Method for manufacturing semiconductor device
View Patent ↗In a method for manufacturing a semiconductor device, an insulating film having pores is formed on a substrate, and an opening is formed in the insulating film. Thereafter, a material gas supplying Si or C is supplied to the insulating film. Thereby, deficient elements, such as Si or C, are supplied to the insulating film. Thereafter, the opening, including a barrier metal, is filled with a conductive member to form a wiring structure.
1. A method for manufacturing a semiconductor device comprising, sequentially:
forming on a substrate an insulating film having pores;
forming an opening in said insulating film;
before filling said opening, supplying a material gas to said insulating film in said opening, said material gas supplying Si to said insulating film in said opening; and
filling said opening with a conductive member.
2. The method for manufacturing a semiconductor device according to claim 1 further comprising forming a barrier metal at least on an inner wall of said opening after supplying said material gas and before filling said opening with said conductive member.
3. The method for manufacturing a semiconductor device according to claim 1 further comprising treating said insulating film with a plasma before or at the same time as supplying said material gas to said insulating film in said opening.
4. The method for manufacturing a semiconductor device according to claim 3 , including treating said insulating film with the plasma in an ambient at a pressure of about 100 to 500 Pa.
5. The method for manufacturing a semiconductor device according to claim 3 , including treating said insulating film with the plasma at an Ar flow rate of about 10 to 500 sccm.
6. The method for manufacturing a semiconductor device according to claim 1 , wherein said conductive member is one of Cu and a Cu alloy.
7. The method for manufacturing a semiconductor device according to claim 1 , wherein said insulating film contains Si, C, and O.
8. The method for manufacturing a semiconductor device according to claim 7 , wherein said insulating film contains about 30% Si, about 50% O, and about 15% C.
9. The method for manufacturing a semiconductor device according to claim 7 , wherein said insulating film further contains H.
10. The method for manufacturing a semiconductor device according to claim 9 , wherein said insulating film contains about 30% Si, about 50% O, and about 15% C.
11. The method for manufacturing a semiconductor device according to claim 1 , wherein said pores occupy at least about 30% of said insulating film.
12. The method for manufacturing a semiconductor device according to claim 1 , wherein said insulating film has a dielectric constant not exceeding about 2.5.
13. The method for manufacturing a semiconductor device according to claim 1 , wherein said material gas is selected from the group consisting of Si—R (R is H), SiH n , and SiH 4 .
14. A method for manufacturing a semiconductor device comprising, sequentially:
forming on a substrate an insulating film having pores;
forming an opening in said insulating film;
before filling said opening, supplying a material gas to said insulating film in said opening, said material gas supplying at least one of Si and C to said insulating film in said opening, without treating said insulating film with a plasma before or at the same time as supplying said material gas to said insulating film in said opening; and
filling said opening with a conductive member.
15. The method for manufacturing a semiconductor device according to claim 14 further comprising forming a barrier metal at least on an inner wall of said opening after supplying said material gas and before filling said opening with said conductive member.
16. The method for manufacturing a semiconductor device according to claim 14 , wherein said insulating film contains Si, C, and O.
17. The method for manufacturing a semiconductor device according to claim 16 , wherein said insulating film contains about 30% Si, about 50% O, and about 15% C.
18. The method for manufacturing a semiconductor device according to claim 16 , wherein said insulating film further contains H.
19. The method for manufacturing a semiconductor device according to claim 14 , wherein said pores occupy at least about 30% of said insulating film.
20. The method for manufacturing a semiconductor device according to claim 14 , wherein said material gas is selected from the group consisting of C n H m , CH 4 , Si—R (R is H or a molecular group composed of C n H m ), SiH n , SiH 4 , C n H m OH, CH 3 OH, C n H m COOH, and HCOOH.