Semiconductor sensor with a field-effect transistor
View Patent ↗The semiconductor sensor has at least one field-effect transistor ( 31; 31, 32 ) which is coupled to a sensitive electrode and which has measuring phases that are interruptible by idle phases through a control device ( 50 ). During the idle phases, the field-effect transistor or transistors ( 30; 31, 32 ) together with their terminals is or are connected to the same potential, preferably the ground potential.
1. A semiconductor sensor, comprising:
a field-effect transistor having a gate, a drain and a source, where the gate is coupled to a sensitive gate; and
a control device that in an idle mode couples the drain and source to a common reference potential, and in a measuring mode couples the drain to a drain terminal and couples the source to a source terminal and in the measuring mode the source and drain terminals are at different potentials.
2. The semiconductor sensor of claim 1 , where in the idle mode the drain terminal is coupled to the common reference potential through a first coupling field effect transistor and the source terminal is connected to the common reference potential through a second coupling field effect transistor.
3. The semiconductor sensor of claim 2 , where the common reference potential is ground potential and the sensitive gate is configured as a suspended sensitive gate.
4. The semiconductor sensor of claim 3 , where the field effect transistor comprises a p-channel field-effect transistor.
5. The semiconductor sensor of claim 3 , further comprising:
a guard ring that is connected to the gate of the field-effect transistor via a resistive element.
6. The semiconductor sensor of claim 5 , where the guard ring is connected to the common reference potential.
7. The semiconductor sensor of claim 3 , further comprising:
a guard ring that is connected to the gate of the field-effect transistor via a resistive element and to the suspended sensitive gate.
8. The semiconductor sensor of claim 1 , where the drain and the source of the field-effect transistor are switchable to the common reference potential by a plurality of switching transistors in response to the application of a control voltage to the plurality of switching transistors.
9. The semiconductor sensor of claim 8 , where the drain and source of the field-effect transistor can be decoupled from terminals by decoupling transistors.
10. A semiconductor sensor, comprising:
a field-effect transistor having a gate, a drain and a source, where the gate is coupled to a sensitive gate; and
control means, in an idle mode for coupling the drain and source to a common reference potential, and in a measuring mode for coupling the drain to a drain terminal and couples the source to a source terminal and in the measuring mode the source and drain terminals are at different potentials.
11. The semiconductor sensor of claim 10 , where in the idle mode the drain terminal is coupled to the common reference potential through a first switching element and the source terminal is connected to the common reference potential through a second switching element.
12. The semiconductor sensor of claim 11 , where the first switching element comprises a first coupling field effect transistor and the second switching element comprises a second coupling field effect transistor.
13. The semiconductor sensor of claim 12 , where the common reference potential is ground potential and the sensitive gate is configured as a suspended sensitive gate, and a guard ring is connected to the gate of the field-effect transistor and the suspended sensitive gate via a resistive element.