Thin film magnetic memory device including memory cells having a magnetic tunnel junction
View Patent ↗In the data read operation, a memory cell and a dummy memory cell are respectively coupled to two bit lines of a selected bit line pair, and a data read current is supplied thereto. In the selected memory cell column, a read gate drives the respective voltages on a read data bus pair, according to the respective voltages on the bit lines. A data read circuit amplifies the voltage difference between the read data buses so as to output read data. The use of the read gate enables the read data buses to be disconnected from a data read current path. As a result, respective voltage changes on the bit lines are rapidly produced, whereby the data read speed can be increased.
1. A thin film magnetic memory device, comprising:
a memory array including a plurality of magnetic memory cells arranged in rows and columns, each of said plurality of magnetic memory cells including a magnetic storage portion having a different resistance value according to a level of storage data written when a data write magnetic field applied by first and second data write currents is larger than a predetermined magnetic field;
a plurality of read word lines provided corresponding to the respective rows of the magnetic memory cells, and driven to a first voltage according to an address selection result in a data read operation;
a plurality of write word lines provided corresponding to the respective rows, and selectively activated according the address selection result so as to pass said first data write current therethrough in a data write operation; and
a plurality of bit lines provided corresponding to the respective columns of the magnetic memory cells so as to extend in such a direction that intersects said plurality of write word lines, and each coupled to the corresponding magnetic storage portions, wherein
one of said plurality of bit lines that is selected according to the address selection result passes therethrough a data read current and said second data write current in the data read operation and the data write operation, respectively, and
each of said magnetic memory cells further includes a rectifying access element connected between the corresponding magnetic storage portion and a corresponding one of said plurality of read word lines.
2. The thin film magnetic memory device according to claim 1 , wherein adjacent magnetic memory cells share one of said plurality of write word lines.
3. The thin film magnetic memory device according to claim 1 , wherein each said write word lines has a larger cross-sectional area than that of each said bit lines.
4. The thin film magnetic memory device according to claim 1 , wherein said plurality of write word lines are formed from a material having higher electromigration resistance than that of said plurality of bit lines.
5. A thin film magnetic memory device, comprising:
a memory array including a plurality of magnetic memory cells arranged in rows and columns, each of said plurality of magnetic memory cells including a magnetic storage portion having a different resistance value according to a level of storage data written when a data write magnetic field applied by first and second data write currents is larger than a predetermined magnetic field;
a plurality of word lines provided corresponding to the respective rows of the magnetic memory cells, and each shared between corresponding adjacent magnetic memory cells in the column direction, wherein one of said plurality of word lines that is selected according to an address selection result is activated so as to pass therethrough said first data write current and a data read current in a data write operation and a data read operation, respectively; and
a plurality of bit lines provided corresponding to the respective columns of the magnetic memory cells so as to extend in such a direction that crosses said plurality of write word lines, and each coupled to the corresponding magnetic storage portions, wherein one of said plurality of bit lines that is selected according to the address selection result passes therethrough said data read current and said second data write current in the data read operation and the data write operation, respectively, and
each of said magnetic memory cells further includes a rectifying access element connected between the corresponding magnetic storage portion and a corresponding one of said plurality of word lines.
6. The thin film magnetic memory device according to claim 5 , wherein each said word line has a larger cross-sectional area than that of each said bit line.
7. The thin film magnetic memory device according to claim 5 , wherein said plurality of word lines are formed from a material having higher electromigration resistance than that of said plurality of bit lines.