Silicon-based resonant cavity photodiode for image sensors
View Patent ↗An imager with pixels having a resonant-cavity photodiode. The resonant cavity photodiode increases absorption of light having long wavelengths. A trench is formed for the photodiode and reflective film is grown on the bottom of the trench. The reflective film reflects light that is not initially absorbed back to the active region of the photodiode.
1. An image sensor comprising:
a substrate;
a trench formed in the substrate; and
a photoconversion device in said trench, said photoconversion device having an active region for absorbing incident light and converting the light to charge and comprising at least one material from the group consisting of: hydrogenated polysilicon, deuteriated polysilicon, and fluorinated polysilicon;
a layer in said trench, the layer having an index of refraction such that at least a portion of the incident light striking said layer is reflected toward the active region of said photoconversion device.
2. An image sensor comprising:
a substrate;
a trench formed in the substrate; and
a photoconversion device formed at least partially within said trench, said photoconversion device having an active region for absorbing incident light and converting the light to charge and comprising deuteriated polysilicon, said trench having a layer below said active region with an index of refraction such that at least a portion of the incident light striking said layer is reflected toward the active region of said photoconversion device.
3. An image sensor comprising:
a substrate;
a trench formed in the substrate; and
a photoconversion device formed at least partially within said trench, said photoconversion device having an active region for absorbing incident light and converting the light to charge and comprising fluorinated polysilicon, said trench having a layer below said active region with an index of refraction such that at least a portion of the incident light striking said layer is reflected toward the active region of said photoconversion device.
4. An image sensor comprising:
a substrate;
a trench formed in the substrate; and
a photoconversion device formed at least partially within said trench, said photoconversion device having an active region for absorbing incident light and converting the light to charge and comprising hydrogenated polysilicon, said trench having a layer below said active region with an index of refraction such that at least a portion of the incident light striking said layer is reflected toward the active region of said photoconversion device.
5. The image sensor according to claim 1 , wherein said photoconversion device comprises polysilicon.
6. The image sensor according to claim 1 , wherein said photoconversion device comprises polysilicon doped with differing dopants to form a p-n junction.
7. The image sensor according to claim 1 , wherein said layer within said trench is formed of oxide.
8. The image sensor according to claim 1 , wherein said trench is formed to a depth in the range of about 0.5 μm to about 10 μm.
9. The image sensor according to claim 1 , wherein said trench has sidewalls.
10. The image sensor according to claim 9 , wherein said sidewalls comprise nitride.
11. The image sensor according to claim 9 , wherein said sidewalls comprise an oxide layer.
12. The image sensor according to claim 1 , further comprising an insulator layer beneath said substrate.
13. The image sensor according to claim 12 , wherein said insulator layer comprises an oxide.
14. The image sensor according to claim 12 , wherein said insulator layer comprises sapphire.