Method of manufacturing a light emitting semiconductor package
View Patent ↗A method of manufacturing a light emitting semiconductor package, the method comprising the steps of: obtaining a semiconductor wafer 252 which includes a plurality of light emitting devices 254 residing on or in a surface of the semiconductor wafer 252 ; forming at least one first hollow cap 256 , each first hollow cap 256 formed to provide: a central portion 260 and first perimeter walls extending from the perimeter edge of the central portion with the free edges of the first perimeter walls adapted to be bonded to the surface of the semiconductor wafer 252 to provide a first cavity; at least one region 258 of the central portion 260 which is substantially transparent or translucent to electromagnetic radiation; bonding the at least one first hollow cap 256 to the semiconductor wafer 252 , the central portion overlying at least one of the plurality of light emitting devices 254 ; and, separating the semiconductor wafer 252 with bonded caps 256 into light emitting semiconductor packages 250.
1. A method of manufacturing a light emitting semiconductor package, the method comprising the steps of:
(A) obtaining a semiconductor wafer which includes a plurality of light emitting devices residing on or in a surface of the semiconductor wafer;
(B) forming at least one first hollow cap, each first hollow cap formed to provide:
(1) a central portion and first perimeter walls extending from the perimeter edge of the central portion with the free edges of the first perimeter walls adapted to be bonded to the surface of the semiconductor wafer to provide a first cavity;
(2) at least one region of the central portion which is substantially transparent or translucent to electromagnetic radiation;
(C) bonding the at least one first hollow cap to the semiconductor wafer, the central portion overlying at least one of the plurality of light emitting devices; and,
(D) separating the semiconductor wafer with bonded caps into light emitting semiconductor packages.
2. The method as claimed in claim 1 , wherein the first hollow cap is formed by molding a sheet.
3. The method as claimed in claim 2 , wherein infrared radiation is used to heat the sheet to facilitate molding.
4. The method as claimed in claim 2 , wherein the sheet is a plastic sheet.
5. The method as claimed in claim 1 , wherein one or more elongate lenses are formed on the lower surface of the central portion of the first hollow cap.
6. The method as claimed in claim 5 , wherein the one or more elongate lenses are formed by a mold wafer disposed with one or more depressions in the surface of the mold wafer.
7. The method as claimed in claim 1 , wherein more than one second hollow cap is bonded to the semiconductor wafer on the surface opposite the bonded first hollow cap.
8. The method as claimed in claim 7 , wherein the wafer is separated by etching the wafer between the second hollow caps.
9. The method as claimed in claim 1 , wherein the at least one region refracts the electromagnetic radiation emitted by the at least one device.
10. The method as claimed in claim 1 , wherein the cap is further formed to include at least one attachment means for attaching an electromagnetic radiation transmitting cable or fiber to the cap, whereby at least some electromagnetic radiation emitted from the at least one device passes through said at least one region into the cable or fiber.
11. The method as claimed in claim 1 , wherein more than one region of the central portion is formed, each region of the central portion associated with at least one light emitting device.