Method of substrate surface treatment for RRAM thin film deposition
View Patent ↗A method of fabricating a CMR thin film for use in a semiconductor device includes preparing a CMR precursor in the form of a metal acetate based acetic acid solution; preparing a wafer; placing a wafer in a spin-coating chamber; spin-coating and heating the wafer according to the following: injecting the CMR precursor into a spin-coating chamber and onto the surface of the wafer in the spin-coating chamber; accelerating the wafer to a spin speed of between about 1500 RPM to 3000 RPM for about 30 seconds; baking the wafer at a temperature of about 180° C. for about one minute; ramping the temperature to about 230° C.; baking the wafer for about one minute at the ramped temperature; annealing the wafer at about 500° C. for about five minutes; repeating said spin-coating and heating steps at least three times; post-annealing the wafer at between about 500° C. to 600° C. for between about one to six hours in dry, clean air; and completing the semiconductor device.
1. A method of fabricating a CMR thin film for use in a semiconductor device, comprising:
preparing a CMR precursor in the form of a metal acetate based acetic acid solution;
preparing a wafer;
placing a wafer in a spin-coating chamber;
spin-coating and heating the wafer according to the following:
injecting the CMR precursor into a spin-coating chamber and onto the surface of the wafer in the spin-coating chamber;
accelerating the wafer to a spin speed of between about 1500 RPM to 3000 RPM for about 30 seconds;
baking the wafer at a temperature of about 180° C. for about one minute;
ramping the temperature to about 230° C.;
baking the wafer for about one minute at the ramped temperature;
annealing the wafer at about 500° C. for about five minutes;
repeating said spin-coating and heating steps at least three times;
post-annealing the wafer at between about 500° C. to 600° C. for between about one to six hours in dry, clean air; and
completing the semiconductor device.
2. The method of claim 1 wherein said preparing a wafer includes forming a layer of rhodium having a surface treatment of Pt 0.2 Co 0.8 alloy thereon.
3. The method of claim 1 wherein said preparing includes forming a layer of Rh—Pt—Co alloy thereon.
4. The method of claim 1 wherein said preparing includes forming a layer of SiO 2 on a silicon wafer.
5. The method of claim 1 which includes programming the device by applying a writing pulse having an amplitude of at least 4.5V and a pulse width of at least 50 ns.
6. The method of claim 1 which includes programming the device by applying a reset pulse having a minimum pulse amplitude at least 2V and a pulse width of at least 2 μs.
7. A method of fabricating a CMR thin film for use in a semiconductor device, comprising:
preparing a CMR precursor in the form of a metal acetate based acetic acid solution;
preparing a wafer, including forming a layer of material on a silicon substrate, wherein the material is taken from the group of materials consisting of a layer of rhodium having a surface treatment of Pt 0.2 Co 0.8 alloy thereon and a layer of Rh—Pt—Co alloy thereon;
placing a wafer in a spin-coating chamber;
spin-coating and heating the wafer according to the following:
injecting the CMR precursor into a spin-coating chamber and onto the surface of the wafer in the spin-coating chamber;
accelerating the wafer to a spin speed of between about 1500 RPM to 3000 RPM for about 30 seconds;
baking the wafer at a temperature of about 180° C. for about one minute;
ramping the temperature to about 230° C.;
baking the wafer for about one minute at the ramped temperature;
annealing the wafer at about 500° C. for about five minutes;
repeating said spin-coating and heating steps at least three times;
post-annealing the wafer at between about 500° C. to 600° C. for between about one to six hours in dry, clean air; and
completing the semiconductor device.
8. The method of claim 7 wherein said preparing includes forming a layer of SiO 2 on a silicon wafer.
9. The method of claim 7 which includes programming the device by applying a writing pulse having an amplitude of at least 4.5V and a pulse width of at least 50 ns.
10. The method of claim 7 which includes programming the device by applying a reset pulse having a minimum pulse amplitude at least 2V and a pulse width of at least 2 μs.
11. A method of fabricating a CMR thin film for use in a semiconductor device, comprising:
preparing a CMR precursor in the form of a metal acetate based acetic acid solution;
preparing a wafer;
placing a wafer in a spin-coating chamber;
spin-coating and heating the wafer according to the following:
injecting the CMR precursor into a spin-coating chamber and onto the surface of the wafer in the spin-coating chamber;
accelerating the wafer to a spin speed of between about 1500 RPM to 3000 RPM for about 30 seconds;
baking the wafer at a temperature of about 180° C. for about one minute;
ramping the temperature to about 230° C.;
baking the wafer for about one minute at the ramped temperature;
annealing the wafer at about 500° C. for about five minutes;
repeating said spin-coating and heating steps at least three times;
post-annealing the wafer at between about 500° C. to 600° C. for between about one to six hours in dry, clean air;
completing the semiconductor device; and
programming the device by applying a writing pulse having an amplitude of at least 4.5V and a pulse width of at least 50 ns and by applying a reset pulse having a minimum pulse amplitude at least 2V and a pulse width of at least 2 μs.
12. The method of claim 11 wherein said preparing a wafer includes forming a layer of rhodium having a surface treatment of Pt 0.2 Co 0.8 alloy thereon.
13. The method of claim 11 wherein said preparing includes forming a layer of Rh—Pt—Co alloy thereon.
14. The method of claim 11 wherein said preparing includes forming a layer of SiO 2 on a silicon wafer.