Liquid crystal display device having multi-domain structure including a distorting pattern under the pixel electrode and method of fabricating the same

1. An array substrate for a liquid crystal display (LCD) device, comprising:

a gate line and a data line on a substrate, the gate line crossing the data line to define a pixel region;

a thin film transistor connected to the gate line and the data line;

a pixel electrode connected to the thin film transistor, wherein the pixel electrode has a slit at a central portion;

a distortion pattern under the pixel electrode;

an auxiliary electrode corresponding to the slit of the pixel electrode, wherein the auxiliary electrode is formed under the pixel electrode; and

a passivation layer between the pixel electrode and the auxiliary electrode, wherein the passivation layer has a slit hole corresponding to the slit of the pixel electrode.

2. The array substrate according to claim 1 , wherein the pixel electrode has a convex portion corresponding to the distortion pattern.

3. The array substrate according to claim 1 , wherein the pixel electrode has a boundary portion surrounding the central portion, and the distortion pattern is disposed at the boundary portion.

4. The array substrate according to claim 1 , wherein the slit has a rectangular shape disposed along a diagonal direction of the pixel region.

5. The array substrate according to claim 1 , wherein the pixel electrode has a concave portion corresponding to the slit hole.

6. The array substrate according to claim 1 , wherein the pixel electrode has a boundary portion surrounding the central portion and the distortion pattern is disposed at the central portion.

7. The array substrate according to claim 6 , further comprising an auxiliary electrode at the boundary portion, wherein the auxiliary electrode is formed under the pixel electrode.

8. The array substrate according to claim 7 , wherein the passivation layer has a hole corresponding to the auxiliary electrode.

9. The array substrate according to claim 8 , wherein the pixel electrode has a concave portion corresponding to the hole.

10. The array substrate according to claim 1 , wherein the distortion pattern includes a first buffer pattern and a second buffer pattern over the first buffer pattern.

11. The array substrate according to claim 10 , wherein the first buffer pattern includes the same material as the gate line, and the second buffer layer includes the same material as the data line.

12. The array substrate according to claim 10 , wherein the thin film transistor includes a gate electrode, a semiconductor layer, a source electrode, and a drain electrode.

13. The array substrate according to claim 12 , wherein the second buffer pattern includes a first layer of the same material as the semiconductor layer, and a second layer of the same material as the source and drain electrodes.

14. The substrate according to claim 1 , wherein the distortion pattern includes a first buffer pattern, a second buffer pattern, and a third buffer pattern.

15. The substrate according to claim 14 , wherein the first buffer pattern includes the same material as the gate line, the second buffer pattern includes the same material as the data line, and the third buffer pattern includes a semiconductor material.

16. An LCD device, comprising:

first and second substrates spaced apart and facing from each other;

a gate line and a data line on the first substrate, the gate line crossing the data line to define a pixel region;

a thin film transistor connected to the gate line and the data line;

a pixel electrode connected to the thin film transistor, wherein the pixel electrode has a central portion and a boundary portion surrounding the central portion, and wherein the pixel electrode has a slit at the central portion;

a distortion pattern under the pixel electrode, wherein the distortion portion is disposed under the boundary portion;

an auxiliary electrode corresponding to the slit, wherein the auxiliary electrode is formed under the pixel electrode;

a passivation layer between the pixel electrode and the auxiliary electrode, wherein the passivation layer has a slit hole corresponding to the slit of the pixel electrode;

a black matrix on the second substrate;

a color filter layer on the black matrix;

a common electrode on the color filter layer; and

a liquid crystal layer between the pixel electrode and the common electrode.

17. A method of fabricating an LCD device, comprising:

forming a gate line and a data line on a first substrate, the gate line crossing the data line to define a pixel region;

forming a thin film transistor connected to the gate line and the data line;

forming a pixel electrode connected to the thin film transistor, wherein the pixel electrode has a slit at a central portion;

forming an auxiliary electrode corresponding to the slit of the pixel electrode, wherein the auxiliary electrode is formed under the pixel electrode;

forming a distortion pattern under the pixel electrode;

forming a passivation layer between the pixel electrode and the auxiliary electrode, wherein the passivation layer has a slit hole corresponding to the slit of the pixel electrode;

forming a black matrix on a second substrate;

forming a color filter layer on the black matrix;

forming a common electrode on the color filter layer;

attaching the first and second substrates such that the pixel electrode and the common electrode face to each other; and

forming a liquid crystal layer between the pixel electrode and the common electrode.

18. The method according to claim 17 , wherein the pixel electrode has a boundary portion surrounding the central portion, and the distortion pattern is disposed at the boundary portion.

19. The method according to claim 17 , wherein the pixel electrode has a concave portion corresponding to the slit hole.

20. The method according to claim 17 , wherein the pixel electrode has a boundary portion surrounding the central portion, and the distortion pattern is disposed at the central portion.

21. The method according to claim 20 , further comprising forming an auxiliary electrode at the boundary portion under the pixel electrode.

22. The method according to claim 21 , further comprising forming a passivation layer between the pixel electrode and the auxiliary electrode, wherein the passivation layer has a hole corresponding to the auxiliary electrode.

23. The method according to claim 22 , wherein the pixel electrode has a concave portion corresponding to the hole.

24. The method according to claim 17 , wherein forming the distortion pattern comprises:

forming a first buffer pattern; and

forming a second buffer pattern over the first buffer pattern.

25. The method according to claim 24 , wherein the first buffer pattern is simultaneously formed with the gate line, and the second buffer layer is simultaneously formed with the data line.

26. The method according to claim 24 , wherein the thin film transistor includes a gate electrode, a semiconductor layer, a source electrode, and a drain electrode.

27. The method according to claim 26 , wherein forming the second buffer pattern comprises:

forming a first layer simultaneously with the semiconductor layer; and

forming a second layer simultaneously with the source and drain electrodes.

28. A method of fabricating an array substrate for an LCD device, comprising:

forming a gate line including a gate electrode, an auxiliary electrode, and a first buffer pattern on a substrate;

forming a data line including a source electrode, a drain electrode spaced apart from the source electrode, and a second buffer pattern corresponding to the first buffer pattern, the data line crossing the gate line to define a pixel region;

forming a passivation layer on the data line, the source electrode, the drain electrode and the second buffer pattern, the passivation layer having a drain contact hole exposing the drain electrode; and

forming a pixel electrode on the passivation layer, the pixel electrode being connected to the drain electrode through the drain contact hole.