IP Library Granted Patent US 7,326,654
Granted Patent B2
US 7,326,654 · App. 10/853,279 · Granted Feb 5, 2008

Monodisperse nanoparticles produced by size-selective photoetching reaction

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Quick Facts
Patent No.
US 7,326,654
App. No.
10/853,279
Granted
Feb 5, 2008
Kind
B2
Abstract

Monodisperse nanoparticles are prepared with a high degree of reproducibility by controlling pH in size-selective photoetching. The nanoparticles have uniform optical properties and other properties.

Claims (11)

1. A method for producing monodisperse semiconductor nanoparticles dispersed in liquid, comprising:

a step of providing semiconductor nanoparticles of a wide particle-size distribution dispersed in liquid; and

a step of subjecting said semiconductor nanoparticles of said wide particle-size distribution dispersed in liquid to a size-selective photoetching reaction while controlling a pH variation of said liquid dispersed with said semiconductor nanoparticles of said wide particle-size distribution to be less than 0.77 during the size-selective photoetching reaction.

2. The method according to claim 1 , wherein a buffer solution is added to said liquid dispersed with said semiconductor nanoparticles of said wide particle-size distribution so as to control said pH variation.

3. The method according to claim 2 , wherein the buffer solution is a mixture of a weak acid with a conjugate base thereof to suppress the pH variation of said liquid dispersed with said semiconductor nanoparticles of said wide particle-size distribution caused by at least the size-selective photoetching reaction.

4. The method according to claim 3 , wherein the weak acid is acetic acid.

5. The method according to claim 1 , wherein a pH-stat device is used to monitor a pH of said liquid dispersed with said semiconductor nanoparticles of said wide particle-size distribution so as to control said pH variation by adding acid or alkali into said liquid.

6. The method according to claim 1 , wherein the semiconductor nanoparticles are CdS nanoparticles, and wherein a pH value of the solution in photoetching is controlled within a range from 6 to 8.

7. The method according to claim 1 , wherein the pH variation of the solution which contains said semiconductor nanoparticles is controlled to be 0.06 during size-selective photoetching.

8. The method according to claim 1 , wherein the pH variation of the solution which contains said semiconductor nanoparticles is controlled to be 0.04 during size-selective photoetching.

9. The method according to claim 1 , wherein the size-selective photoetching reaction involves irradiating said semiconductor nanoparticles of said wide particle-size distribution dispersed in liquid with a monochromatic light thereby dissoluting excited semiconductor nanoparticles.

Assignments (4)
ABSORPTION-TYPE COMPANY SPLIT AND DEMERGER Recorded Aug 20, 2015
From: HITACHI SOLUTIONS, LTD.
To: HITACHI, LTD.
Reel/Frame 036400/0385 →
CHANGE OF NAME Recorded Dec 18, 2014
From: HITACHI SOFTWARE ENGINEERING CO., LTD.
To: HITACHI SOLUTIONS, LTD.
Reel/Frame 034550/0494 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 2, 2005
From: SATO, KEIICHI; KUWABATA, SUSUMU; TORIMOTO, TSUKASA
To: HITACHI SOFTWARE ENGINEERING CO., LTD.
Reel/Frame 016222/0612 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 26, 2004
From: SATO, KEIICHI; KUWABATA, SUSUMU; TORIMOTO, TSUKASA
To: HITACHI SOFTWARE ENGINEERING CO., LTD.
Reel/Frame 015385/0425 →