IP Library Granted Patent US 7,026,663
Granted Patent B2
US 7,026,663 · App. 10/855,295 · Granted Apr 11, 2006

Selective filtering of wavelength-converted semiconductor light emitting devices

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Quick Facts
Patent No.
US 7,026,663
App. No.
10/855,295
Granted
Apr 11, 2006
Kind
B2
Abstract

A structure includes a semiconductor light emitting device including a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer emits first light of a first peak wavelength. A wavelength-converting material that absorbs the first light and emits second light of a second peak wavelength is disposed in the path of the first light. A filter material that transmits a portion of the first light and absorbs or reflects a portion of the first light is disposed over the wavelength-converting material.

Claims (18)

1. A structure comprising:

a semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region, the light emitting layer being configured to emit monochromatic first light having a first peak wavelength;

a wavelength-converting material capable of absorbing the first light and emitting second light having a second peak wavelength, the wavelength-converting material being disposed in a path of the first light; and

a filter material overlying the wavelength-converting material, wherein the filter material is configured to prevent a portion of the first light from being transmitted, and to transmit a portion of the first light.

2. The structure of claim 1 wherein the filter material is configured to absorb a portion of the first light and transmit a portion of the first light.

3. The structure of claim 2 wherein the filter material is configured to transmit the second light.

4. The structure of claim 2 wherein the filter material is dispersed in an encapsulant overlying the semiconductor light emitting device.

5. The structure of claim 2 further comprising a lens overlying the semiconductor light emitting device.

6. The structure of claim 5 further comprising a plurality of leads electrically connected to the semiconductor light emitting device.

7. The structure of claim 5 wherein the filter material is coated on a surface of the lens.

8. The structure of claim 5 wherein the filter material is incorporated into the lens.

9. The structure of claim 2 wherein the wavelength-converting material is a phosphor.

10. The structure of claim 2 wherein the filter material comprises an organic dye.

11. The structure of claim 2 wherein the filter material does not emit visible light.

12. The structure of claim 2 wherein:

the portion of transmitted first light and second light combine to form composite light; and

the filter material is configured such that the composite light corresponds to a predetermined spectrum.

13. The structure of claim 1 wherein the filter material is configured to reflect a portion of the first light and transmit a portion of the first light.