, green, and blue light.
4. A light emitting semiconductor device according to claim 1 wherein at least one of the reflectors forms at least one inner wall having a parabolic or spherical curvature.
5. A light emitting semiconductor device according to claim 1 wherein at least one of the reflectors is made of two or more reflectors joinable to permit a height adjustment in the reflectors.
6. A photographic illumination apparatus employing at least one light emitting semiconductor device comprising:
a plurality of light emitting diode elements; and
one or more reflectors installed peripherally of the plurality of light emitting diode elements and reflecting light therefrom;
wherein the one or more reflectors radiate one or more radiative angles of light, said angles being controlled by adjusting the height of at least a portion of said one or more reflectors.
7. A photographic illumination apparatus according to claim 6 , wherein at least one of the plurality of light emitting semiconductor devices radiates at least one radiative angle of light different from a radiative angle of light radiating from another of said plurality of light emitting semiconductor devices.
8. A light emitting semiconductor device according to claim 1 , wherein at least one of the plurality of light emitting semiconductor devices is arranged to have at least one axis of emission that is different from at least one axis of emission of another of said plurality of light emitting semiconductor devices.
9. A photographic illumination apparatus according to claim 7 , wherein at least one of the plurality of light emitting semiconductor devices is arranged to have at least one axis of emission that is different from at least one axis of emission of another of said plurality of light emitting semiconductor devices.
10. A photographic illumination apparatus according to claim 6 , wherein the plurality of light emitting semiconductor devices includes three light emitting semiconductor devices arranged in respectively adjacent fashion and radiate at least one radiative angle of light from one light emitting semiconductor device centrally located among the three light emitting semiconductor devices set to be smaller than the radiative angle or angles of light radiating from the other two light emitting semiconductor devices.
11. A photographic illumination apparatus according to claim 6 , wherein the plurality of light emitting semiconductor devices includes three light emitting semiconductor devices arranged in respectively adjacent fashion and radiate at least one radiative angle of light from one light emitting semiconductor device centrally located among the three light emitting semiconductor devices set to be larger than the radiative angle or angles of light radiating from the other two light emitting semiconductor devices.
12. A light emitting semiconductor device according to claim 3 ;
said device when activated illuminating a target in a photographic exposure event;
wherein at least a portion of the light emitting diode elements are controlled to emit light in temporally staggered fashion during a single said photographic exposure event.
13. A photographic illumination apparatus according to claim 6 , wherein at least a portion of the plurality of light emitting diode elements comprises a white light emitting diode element.
14. A photographic illumination apparatus according to claim 6 , wherein the plurality of light emitting diode elements includes one or more light emitting diode elements emitting, respectively, red, green, and blue light.
15. A photographic illumination apparatus according to claim 6 , wherein at least one of the reflectors forms at least one inner wall having a parabolic or spherical curvature.
16. A photographic illumination apparatus according to claim 6 , wherein at least one of the reflectors is made of two or more reflectors joinable to permit a height adjustment in the reflectors.
17. A photographic illumination apparatus according to claim 14 ,
said apparatus when activated illuminating a target in a photographic exposure event;
wherein at least a portion of the light emitting diode elements in the light emitting semiconductor device are controlled to emit light in temporally staggered fashion during a single photographic exposure event.
18. The light emitting semiconductor apparatus of claim 1 wherein at least one of said one or more reflectors includes a periphery shaped to receive a reflector extension for extending at least a portion of the at least one reflector.
19. The light emitting semiconductor apparatus of claim 1 including an annular reflector extension mounted on a periphery of at least one of the one or more reflectors for adjusting the height of the at least one of the one or more reflectors.
20. The light emitting semiconductor apparatus of claim 1 wherein each of said plurality of light emitting diodes has an optical axis and wherein the optical axis of a first one of said plurality of light emitting diodes is non-parallel to the optical axis of a second one of said plurality of light emitting diodes.
21. The light emitting semiconductor apparatus of claim 6 wherein at least one of said one or more reflectors includes a periphery shaped to receive a reflector extension for extending at least a portion of the at least one reflector.
22. The light emitting semiconductor apparatus of claim 6 including an annular reflector extension mounted on a periphery of at least one of the one or more reflectors for adjusting the height of the at least one of the one or more reflectors.
23. The light emitting semiconductor apparatus of claim 6 wherein each of said plurality of light emitting diodes has an optical axis and wherein the optical axis of a first one of said plurality of light emitting diodes is non-parallel to the optical axis of a second one of said plurality of light emitting diodes.