Active matrix organic electroluminescent device and fabrication method thereof
An active matrix organic electroluminescent device with a thermal insulation structure and fabrication method thereof. The active matrix organic electroluminescent device comprises a plurality of pixel areas arranged in a matrix form. Each pixel area comprises a TFT, an OLED and a thermal insulation structure formed between the OLED and the TFT. The thermal insulation structure insulates the OLED from the heat generated by the TFT under operation, resulting in high luminescent efficiency and extended lifetime of the device.
1. An active matrix organic electroluminescent device, comprising a plurality of pixel areas arranged in a matrix, each pixel area comprising:
a thin film transistor;
an organic light-emitting diode; and
a thermal insulation structure formed between the thin film transistor and the organic light-emitting diode.
2. The device as claimed in claim 1 , wherein the thin film transistor comprises a semiconductor layer, a gate electrode, a source electrode, and a drain electrode.
3. The device as claimed in claim 2 , wherein the organic light-emitting diode comprises a first electrode, an organic electroluminescent layer, and a second electrode, wherein the second electrode extends to connect with an adjacent second electrode of an adjacent organic light-emitting diode.
4. The device as claimed in claim 3 , wherein the thermal insulation structure is formed in the second electrode between the thin film transistor and the organic light-emitting diode.
5. The device as claimed in claim 3 , wherein the thermal insulation structure is formed in the second electrode and the organic electroluminescent layer between the thin film transistor and the organic light-emitting diode.
6. The device as claimed in claim 1 , wherein the thermal insulation structure comprises a thermal insulation trench and a thermal insulation material filled into the thermal insulation trench.
7. The device as claimed in claim 6 , wherein the thermal insulation material is nitrogen gas.
8. The device as claimed in claim 6 , wherein the thermal insulation trench has a width larger than 1 nm.
9. The device as claimed in claim 1 , wherein the thin film transistor comprises an amorphous-silicon thin film transistor, low temperature poly-silicon thin film transistor, or organic thin film transistor.
10. An active matrix organic electroluminescent device, comprising a plurality of pixel areas arranged in a matrix, each pixel area comprising:
a thin film transistor and an insulation layer formed on a substrate, wherein the thin film transistor comprises a semiconductor layer, a doped semiconductor layer, a gate electrode, a source electrode, and a drain electrode;
a first electrode formed on the insulation layer;
a protective layer formed on the thin film transistor and a part of the first electrode;
an organic electroluminescent layer and a second electrode sequentially formed over the entire surface of the substrate, substantially covering the first electrode and the protective layer, wherein the first electrode, and the organic electroluminescent layer and second electrode thereupon comprise an organic light-emitting diode; and
a thermal insulation structure formed between the semiconductor layer and the organic light-emitting diode.
11. The device as claimed in claim 10 , wherein the thermal insulation structure is formed in the second electrode and the organic electroluminescent layer between the thin film transistor and the organic light-emitting diode.
12. The device as claimed in claim 10 , further comprising a light-shielding layer formed on the protective layer to cover the semiconductor layer.
13. The device as claimed in claim 10 , wherein the thermal insulation structure comprises a thermal insulation trench and a thermal insulation material filled into the thermal insulation trench.
14. The device as claimed in claim 13 , wherein the thermal insulation material is nitrogen gas.
15. The device as claimed in claim 13 , wherein the thermal insulation trench has a width larger than 1 nm.
16. The device as claimed in claim 10 , wherein the thin film transistor comprises an amorphous-silicon thin film transistor, low temperature poly-silicon thin film transistor, or organic thin film transistor.
17. A method of fabricating an active matrix organic electroluminescent device, comprising:
providing a substrate;
forming a plurality of thin film transistors on the substrate, wherein the thin film transistor comprises a semiconductor layer, a doped semiconductor layer, a gate electrode, a source electrode, and a drain electrode;
forming an insulation layer on the substrate;
forming a first electrode on the insulation layer;
forming a protective layer on the thin film transistors and a part of the first electrode;
sequentially forming an organic electroluminescent layer and a second electrode over the entire surface of the substrate, substantially covering the first electrode and the protective layer, wherein the first electrode, and the organic electroluminescent layer and second electrode thereupon comprise an organic light-emitting diode; and
patterning the second electrode, between the semiconductor layer and the organic light-emitting diode to form a thermal insulation trench.
18. The method as claimed in claim 17 , further comprising, after forming the protective layer, forming a light-shielding layer on the protective layer to cover the semiconductor layer.
19. The method as claimed in claim 17 , wherein the thermal insulation trench is formed by etching the second electrode and the organic electroluminescent layer with the protective layer acting as an etch stopper.
20. The method as claimed in claim 17 , further comprising, after forming the thermal insulation trench, refilling a thermal insulation material into the thermal insulation trench.
21. The method as claimed in claim 17 , wherein the thermal insulation trench has a width larger than 1 nm.