Semiconductor integrated circuit device, method of manufacturing the device, and computer readable medium
View Patent ↗A semiconductor integrated circuit device which guarantees the characteristics of writing to and reading from the built-in memory even when the manufacturing process conditions are varied, a method of manufacturing the device, and a medium for storing a processing procedure for deciding the number of delay circuits built in the device used for designing. The semiconductor integrated circuit device is provided with a cache memory which includes a BIST circuit composed of a pattern generator, a pattern comparator, an output register, a register controlled by a register control a register write signal; a variable delay circuit controlled by the register; word lines, and a sense amplifier enable signal line. The timing for enabling the sense amplifier is changed and the memory is measured by a BIST circuit at the timing, thereby deciding the optimal timing.
1. A processor comprising:
a plurality of bit lines and a plurality of word lines;
a plurality of memory cells coupled to said bit lines and word lines;
an amplifier circuit coupled to said bit lines;
a switch circuit coupled to a first potential and a node of the amplifier circuit to supply a second potential; and
a plurality of delay circuits to output a control signal for controlling said switch circuit,
wherein the minimum number of said delay circuits used for operation is decided after said processor is manufactured.
2. The processor according to claim 1 , further comprising a CPU having a BIST circuit.
3. The processor according to claim 2 ,
wherein the minimum number of said delay circuits used for operation is decided by said CPU, and
wherein said CPU is capable of:
changing the number of said delay circuits, writing a predetermined value in each memory cell, reading the value written in each memory cell, comparing said read value with said written value, and
deciding the minimum number of delay circuits from a result of test operation.
4. The processor according to claim 3 , wherein the test operation is operated on every memory cell.
5. The processor according to claim 4 , wherein said memory comprises SRAM memory.
6. The processor according to claim 5 , further comprising a decoder circuit to which addresses are input,
wherein clock signals are input to said delay circuits and said decoder circuit.
7. The processor according to claim 4 , further comprising a decoder circuit to which addresses are input,
wherein clock signals are input to said delay circuits and said decoder circuit.
8. The processor according to claim 4 ,
wherein said BIST circuit has a pattern generator, a pattern comparator, and a register.
9. The processor according to claim 3 , wherein said memory comprises SRAM memory.
10. The processor according to claim 9 , further comprising a decoder circuit to which addresses are input,
wherein clock signals are input to said delay circuits and said decoder circuit.
11. The processor according to claim 3 , further comprising a decoder circuit to which addresses are input,
wherein clock signals are input to said delay circuits and said decoder circuit.
12. The processor according to claim 3 ,
wherein said BIST circuit has a pattern generator, a pattern comparator, and a register.
13. The processor according to claim 2 , wherein said memory comprises SRAM memory.
14. The processor according to claim 13 , further comprising a decoder circuit to which addresses are input,
wherein clock signals are input to said delay circuits and said decoder circuit.
15. The processor according to claim 13 ,
wherein said BIST circuit has a pattern generator, a pattern comparator, and a register.
16. The processor according to claim 2 , further comprising a decoder circuit to which addresses are input,
wherein clock signals are input to said delay circuits and said decoder circuit.
17. The processor according to claim 2 ,
wherein said BIST circuit has a pattern generator, a pattern comparator, and a register.
18. The processor according to claim 1 , wherein said memory comprises SRAM memory.
19. The processor according to claim 18 , further comprising a decoder circuit to which addresses are input,
wherein clock signals are input to said delay circuits and said decoder circuit.
20. The processor according to claim 1 , further comprising a decoder circuit to which addresses are input,
wherein clock signals are input to said delay circuits and said decoder circuit.